CN100448941C - 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 - Google Patents

抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 Download PDF

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Publication number
CN100448941C
CN100448941C CNB2003801059248A CN200380105924A CN100448941C CN 100448941 C CN100448941 C CN 100448941C CN B2003801059248 A CNB2003801059248 A CN B2003801059248A CN 200380105924 A CN200380105924 A CN 200380105924A CN 100448941 C CN100448941 C CN 100448941C
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CN
China
Prior art keywords
copper
composition
perfluoroalkanesulfonyl
formula
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2003801059248A
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English (en)
Chinese (zh)
Other versions
CN1726265A (zh
Inventor
S·克萨里
W·M·拉曼纳
M·J·帕伦特
L·A·扎哲拉
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN1726265A publication Critical patent/CN1726265A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
CNB2003801059248A 2002-12-16 2003-10-28 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 Expired - Fee Related CN100448941C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,954 US6884338B2 (en) 2002-12-16 2002-12-16 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US10/319,954 2002-12-16

Publications (2)

Publication Number Publication Date
CN1726265A CN1726265A (zh) 2006-01-25
CN100448941C true CN100448941C (zh) 2009-01-07

Family

ID=32506753

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801059248A Expired - Fee Related CN100448941C (zh) 2002-12-16 2003-10-28 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物

Country Status (7)

Country Link
US (1) US6884338B2 (enExample)
EP (1) EP1572821A1 (enExample)
JP (1) JP4181129B2 (enExample)
KR (1) KR20050085661A (enExample)
CN (1) CN100448941C (enExample)
AU (1) AU2003286734A1 (enExample)
WO (1) WO2004061028A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160909A (zh) * 2011-12-15 2013-06-19 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
TWI250202B (en) * 2003-05-13 2006-03-01 Eternal Chemical Co Ltd Process and slurry for chemical mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
JP2007088370A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液及び化学機械的研磨方法
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
JP4897604B2 (ja) * 2007-07-27 2012-03-14 株式会社Ｄｎｐファインケミカル フォトマスク製造用のエッチング液
JP4940102B2 (ja) * 2007-10-25 2012-05-30 株式会社 マイクロプロセス エッチング剤組成物及びそれを用いた半導体装置の製造方法
JP2011198901A (ja) * 2010-03-18 2011-10-06 Dnp Fine Chemicals Co Ltd 導電膜用エッチング液および導電膜のエッチング方法
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR20240011661A (ko) * 2021-05-20 2024-01-26 스텔라 케미파 코포레이션 미세 가공 처리제 및 미세 가공 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6280883B1 (en) * 1997-12-10 2001-08-28 3M Innovative Properties Company Bis (perfluoralkanesulfonyl)imide surfactant salts in electrochemical systems
WO2002092211A2 (en) * 2001-05-10 2002-11-21 3M Innovative Properties Company Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419845A3 (en) 1989-09-05 1991-11-13 General Electric Company Method for preparing metallized polyimide composites
DE4333385C2 (de) 1993-09-30 1997-01-30 Friedrich A Spruegel Flächendesinfektions- und Reinigungsmittel
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5652072A (en) 1995-09-21 1997-07-29 Minnesota Mining And Manufacturing Company Battery containing bis(perfluoroalkylsulfonyl)imide and cyclic perfluoroalkylene disulfonylimide salts
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6130161A (en) 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
JPH1192754A (ja) 1997-09-24 1999-04-06 Cci Corp ガラス用撥水処理剤
TW593731B (en) 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6197696B1 (en) 1998-03-26 2001-03-06 Matsushita Electric Industrial Co., Ltd. Method for forming interconnection structure
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6284656B1 (en) 1998-08-04 2001-09-04 Micron Technology, Inc. Copper metallurgy in integrated circuits
US6245663B1 (en) 1998-09-30 2001-06-12 Conexant Systems, Inc. IC interconnect structures and methods for making same
US6291887B1 (en) 1999-01-04 2001-09-18 Advanced Micro Devices, Inc. Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer
IL128920A0 (en) 1999-03-10 2000-02-17 Nova Measuring Instr Ltd Method for monitoring metal cmp
US6290578B1 (en) 1999-10-13 2001-09-18 Speedfam-Ipec Corporation Method for chemical mechanical polishing using synergistic geometric patterns
US6369242B2 (en) 2000-03-17 2002-04-09 Roche Vitamins Inc. Tocopherol manufacture by tris(perfluorohydrocarbylsulphonyl) methane or metal methides thereof
US6358899B1 (en) 2000-03-23 2002-03-19 Ashland, Inc. Cleaning compositions and use thereof containing ammonium hydroxide and fluorosurfactant
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US6372700B1 (en) 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
TW486801B (en) 2000-04-07 2002-05-11 Taiwan Semiconductor Mfg Method of fabricating dual damascene structure
US6291082B1 (en) 2000-06-13 2001-09-18 Advanced Micro Devices, Inc. Method of electroless ag layer formation for cu interconnects
TWI238459B (en) 2000-11-15 2005-08-21 Intel Corp Copper alloy interconnections for integrated circuits and methods of making same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6280883B1 (en) * 1997-12-10 2001-08-28 3M Innovative Properties Company Bis (perfluoralkanesulfonyl)imide surfactant salts in electrochemical systems
WO2002092211A2 (en) * 2001-05-10 2002-11-21 3M Innovative Properties Company Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160909A (zh) * 2011-12-15 2013-06-19 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法
CN103160909B (zh) * 2011-12-15 2016-04-27 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法

Also Published As

Publication number Publication date
KR20050085661A (ko) 2005-08-29
AU2003286734A1 (en) 2004-07-29
US6884338B2 (en) 2005-04-26
EP1572821A1 (en) 2005-09-14
JP2006514706A (ja) 2006-05-11
JP4181129B2 (ja) 2008-11-12
CN1726265A (zh) 2006-01-25
US20040112753A1 (en) 2004-06-17
WO2004061028A1 (en) 2004-07-22

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Termination date: 20131028