KR20050085661A - 구리 배선 및(또는) 막의 연마 및(또는) 세정 방법 및 이를위한 조성물 - Google Patents

구리 배선 및(또는) 막의 연마 및(또는) 세정 방법 및 이를위한 조성물 Download PDF

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Publication number
KR20050085661A
KR20050085661A KR1020057010917A KR20057010917A KR20050085661A KR 20050085661 A KR20050085661 A KR 20050085661A KR 1020057010917 A KR1020057010917 A KR 1020057010917A KR 20057010917 A KR20057010917 A KR 20057010917A KR 20050085661 A KR20050085661 A KR 20050085661A
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KR
South Korea
Prior art keywords
composition
group
copper
weight
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057010917A
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English (en)
Korean (ko)
Inventor
수스루트 케사리
윌리엄 엠. 라만나
마이클 제이. 파렌트
로렌스 에이. 자제라
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20050085661A publication Critical patent/KR20050085661A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Weting (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
KR1020057010917A 2002-12-16 2003-10-28 구리 배선 및(또는) 막의 연마 및(또는) 세정 방법 및 이를위한 조성물 Ceased KR20050085661A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,954 2002-12-16
US10/319,954 US6884338B2 (en) 2002-12-16 2002-12-16 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

Publications (1)

Publication Number Publication Date
KR20050085661A true KR20050085661A (ko) 2005-08-29

Family

ID=32506753

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057010917A Ceased KR20050085661A (ko) 2002-12-16 2003-10-28 구리 배선 및(또는) 막의 연마 및(또는) 세정 방법 및 이를위한 조성물

Country Status (7)

Country Link
US (1) US6884338B2 (enExample)
EP (1) EP1572821A1 (enExample)
JP (1) JP4181129B2 (enExample)
KR (1) KR20050085661A (enExample)
CN (1) CN100448941C (enExample)
AU (1) AU2003286734A1 (enExample)
WO (1) WO2004061028A1 (enExample)

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US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7129160B2 (en) * 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
TWI250202B (en) * 2003-05-13 2006-03-01 Eternal Chemical Co Ltd Process and slurry for chemical mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
JP2007088370A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液及び化学機械的研磨方法
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
JP4897604B2 (ja) * 2007-07-27 2012-03-14 株式会社Ｄｎｐファインケミカル フォトマスク製造用のエッチング液
JP4940102B2 (ja) * 2007-10-25 2012-05-30 株式会社 マイクロプロセス エッチング剤組成物及びそれを用いた半導体装置の製造方法
JP2011198901A (ja) * 2010-03-18 2011-10-06 Dnp Fine Chemicals Co Ltd 導電膜用エッチング液および導電膜のエッチング方法
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
CN103160909B (zh) * 2011-12-15 2016-04-27 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
CN114761519B (zh) * 2021-05-20 2023-06-30 斯泰拉化工公司 微细加工处理剂、和微细加工处理方法

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EP0419845A3 (en) 1989-09-05 1991-11-13 General Electric Company Method for preparing metallized polyimide composites
DE4333385C2 (de) 1993-09-30 1997-01-30 Friedrich A Spruegel Flächendesinfektions- und Reinigungsmittel
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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Also Published As

Publication number Publication date
JP2006514706A (ja) 2006-05-11
JP4181129B2 (ja) 2008-11-12
EP1572821A1 (en) 2005-09-14
CN100448941C (zh) 2009-01-07
US20040112753A1 (en) 2004-06-17
AU2003286734A1 (en) 2004-07-29
CN1726265A (zh) 2006-01-25
WO2004061028A1 (en) 2004-07-22
US6884338B2 (en) 2005-04-26

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