JP2006516820A - 細型フィン構造のフィンｆｅｔの形成方法 - Google Patents

細型フィン構造のフィンｆｅｔの形成方法 Download PDF

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Publication number
JP2006516820A
JP2006516820A JP2006502826A JP2006502826A JP2006516820A JP 2006516820 A JP2006516820 A JP 2006516820A JP 2006502826 A JP2006502826 A JP 2006502826A JP 2006502826 A JP2006502826 A JP 2006502826A JP 2006516820 A JP2006516820 A JP 2006516820A
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Prior art keywords
layer
fin
fin structure
gate
region
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Pending
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JP2006502826A
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Japanese (ja)
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JP2006516820A5 (enExample
Inventor
クリボカピク ゾラン
ザイリン アン ジュディー
ダクシナ−マーシー スリカンテスワラ
ワン ハイホン
ユ ビン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2006516820A publication Critical patent/JP2006516820A/ja
Publication of JP2006516820A5 publication Critical patent/JP2006516820A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006502826A 2003-01-23 2004-01-15 細型フィン構造のフィンｆｅｔの形成方法 Pending JP2006516820A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/348,910 US6762483B1 (en) 2003-01-23 2003-01-23 Narrow fin FinFET
PCT/US2004/000963 WO2004068589A1 (en) 2003-01-23 2004-01-15 Narrow fin finfet

Publications (2)

Publication Number Publication Date
JP2006516820A true JP2006516820A (ja) 2006-07-06
JP2006516820A5 JP2006516820A5 (enExample) 2007-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502826A Pending JP2006516820A (ja) 2003-01-23 2004-01-15 細型フィン構造のフィンｆｅｔの形成方法

Country Status (7)

Country Link
US (2) US6762483B1 (enExample)
EP (1) EP1588422A1 (enExample)
JP (1) JP2006516820A (enExample)
KR (1) KR101035421B1 (enExample)
CN (1) CN1759488B (enExample)
TW (1) TW200418180A (enExample)
WO (1) WO2004068589A1 (enExample)

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US8617976B2 (en) 2009-06-01 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain re-growth for manufacturing III-V based transistors
US8816391B2 (en) 2009-04-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain engineering of devices with high-mobility channels
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor

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US20040197975A1 (en) 2004-10-07
CN1759488A (zh) 2006-04-12
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