JP2006508227A5 - - Google Patents

Download PDF

Info

Publication number
JP2006508227A5
JP2006508227A5 JP2004556400A JP2004556400A JP2006508227A5 JP 2006508227 A5 JP2006508227 A5 JP 2006508227A5 JP 2004556400 A JP2004556400 A JP 2004556400A JP 2004556400 A JP2004556400 A JP 2004556400A JP 2006508227 A5 JP2006508227 A5 JP 2006508227A5
Authority
JP
Japan
Prior art keywords
temperature
mixture
case
generally
holding period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004556400A
Other languages
English (en)
Other versions
JP2006508227A (ja
JP4594100B2 (ja
Filing date
Publication date
Priority claimed from FR0214856A external-priority patent/FR2847594B1/fr
Application filed filed Critical
Publication of JP2006508227A publication Critical patent/JP2006508227A/ja
Publication of JP2006508227A5 publication Critical patent/JP2006508227A5/ja
Application granted granted Critical
Publication of JP4594100B2 publication Critical patent/JP4594100B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

一般にＮＨ4Ｘは混合物中に過剰に存在していることから、プログラムされた温度が着実に上昇するとしても、混合物の実際の温度は一般にＮＨ4Ｘが除去される温度に対応して温度の保持期間を示す。ＮＨ4Ｃｌの場合、この温度保持期間は３００℃と４００℃の間にある。これは、ＮＨ4Ｘが最初に遊離した形である場合だけでなく、錯体化されている場合にもあてはまる。加熱される物質は、この温度保持期間の後ではずっと少しのＮＨ4Ｘを含有しているので、混合物は気体環境中に存在する不純物（水と酸素の存在）によって容易に酸化され、温度が高いほどそうなると予想することができよう（この段階で、加熱される物質の温度は一般に３００℃を超える）。出願人は、これがそうではなく、希土類ハロゲン化物の酸化を制御することが可能であることを発見した。
JP2004556400A 2002-11-27 2003-11-13 希土類ハロゲン化物ブロックの作製方法 Expired - Lifetime JP4594100B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0214856A FR2847594B1 (fr) 2002-11-27 2002-11-27 Preparation de blocs d'halogenure de terre rare
PCT/FR2003/003356 WO2004050792A1 (fr) 2002-11-27 2003-11-13 Preparation de blocs d'halogenure de terre rare

Publications (3)

Publication Number Publication Date
JP2006508227A JP2006508227A (ja) 2006-03-09
JP2006508227A5 true JP2006508227A5 (ja) 2010-01-28
JP4594100B2 JP4594100B2 (ja) 2010-12-08

Family

ID=32241653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004556400A Expired - Lifetime JP4594100B2 (ja) 2002-11-27 2003-11-13 希土類ハロゲン化物ブロックの作製方法

Country Status (15)

Country Link
US (3) US7670578B2 (ja)
EP (1) EP1567611B1 (ja)
JP (1) JP4594100B2 (ja)
KR (1) KR20050086814A (ja)
CN (2) CN1717466B (ja)
AT (1) ATE391158T1 (ja)
AU (1) AU2003290186B2 (ja)
CA (1) CA2507283A1 (ja)
DE (1) DE60320135T2 (ja)
EA (1) EA009230B1 (ja)
FR (1) FR2847594B1 (ja)
PL (1) PL206055B1 (ja)
SI (1) SI1567611T1 (ja)
UA (1) UA87656C2 (ja)
WO (1) WO2004050792A1 (ja)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1014401C2 (nl) * 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2840926B1 (fr) * 2002-06-12 2005-03-04 Saint Gobain Cristaux Detecteu Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
FR2855830B1 (fr) * 2003-06-05 2005-07-08 Stichting Tech Wetenschapp Cristaux scintillateurs du type iodure de terre rare
US7576329B2 (en) * 2003-10-17 2009-08-18 General Electric Company Scintillator compositions, and related processes and articles of manufacture
FR2869115B1 (fr) * 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit
US7202477B2 (en) * 2005-03-04 2007-04-10 General Electric Company Scintillator compositions of cerium halides, and related articles and processes
US20060226368A1 (en) * 2005-03-30 2006-10-12 General Electric Company Scintillator compositions based on lanthanide halides and alkali metals, and related methods and articles
US7700003B2 (en) 2005-03-30 2010-04-20 General Electric Company Composition, article, and method
US20100230601A1 (en) * 2005-03-30 2010-09-16 General Electric Company Composition, article, and method
CN1327043C (zh) * 2005-04-12 2007-07-18 北京工物科技有限责任公司 掺铈氯化镧闪烁晶体的制备方法
CA2622381C (en) * 2005-09-16 2014-05-20 Stichting Voor De Technische Wetenschappen High light yield fast scintillator
US7541589B2 (en) * 2006-06-30 2009-06-02 General Electric Company Scintillator compositions based on lanthanide halides, and related methods and articles
JP5103879B2 (ja) 2006-09-20 2012-12-19 日立化成工業株式会社 シンチレータ用結晶及び放射線検出器
US20080131348A1 (en) * 2006-12-04 2008-06-05 General Electric Company Scintillation compositions and method of manufacture thereof
US20080131347A1 (en) * 2006-12-04 2008-06-05 General Electric Company Scintillation compositions and method of manufacture thereof
US9404036B2 (en) * 2007-10-30 2016-08-02 The Regents Of The University Of California Alkali metal and alkali earth metal gadolinium halide scintillators
US8373130B2 (en) * 2007-11-09 2013-02-12 Koninklijke Philips Electronics N.V. Protection of hygroscopic scintillators
US7767975B2 (en) * 2007-12-04 2010-08-03 Saint-Gobain Cristaux Et Detecteurs Ionizing radiation detector
FR2929296B1 (fr) * 2008-03-31 2011-01-21 Saint Gobain Cristaux Detecteurs Recuit de monocristaux
US20100224798A1 (en) * 2008-09-11 2010-09-09 Stichting Voor De Technische Wetenschappen Scintillator based on lanthanum iodide and lanthanum bromide
CN101824646B (zh) * 2009-03-02 2012-05-30 北京滨松光子技术股份有限公司 真空封闭式坩埚下降法生长掺铊碘化钠单晶体
US20110085957A1 (en) * 2009-10-09 2011-04-14 Johann-Christoph Von Saldern Process for producing scintillation materials of low strain birefringence and high refractive index uniformity
US8673179B2 (en) * 2009-10-09 2014-03-18 Hellma Materials Gmbh Scintillation materials of low oxygen content and process for producing same
FR2954760B1 (fr) 2009-12-28 2013-12-27 Saint Gobain Cristaux Et Detecteurs Scintillateur en halogenure de terre rare cristallin a face sensible polie
US8598530B2 (en) * 2010-05-10 2013-12-03 Siemens Medical Solutions Usa, Inc. Chloride scintillator for radiation detection
JP5649724B2 (ja) * 2010-05-27 2015-01-07 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド 金属粒子を含有する、希土ドーピングされたハロゲン酸化物発光材料及びその調製方法
CN101913766B (zh) * 2010-08-04 2012-05-30 宁波大学 一种稀土离子掺杂的卤氧硅酸盐玻璃及其制备方法
WO2012021519A2 (en) * 2010-08-10 2012-02-16 Northwestern University Methods and compositions for the detection of x-ray and gamma-ray radiation
WO2012066425A2 (en) 2010-11-16 2012-05-24 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same
EP2718398A4 (en) * 2011-06-06 2014-12-03 Saint Gobain Ceramics SCINTILLATION CRYSTAL COMPRISING RARE EARTH HALIDE AND RADIATION DETECTION SYSTEM COMPRISING SCINTILLATION CRYSTAL
CN102230215B (zh) * 2011-06-28 2015-05-13 中国计量学院 一种掺铈氯溴化镧闪烁晶体的制备方法
FR2978251B1 (fr) 2011-07-19 2014-04-18 Saint Gobain Cristaux Et Detecteurs Detecteur a scintillateur conique
EP3091060B1 (en) * 2011-09-22 2019-08-28 Saint-Gobain Cristaux et Détecteurs Apparatus comprising a scintillator
EP3633010A1 (en) 2012-10-28 2020-04-08 Stichting voor de Technische Wetenschappen Scintillation crystal including a rare earth halide, and a radiation detection apparatus including the scintillation crystal
FR3004467B1 (fr) 2013-04-12 2016-05-27 Saint-Gobain Cristaux Et Detecteurs Fabrication d'une elpasolite stoechiometrique
EP3030629B1 (en) * 2013-07-17 2018-04-18 Koninklijke Philips N.V. Ce3+ activated luminescent compositions for application in imaging systems
CN103409769B (zh) * 2013-07-31 2017-05-03 有研稀土新材料股份有限公司 提纯稀土卤化物的装置及其方法
CN104418378B (zh) * 2013-08-26 2016-09-14 中国科学院过程工程研究所 XNH4Br·LaBr3·YH2O、其制备方法以及无水溴化镧的制备方法
US9334444B1 (en) 2014-02-11 2016-05-10 Sandia Corporation Sorohalide scintillators, phosphors, and uses thereof
FR3022555B1 (fr) 2014-06-23 2017-12-22 Saint-Gobain Cristaux Et Detecteurs Materiau luminescent a couche photonique texturee
CN104326502B (zh) * 2014-11-06 2015-11-18 赣州有色冶金研究所 气相法制备无水氯化稀土的方法和装置
WO2017030624A1 (en) 2015-06-03 2017-02-23 Northwestern University Chalco-phosphate-based hard radiation detectors
CN106753378A (zh) * 2015-11-24 2017-05-31 有研稀土新材料股份有限公司 高纯无水复合稀土卤化物及其制备方法
CN109070898B (zh) 2016-03-04 2022-01-25 大陆-特韦斯股份有限公司 用于确定摩托车的横滚角的方法
CN108264079B (zh) * 2016-12-30 2020-03-27 有研稀土新材料股份有限公司 含氢稀土卤化物、其制备方法及应用
CN107215887B (zh) * 2017-06-09 2018-05-04 厦门中烁光电科技有限公司 无水溴化铈的制备方法
CN109988577B (zh) * 2017-12-27 2020-12-25 有研稀土新材料股份有限公司 稀土卤化物闪烁材料及其应用
WO2019137962A1 (fr) 2018-01-11 2019-07-18 Stichting Voor De Technische Wetenschappen Matériau scintillateur comprenant un halogénure de cation cristallin dopé par eu2+ et co-dopé par sm2+
CN109576789A (zh) * 2018-12-29 2019-04-05 厦门中烁光电科技有限公司 铈掺杂稀土卤化物单晶的处理方法
CN110219046B (zh) * 2019-05-31 2021-08-06 山东大学 一种用于大尺寸溴铅铯单晶体的可视化定向生长装置及生长方法
CN110982527B (zh) * 2019-11-01 2021-12-14 有研稀土新材料股份有限公司 稀土卤化物闪烁材料
KR102595966B1 (ko) 2020-04-14 2023-11-01 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도성 재료, 이온 전도성 재료를 포함하는 전해질 및 형성 방법
KR102468903B1 (ko) 2020-04-14 2022-11-22 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 재료 및 형성 방법
KR20220156941A (ko) * 2020-04-23 2022-11-28 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도층 및 형성 방법
KR20230079480A (ko) 2020-04-23 2023-06-07 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도층 및 형성 방법
EP4104236A4 (en) 2020-08-07 2023-08-02 Saint-Gobain Ceramics & Plastics Inc. ELECTROLYTE MATERIAL AND METHOD OF MANUFACTURE
FR3114104A1 (fr) 2020-09-15 2022-03-18 Saint-Gobain Cristaux Et Detecteurs Matériau scintillateur comprenant une pérovskite d’halogénure dopée
CN115216840B (zh) * 2021-04-14 2023-10-13 中国科学院上海硅酸盐研究所 离子补偿法制备锂铊共掺杂碘化钠闪烁晶体的方法
KR20240023206A (ko) 2021-05-17 2024-02-20 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 물질 및 형성 방법
CN113336255B (zh) * 2021-08-05 2021-10-29 天津包钢稀土研究院有限责任公司 一种稀土卤化物熔盐的提纯方法
CN114959894B (zh) * 2022-05-09 2023-06-09 中国科学院福建物质结构研究所 一种多孔卤氧化镧单晶材料及其制备方法和应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179492A (en) * 1977-07-08 1979-12-18 Cato Research Corp. Process for making rare earth metal chlorides
US5309452B1 (en) * 1992-01-31 1998-01-20 Univ Rutgers Praseodymium laser system
JPH06135715A (ja) * 1992-10-28 1994-05-17 Mitsubishi Materials Corp 高純度希土類ハロゲン化物の製造方法
JPH07157395A (ja) * 1993-12-03 1995-06-20 Tosoh Corp 光化学ホールバーニング結晶及びその製造法
US5478498A (en) * 1993-12-03 1995-12-26 Tosoh Corporation Disordered fluorite-type photochemical hole burning crystal containing SM2+ as active ions
FR2799194B1 (fr) * 1999-10-05 2001-12-14 Corning Sa Billes d'un fluorure d'alcalin ou d'alcalino-terreux polycristallin, leur preparation et leur utilisation pour preparer des monocristaux
NL1014401C2 (nl) 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2840926B1 (fr) * 2002-06-12 2005-03-04 Saint Gobain Cristaux Detecteu Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
US7084403B2 (en) * 2003-10-17 2006-08-01 General Electric Company Scintillator compositions, and related processes and articles of manufacture
FR2869115B1 (fr) 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit

Similar Documents

Publication Publication Date Title
JP2006508227A5 (ja)
JP2009530811A5 (ja)
JP2005526058A5 (ja)
DE60233176D1 (de) Aus chaperonin-polypeptiden gebildete geordnete biologische nanostrukturen
JP2007518723A5 (ja)
JP2005154254A5 (ja)
JP2010515698A5 (ja)
JP2007508034A5 (ja)
JP2007500753A5 (ja)
JP2005509057A5 (ja)
ATE283239T1 (de) Verfahren zur herstellung von chlorsilanen
MXPA05011962A (es) Oxiarenos substituidos.
JP2008511536A5 (ja)
JP2005538088A5 (ja)
NO20033207D0 (no) Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium
JP2006287207A5 (ja)
JP2004534810A5 (ja)
HUP0400769A2 (hu) Eljárás peroxiészter előállítására
JP2006526890A5 (ja)
DE50304466D1 (de) Verfahren zur herstellung von organohalogensilanen aus amorphem silizium
DE50103422D1 (de) Verfahren zur herstellung von trichlorsilan
JP2004527549A5 (ja)
JP2005536335A5 (ja)
JP4657181B2 (ja) メタルシリコンの着色方法
JP2003115486A5 (ja) 疎水性多孔質シリカ材料及びその製造方法