JP2006503781A - 単結晶炭化ケイ素の形成 - Google Patents
単結晶炭化ケイ素の形成 Download PDFInfo
- Publication number
- JP2006503781A JP2006503781A JP2004505415A JP2004505415A JP2006503781A JP 2006503781 A JP2006503781 A JP 2006503781A JP 2004505415 A JP2004505415 A JP 2004505415A JP 2004505415 A JP2004505415 A JP 2004505415A JP 2006503781 A JP2006503781 A JP 2006503781A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- compound
- chamber
- substrate
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
- 非コングルエントな気相化を呈し、単結晶又は多結晶形態で存在する化合物を単結晶状態で形成する装置(10)において、
前記化合物の多結晶供給源が形成されるレベルに配された基板(42)及び前記化合物の単結晶種(46)を有する第1室(20)と、
第2室(14)とを備え、
前記基板は前記2室の間に配置されることを特徴とし、
前記基板に前記化合物を多結晶の形態で堆積させることのできる前記第2室に、前記化合物のガス前躯体を供給する手段(36)と、
前記基板を前記種の温度より高く維持して、前記多結晶供給源を昇華させ、前記化合物の種に単結晶形態で堆積させる加熱手段(26)とを具備する装置。 - 前記化合物が炭化ケイ素であることを特徴とする請求項1に記載の装置。
- 前記第1室(20)が、第1円筒壁(16)と、前記種(46)をそれに付着させる、少なくとも部分的に前記第1の壁の一端部を覆う蓋(18)と、少なくとも部分的に前記第1の壁の反対側の端部を覆う前記基板(42)とによって画定され、前記基板が透過性であることを特徴とする請求項1に記載の装置。
- 前記第2室(14)が、基板(42)側の前記第1円筒壁(16)の延長上に配置された第2円筒壁(12)によって画定され、前記第1(16)及び第2(12)円筒壁が管(26)によって囲まれて、前記第1及び第2円筒壁で管状空所(28)を画定し、前記第2室(14)が前記管状空所に通じることを特徴とする請求項3に記載の装置。
- 前記第2室(14)中に存在するガスを排気するために、前記管状空所(28)内にガス流を発生させる手段(38、40)を備えることを特徴とする請求項4に記載の装置。
- 前記加熱手段(26)が、前記管(26)を囲んで、A.C.電流を伝導して前記管だけに誘導電流を誘導する少なくとも1個の誘導螺旋体を備えることを特徴とする請求項5に記載の装置。
- 前記蓋(18)が、前記第1円筒壁(16)に関して、前記第1円筒壁の軸(Z)に沿って移動可能に組み立てられていることを特徴とする請求項3に記載の装置。
- 非コングルエントな気相化を呈し、単結晶又は多結晶形態で存在する化合物を単結晶状態に形成する方法において、
同時的になされる、
第1(20)及び第2(14)室の間に配置された透過性基板(42)上に、前記第2室に供給する前記化合物のガス前躯体の化学気相反応によって、前記化合物の供給源を多結晶形態で形成するステップと、
前記供給源の一部の昇華によって前記第1室中にガス状化合物を形成するステップと、
前記第1室中に配置された種(46)に、ガス状化合物の凝縮によって前記化合物を単結晶形態で形成するステップとを備える方法。 - 前記化合物が、炭化ケイ素であることを特徴とする請求項8に記載の方法。
- 前記種(46)が、前記単結晶炭化ケイ素の形成とともに前記基板(42)から遠ざけられることを特徴とする請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0205967A FR2839730B1 (fr) | 2002-05-15 | 2002-05-15 | Formation de carbure de silicium monocristallin |
PCT/FR2003/001480 WO2003097905A2 (fr) | 2002-05-15 | 2003-05-15 | Appareil et procede pour la formation de carbure de silicum monocristallin |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006503781A true JP2006503781A (ja) | 2006-02-02 |
JP4578964B2 JP4578964B2 (ja) | 2010-11-10 |
Family
ID=29286509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004505415A Expired - Fee Related JP4578964B2 (ja) | 2002-05-15 | 2003-05-15 | 単結晶炭化ケイ素の形成 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7655091B2 (ja) |
EP (1) | EP1511884B1 (ja) |
JP (1) | JP4578964B2 (ja) |
KR (1) | KR101031407B1 (ja) |
AU (1) | AU2003263226A1 (ja) |
DE (1) | DE60324793D1 (ja) |
FR (1) | FR2839730B1 (ja) |
WO (1) | WO2003097905A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2839730B1 (fr) * | 2002-05-15 | 2004-08-27 | Centre Nat Rech Scient | Formation de carbure de silicium monocristallin |
JP4977700B2 (ja) * | 2005-07-21 | 2012-07-18 | ハード テクノロジーズ プロプライエタリー リミテッド | 金属物の複合表面処理 |
US20070169687A1 (en) * | 2006-01-26 | 2007-07-26 | Caracal, Inc. | Silicon carbide formation by alternating pulses |
US8361227B2 (en) * | 2006-09-26 | 2013-01-29 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
ITMI20062213A1 (it) * | 2006-11-20 | 2008-05-21 | Lpe Spa | Reattore per crescere cristalli |
JP5779171B2 (ja) | 2009-03-26 | 2015-09-16 | トゥー‐シックス・インコーポレイテッド | SiC単結晶の昇華成長方法及び装置 |
KR20120135739A (ko) * | 2011-06-07 | 2012-12-17 | 엘지이노텍 주식회사 | 잉곳 제조 장치 및 잉곳 제조 방법 |
JP7258273B2 (ja) * | 2018-09-06 | 2023-04-17 | 株式会社レゾナック | SiC単結晶の製造方法及び被覆部材 |
CN109402731B (zh) * | 2018-10-17 | 2021-01-15 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
SE545281C2 (en) * | 2021-03-11 | 2023-06-13 | Kiselkarbid I Stockholm Ab | Simultaneous growth of two silicon carbide layers |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04265294A (ja) * | 1991-02-19 | 1992-09-21 | Toshiba Corp | 半導体結晶の製造方法 |
JPH05208900A (ja) * | 1992-01-28 | 1993-08-20 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の成長装置 |
JPH10509689A (ja) * | 1994-12-01 | 1998-09-22 | シーメンス アクチエンゲゼルシヤフト | 昇華育種による炭化シリコン単結晶の製造方法及び装置 |
JPH11513352A (ja) * | 1995-10-04 | 1999-11-16 | エービービー リサーチ リミテッド | 物体をエピタキシャル成長させる方法及びそのような成長のための装置 |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
WO2001048277A1 (fr) * | 1999-12-27 | 2001-07-05 | Showa Denko Kabushiki Kaisha | Procede et appareil utiles pour produire un monocristal de carbure de silicium |
JP2001226197A (ja) * | 2000-02-18 | 2001-08-21 | Denso Corp | 炭化珪素単結晶の製造方法及び製造装置 |
JP2002274994A (ja) * | 2001-03-23 | 2002-09-25 | Nippon Steel Corp | 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2707671B1 (fr) * | 1993-07-12 | 1995-09-15 | Centre Nat Rech Scient | Procédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt chimique en phase vapeur. |
SE9502288D0 (sv) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
US5989340A (en) * | 1995-11-14 | 1999-11-23 | Siemens Aktiengesellschaft | Process and device for sublimation growing of silicon carbide monocrystals |
FR2745299B1 (fr) * | 1996-02-27 | 1998-06-19 | Centre Nat Rech Scient | Procede de formation de revetements de ti1-xalxn |
US6039812A (en) * | 1996-10-21 | 2000-03-21 | Abb Research Ltd. | Device for epitaxially growing objects and method for such a growth |
US6306211B1 (en) * | 1999-03-23 | 2001-10-23 | Matsushita Electric Industrial Co., Ltd. | Method for growing semiconductor film and method for fabricating semiconductor device |
US6514338B2 (en) * | 1999-12-27 | 2003-02-04 | Showa Denko Kabushiki Kaisha | Method and apparatus for producing silicon carbide single crystal |
JP3959952B2 (ja) * | 2000-11-10 | 2007-08-15 | 株式会社デンソー | 炭化珪素単結晶の製造方法及び製造装置 |
JP3864696B2 (ja) * | 2000-11-10 | 2007-01-10 | 株式会社デンソー | 炭化珪素単結晶の製造方法及び製造装置 |
JP4275308B2 (ja) * | 2000-12-28 | 2009-06-10 | 株式会社デンソー | 炭化珪素単結晶の製造方法およびその製造装置 |
FR2831836B1 (fr) * | 2001-11-08 | 2004-04-23 | Inst Nat Polytech Grenoble | Procede de formation de sites catalytiques sur la surface d'un support |
FR2839730B1 (fr) * | 2002-05-15 | 2004-08-27 | Centre Nat Rech Scient | Formation de carbure de silicium monocristallin |
DE602004001802T3 (de) * | 2003-04-24 | 2012-01-26 | Norstel Ab | Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung |
US7147713B2 (en) * | 2003-04-30 | 2006-12-12 | Cree, Inc. | Phase controlled sublimation |
-
2002
- 2002-05-15 FR FR0205967A patent/FR2839730B1/fr not_active Expired - Fee Related
-
2003
- 2003-05-15 JP JP2004505415A patent/JP4578964B2/ja not_active Expired - Fee Related
- 2003-05-15 AU AU2003263226A patent/AU2003263226A1/en not_active Abandoned
- 2003-05-15 KR KR1020047018440A patent/KR101031407B1/ko not_active IP Right Cessation
- 2003-05-15 DE DE60324793T patent/DE60324793D1/de not_active Expired - Lifetime
- 2003-05-15 EP EP03752816A patent/EP1511884B1/fr not_active Expired - Fee Related
- 2003-05-15 US US10/514,159 patent/US7655091B2/en not_active Expired - Fee Related
- 2003-05-15 WO PCT/FR2003/001480 patent/WO2003097905A2/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04265294A (ja) * | 1991-02-19 | 1992-09-21 | Toshiba Corp | 半導体結晶の製造方法 |
JPH05208900A (ja) * | 1992-01-28 | 1993-08-20 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の成長装置 |
JPH10509689A (ja) * | 1994-12-01 | 1998-09-22 | シーメンス アクチエンゲゼルシヤフト | 昇華育種による炭化シリコン単結晶の製造方法及び装置 |
JPH11513352A (ja) * | 1995-10-04 | 1999-11-16 | エービービー リサーチ リミテッド | 物体をエピタキシャル成長させる方法及びそのような成長のための装置 |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
WO2001048277A1 (fr) * | 1999-12-27 | 2001-07-05 | Showa Denko Kabushiki Kaisha | Procede et appareil utiles pour produire un monocristal de carbure de silicium |
JP2001226197A (ja) * | 2000-02-18 | 2001-08-21 | Denso Corp | 炭化珪素単結晶の製造方法及び製造装置 |
JP2002274994A (ja) * | 2001-03-23 | 2002-09-25 | Nippon Steel Corp | 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット |
Also Published As
Publication number | Publication date |
---|---|
WO2003097905A2 (fr) | 2003-11-27 |
EP1511884B1 (fr) | 2008-11-19 |
DE60324793D1 (de) | 2009-01-02 |
AU2003263226A8 (en) | 2003-12-02 |
WO2003097905A3 (fr) | 2004-04-08 |
AU2003263226A1 (en) | 2003-12-02 |
JP4578964B2 (ja) | 2010-11-10 |
US7655091B2 (en) | 2010-02-02 |
KR101031407B1 (ko) | 2011-04-26 |
FR2839730B1 (fr) | 2004-08-27 |
KR20050014821A (ko) | 2005-02-07 |
US20050257734A1 (en) | 2005-11-24 |
EP1511884A2 (fr) | 2005-03-09 |
FR2839730A1 (fr) | 2003-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1471168B1 (en) | Device and method for producing single crystals by vapour deposition | |
US8512471B2 (en) | Halosilane assisted PVT growth of SiC | |
US6136093A (en) | Method of making GaN single crystal and apparatus for making GaN single crystal | |
US6193797B1 (en) | Method of making SiC single crystal and apparatus for making SiC single crystal | |
JP4733485B2 (ja) | 炭化珪素単結晶成長用種結晶の製造方法、炭化珪素単結晶成長用種結晶、炭化珪素単結晶の製造方法、および炭化珪素単結晶 | |
US6336971B1 (en) | Method and apparatus for producing silicon carbide single crystal | |
JP4706565B2 (ja) | 炭化珪素単結晶の製造方法 | |
JP2016507467A (ja) | バナジウムドープ単結晶およびその成長方法 | |
JPH05208900A (ja) | 炭化ケイ素単結晶の成長装置 | |
EP1026290A1 (en) | Method and apparatus for producing silicon carbide single crystal | |
JP4578964B2 (ja) | 単結晶炭化ケイ素の形成 | |
JP2008169111A (ja) | 炭化珪素単結晶の製造方法 | |
JPH11199395A (ja) | 炭化珪素単結晶の製造方法 | |
JP2002274994A (ja) | 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット | |
JP4505202B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
CN216039934U (zh) | 一种碳化硅晶体生长装置和设备 | |
JP2007145679A (ja) | 窒化アルミニウム単結晶の製造装置及びその製造方法 | |
JPH09157091A (ja) | 4h型単結晶炭化珪素の製造方法 | |
JP4309509B2 (ja) | 熱分解黒鉛からなる単結晶成長用のルツボの製造方法 | |
JP2001192299A (ja) | 炭化珪素単結晶の製造方法及び製造装置 | |
JP2008050174A (ja) | 単結晶SiC及びその製造方法 | |
KR200412993Y1 (ko) | 단결정 성장 장치 | |
JP2008273819A (ja) | 炭化珪素単結晶の製造方法および該製造方法により得られる炭化珪素単結晶 | |
JPH05208897A (ja) | 炭化ケイ素単結晶基板製造方法 | |
JPH0656596A (ja) | 炭化ケイ素単結晶の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060510 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090609 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090901 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100727 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100825 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |