JP2006514706A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006514706A5 JP2006514706A5 JP2004564827A JP2004564827A JP2006514706A5 JP 2006514706 A5 JP2006514706 A5 JP 2006514706A5 JP 2004564827 A JP2004564827 A JP 2004564827A JP 2004564827 A JP2004564827 A JP 2004564827A JP 2006514706 A5 JP2006514706 A5 JP 2006514706A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- composition
- linked
- perfluoroalkanesulfonyl
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 48
- 239000002253 acid Substances 0.000 claims description 38
- 125000004432 carbon atom Chemical group C* 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 17
- 125000002015 acyclic group Chemical group 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- 125000004122 cyclic group Chemical group 0.000 claims description 16
- 125000005842 heteroatom Chemical group 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 16
- 229910052717 sulfur Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000007983 Tris buffer Substances 0.000 claims description 11
- 150000003949 imides Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000004090 dissolution Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000654 additive Substances 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- 150000007513 acids Chemical class 0.000 description 6
- 239000002738 chelating agent Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/319,954 US6884338B2 (en) | 2002-12-16 | 2002-12-16 | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
| PCT/US2003/034259 WO2004061028A1 (en) | 2002-12-16 | 2003-10-28 | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006514706A JP2006514706A (ja) | 2006-05-11 |
| JP2006514706A5 true JP2006514706A5 (enExample) | 2006-11-30 |
| JP4181129B2 JP4181129B2 (ja) | 2008-11-12 |
Family
ID=32506753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004564827A Expired - Fee Related JP4181129B2 (ja) | 2002-12-16 | 2003-10-28 | 銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6884338B2 (enExample) |
| EP (1) | EP1572821A1 (enExample) |
| JP (1) | JP4181129B2 (enExample) |
| KR (1) | KR20050085661A (enExample) |
| CN (1) | CN100448941C (enExample) |
| AU (1) | AU2003286734A1 (enExample) |
| WO (1) | WO2004061028A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
| US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
| US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
| US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| US7078308B2 (en) * | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
| US7129160B2 (en) | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
| US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
| TWI250202B (en) * | 2003-05-13 | 2006-03-01 | Eternal Chemical Co Ltd | Process and slurry for chemical mechanical polishing |
| US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
| US7153777B2 (en) | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
| US7566391B2 (en) | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
| JP2007088370A (ja) * | 2005-09-26 | 2007-04-05 | Fujifilm Corp | 水系研磨液及び化学機械的研磨方法 |
| US8512593B2 (en) * | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
| JP4897604B2 (ja) * | 2007-07-27 | 2012-03-14 | 株式会社Ｄｎｐファインケミカル | フォトマスク製造用のエッチング液 |
| JP4940102B2 (ja) * | 2007-10-25 | 2012-05-30 | 株式会社 マイクロプロセス | エッチング剤組成物及びそれを用いた半導体装置の製造方法 |
| JP2011198901A (ja) * | 2010-03-18 | 2011-10-06 | Dnp Fine Chemicals Co Ltd | 導電膜用エッチング液および導電膜のエッチング方法 |
| CN101972755B (zh) * | 2010-07-21 | 2012-02-01 | 河北工业大学 | Ulsi铜材料抛光后表面清洗方法 |
| CN103160909B (zh) * | 2011-12-15 | 2016-04-27 | 比亚迪股份有限公司 | 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法 |
| KR101842033B1 (ko) * | 2014-01-06 | 2018-03-26 | 한화테크윈 주식회사 | 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법 |
| US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
| KR20240011661A (ko) * | 2021-05-20 | 2024-01-26 | 스텔라 케미파 코포레이션 | 미세 가공 처리제 및 미세 가공 처리 방법 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0419845A3 (en) | 1989-09-05 | 1991-11-13 | General Electric Company | Method for preparing metallized polyimide composites |
| DE4333385C2 (de) | 1993-09-30 | 1997-01-30 | Friedrich A Spruegel | Flächendesinfektions- und Reinigungsmittel |
| US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5652072A (en) | 1995-09-21 | 1997-07-29 | Minnesota Mining And Manufacturing Company | Battery containing bis(perfluoroalkylsulfonyl)imide and cyclic perfluoroalkylene disulfonylimide salts |
| US6194317B1 (en) | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US6130161A (en) | 1997-05-30 | 2000-10-10 | International Business Machines Corporation | Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity |
| JPH1192754A (ja) | 1997-09-24 | 1999-04-06 | Cci Corp | ガラス用撥水処理剤 |
| WO1999030381A1 (en) | 1997-12-10 | 1999-06-17 | Minnesota Mining And Manufacturing Company | Bis(perfluoroalkylsulfonyl)imide surfactant salts in electrochemical systems |
| TW593731B (en) | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
| US6197696B1 (en) | 1998-03-26 | 2001-03-06 | Matsushita Electric Industrial Co., Ltd. | Method for forming interconnection structure |
| US6287977B1 (en) | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
| US6284656B1 (en) | 1998-08-04 | 2001-09-04 | Micron Technology, Inc. | Copper metallurgy in integrated circuits |
| US6245663B1 (en) | 1998-09-30 | 2001-06-12 | Conexant Systems, Inc. | IC interconnect structures and methods for making same |
| US6291887B1 (en) | 1999-01-04 | 2001-09-18 | Advanced Micro Devices, Inc. | Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer |
| IL128920A0 (en) | 1999-03-10 | 2000-02-17 | Nova Measuring Instr Ltd | Method for monitoring metal cmp |
| US6290578B1 (en) | 1999-10-13 | 2001-09-18 | Speedfam-Ipec Corporation | Method for chemical mechanical polishing using synergistic geometric patterns |
| US6369242B2 (en) | 2000-03-17 | 2002-04-09 | Roche Vitamins Inc. | Tocopherol manufacture by tris(perfluorohydrocarbylsulphonyl) methane or metal methides thereof |
| US6358899B1 (en) | 2000-03-23 | 2002-03-19 | Ashland, Inc. | Cleaning compositions and use thereof containing ammonium hydroxide and fluorosurfactant |
| US6310018B1 (en) | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
| US6372700B1 (en) | 2000-03-31 | 2002-04-16 | 3M Innovative Properties Company | Fluorinated solvent compositions containing ozone |
| TW486801B (en) | 2000-04-07 | 2002-05-11 | Taiwan Semiconductor Mfg | Method of fabricating dual damascene structure |
| US6291082B1 (en) | 2000-06-13 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of electroless ag layer formation for cu interconnects |
| TWI238459B (en) | 2000-11-15 | 2005-08-21 | Intel Corp | Copper alloy interconnections for integrated circuits and methods of making same |
| US6555510B2 (en) | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
-
2002
- 2002-12-16 US US10/319,954 patent/US6884338B2/en not_active Expired - Fee Related
-
2003
- 2003-10-28 JP JP2004564827A patent/JP4181129B2/ja not_active Expired - Fee Related
- 2003-10-28 CN CNB2003801059248A patent/CN100448941C/zh not_active Expired - Fee Related
- 2003-10-28 AU AU2003286734A patent/AU2003286734A1/en not_active Abandoned
- 2003-10-28 KR KR1020057010917A patent/KR20050085661A/ko not_active Ceased
- 2003-10-28 EP EP03777947A patent/EP1572821A1/en not_active Withdrawn
- 2003-10-28 WO PCT/US2003/034259 patent/WO2004061028A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006514706A5 (enExample) | ||
| JP2006510807A5 (enExample) | ||
| EP1743014B1 (en) | Fluorinated sulfonamide surfactants for aqueous cleaning solutions | |
| KR102315310B1 (ko) | 질화티탄 하드 마스크의 선택적 제거 및 에치 잔류물 제거 | |
| CN100437922C (zh) | 洗涤液及使用该洗涤液的洗涤方法 | |
| JP4181129B2 (ja) | 銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物 | |
| CN1236845C (zh) | 作为极端环境用表面活性剂/添加剂的二(全氟烷基磺酰基)酰亚胺及其盐,以及使用方法 | |
| CN105295924B (zh) | 氮化钛硬掩膜和蚀刻残留物的去除 | |
| KR19990063753A (ko) | 화학 기계적 연마용 조성물 및 화학 기계적 연마 방법 | |
| JP5845501B2 (ja) | 透明導電性薄膜積層体のエッチング液 | |
| JPS61266581A (ja) | Ｎｈ４ｆ／ｈｆ系の二酸化ケイ素エッチング液およびその製法 | |
| JP5519728B2 (ja) | エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法 | |
| CN103725455A (zh) | 清洁组合物及清洗方法 | |
| TW202012062A (zh) | 清洗方法 | |
| JPH05251416A (ja) | 低表面張力アンモニア水組成物 | |
| JP2894717B2 (ja) | 低表面張力硫酸組成物 | |
| JP2018032781A (ja) | エッチング液、及びエッチング方法 | |
| JP2545094B2 (ja) | ホトレジストストリッピング溶液及びその製法及びホトレジストの除去方法 | |
| CN104428876A (zh) | 蚀刻方法以及使用该方法制造半导体基板产品和半导体器件的方法 | |
| WO2021205885A1 (ja) | 組成物、及び接着性ポリマーの洗浄方法 | |
| KR20030033786A (ko) | 포토레지스트 세정용 조성물 | |
| JP4104715B2 (ja) | 付着水除去用溶剤組成物 | |
| CN103773626A (zh) | 一种低蚀刻的去除光阻蚀刻残留物的清洗液 | |
| CN1038625C (zh) | 防止液体中杂质附着的溶液和使用它的腐蚀方法 | |
| JPH0762386A (ja) | 低表面張力硫酸組成物 |