JP2006516176A - 水平拡散ｍｏｓトランジスタ（ｌｄｍｏｓ）及びその製造方法 - Google Patents

水平拡散ｍｏｓトランジスタ（ｌｄｍｏｓ）及びその製造方法 Download PDF

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JP2006516176A
JP2006516176A JP2004555528A JP2004555528A JP2006516176A JP 2006516176 A JP2006516176 A JP 2006516176A JP 2004555528 A JP2004555528 A JP 2004555528A JP 2004555528 A JP2004555528 A JP 2004555528A JP 2006516176 A JP2006516176 A JP 2006516176A
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forming
insulating film
interlayer insulating
oxide
contact
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JP2006516176A5 (enExample
Inventor
ジョハーン ダーマワン
ジョン メイソン
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クリー マイクロウエイブ リミテッド ライアビリティ カンパニー
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Publication of JP2006516176A publication Critical patent/JP2006516176A/ja
Publication of JP2006516176A5 publication Critical patent/JP2006516176A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004555528A 2002-11-21 2003-11-19 水平拡散ｍｏｓトランジスタ（ｌｄｍｏｓ）及びその製造方法 Pending JP2006516176A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/302,639 US6727127B1 (en) 2002-11-21 2002-11-21 Laterally diffused MOS transistor (LDMOS) and method of making same
PCT/US2003/037210 WO2004049399A2 (en) 2002-11-21 2003-11-19 Laterally difussed mos transistor (ldmos) and method of making same

Publications (2)

Publication Number Publication Date
JP2006516176A true JP2006516176A (ja) 2006-06-22
JP2006516176A5 JP2006516176A5 (enExample) 2007-01-25

Family

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Family Applications (1)

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JP2004555528A Pending JP2006516176A (ja) 2002-11-21 2003-11-19 水平拡散ｍｏｓトランジスタ（ｌｄｍｏｓ）及びその製造方法

Country Status (5)

Country Link
US (1) US6727127B1 (enExample)
JP (1) JP2006516176A (enExample)
AU (1) AU2003299562A1 (enExample)
TW (1) TWI325154B (enExample)
WO (1) WO2004049399A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981028B2 (ja) * 2002-09-11 2007-09-26 株式会社東芝 半導体装置
JP2006245391A (ja) * 2005-03-04 2006-09-14 Toshiba Corp 半導体装置
SG130099A1 (en) * 2005-08-12 2007-03-20 Ciclon Semiconductor Device Co Power ldmos transistor
JP4907920B2 (ja) * 2005-08-18 2012-04-04 株式会社東芝 半導体装置及びその製造方法
US7554154B2 (en) * 2006-07-28 2009-06-30 Alpha Omega Semiconductor, Ltd. Bottom source LDMOSFET structure and method
US8076734B2 (en) * 2007-11-29 2011-12-13 International Business Machines Corporation Semiconductor structure including self-aligned deposited gate dielectric
KR101578931B1 (ko) * 2008-12-05 2015-12-21 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
CN103794593A (zh) * 2012-10-30 2014-05-14 上海华虹宏力半导体制造有限公司 功率mos晶体管阵列
US8981475B2 (en) 2013-06-18 2015-03-17 International Business Machines Corporation Lateral diffusion metal oxide semiconductor (LDMOS)
RU2535283C1 (ru) * 2013-06-26 2014-12-10 Открытое акционерное общество "Научно-производственное предприятие "Пульсар" Способ изготовления мощных кремниевых свч ldmos транзисторов
US20150035067A1 (en) * 2013-08-05 2015-02-05 Globalfoundries Singapore Pte. Ltd. Low rdson device and method of manufacturing the same
CN103871898B (zh) * 2014-02-21 2016-08-17 上海华力微电子有限公司 一种高压晶体管制备工艺
US9543299B1 (en) * 2015-09-22 2017-01-10 Texas Instruments Incorporated P-N bimodal conduction resurf LDMOS
RU2639579C2 (ru) * 2016-03-31 2017-12-21 Акционерное общество "Научно-производственное предприятие "Пульсар" Способ изготовления мощных кремниевых свч ldmos транзисторов с модернизированным затворным узлом элементарных ячеек
US11430888B2 (en) 2020-07-02 2022-08-30 Micron Technology, Inc. Integrated assemblies having transistors configured for high-voltage applications
US11664443B2 (en) * 2021-05-10 2023-05-30 Nxp Usa, Inc. LDMOS transistor with implant alignment spacers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766393A (ja) * 1993-08-23 1995-03-10 Nec Kansai Ltd 半導体装置の製造方法
JPH08186256A (ja) * 1994-12-29 1996-07-16 Sony Corp Ｌｄｄ構造のトランジスタの製造方法及びトランジスタ
JPH09232253A (ja) * 1996-02-20 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH10116986A (ja) * 1996-08-22 1998-05-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2000014791A1 (en) * 1998-09-02 2000-03-16 Ultrarf, Inc. Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
JP2000216382A (ja) * 1999-01-22 2000-08-04 Nec Corp 半導体装置の製造方法
JP2001237415A (ja) * 2000-02-21 2001-08-31 Nec Corp 半導体装置の製造方法
JP2001284283A (ja) * 2000-03-30 2001-10-12 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722910A (en) * 1986-05-27 1988-02-02 Analog Devices, Inc. Partially self-aligned metal contact process
US5869875A (en) 1997-06-10 1999-02-09 Spectrian Lateral diffused MOS transistor with trench source contact
US6215152B1 (en) * 1998-08-05 2001-04-10 Cree, Inc. MOSFET having self-aligned gate and buried shield and method of making same
US6063704A (en) * 1999-08-02 2000-05-16 National Semiconductor Corporation Process for incorporating silicon oxynitride DARC layer into formation of silicide polysilicon contact

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766393A (ja) * 1993-08-23 1995-03-10 Nec Kansai Ltd 半導体装置の製造方法
JPH08186256A (ja) * 1994-12-29 1996-07-16 Sony Corp Ｌｄｄ構造のトランジスタの製造方法及びトランジスタ
JPH09232253A (ja) * 1996-02-20 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH10116986A (ja) * 1996-08-22 1998-05-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2000014791A1 (en) * 1998-09-02 2000-03-16 Ultrarf, Inc. Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
JP2000216382A (ja) * 1999-01-22 2000-08-04 Nec Corp 半導体装置の製造方法
JP2001237415A (ja) * 2000-02-21 2001-08-31 Nec Corp 半導体装置の製造方法
JP2001284283A (ja) * 2000-03-30 2001-10-12 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置

Also Published As

Publication number Publication date
TWI325154B (en) 2010-05-21
WO2004049399A2 (en) 2004-06-10
AU2003299562A1 (en) 2004-06-18
AU2003299562A8 (en) 2004-06-18
TW200415713A (en) 2004-08-16
WO2004049399A3 (en) 2006-04-27
US6727127B1 (en) 2004-04-27

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