JP2006339651A - 側面発光型ledパッケージおよびその製造方法 - Google Patents
側面発光型ledパッケージおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000465 moulding Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 39
- 229920006336 epoxy molding compound Polymers 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 238000001721 transfer moulding Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000638 solvent extraction Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】光源5から出た光を側方向に投射させるための側面発光型LEDパッケージ1において、電極16が形成された基板15と、基板15上に電気的に連結配置された光源5と、基板15と光源5を覆って保護するモールディング部10及びモールディング部10の外面を覆い、光源5の装着平面に対して一側方向に投光面17を形成した反射層20とを含む。これにより、反射層20を所望の形に容易に製作でき、LEDチップサイズの影響なく小型で大量生産が可能で、LEDアレイタイプにも容易に製作が可能なため作業生産性を大きく向上させる効果が得られる。
【選択図】図4a
Description
Claims (15)
- 光源から出た光を側方に放射させる側面発光型LEDパッケージであって、
電極が形成された基板と、
前記基板の上に電気的に連結して配置された光源と、
前記基板および前記光源を被覆するモールディング部と、
前記モールディング部の外面に形成され、前記光源の装着平面に対して一方の側方に投光面を形成する反射層と
を含む側面発光型LEDパッケージ。 - 前記反射層は、その上部面が曲面を有する構造、前記上部面は水平で投光面の反対面が傾斜面で形成された構造、および、上部面が一方の側に傾いた傾斜面を有する構造のうちの少なくともひとつの構造を有する請求項1に記載の側面発光型LEDパッケージ。
- 前記反射層は、Al、Au、Ag、Ni、W、TiおよびPtから選択された少なくともひとつの金属を蒸着またはメッキして形成される請求項1に記載の側面発光型LEDパッケージ。
- 前記反射層は、反射率が高い薄膜を前記モールディング部に付着させて形成される請求項1に記載の側面発光型LEDパッケージ。
- 前記基板は、前記電極が形成されたPCBまたはセラミック材料を含む請求項1に記載の側面発光型LEDパッケージ。
- 前記モールディング部は、その内部に一つ以上のLEDチップが配置され光源を形成する請求項1に記載の側面発光型LEDパッケージ。
- 前記投光面は、LEDチップが配置される平面に対して直角を成す請求項6に記載の側面発光型LEDパッケージ。
- 光源から出た光を側方向に投射させる側面発光型LEDパッケージの製造方法であって、
電極が形成された基板を提供する段階と、
前記基板の上に光源を配置する段階と、
前記光源と基板上にモールディング部を形成する段階と、
前記モールディング部を1次ダイシングして個別的なパッケージ別に区画する段階と、
前記モールディング部の外面を覆う反射層を形成する段階と、
前記モールディング部と反射層の一面を2次ダイシングして一側に投光面を形成する段階と
を含む製造方法。 - 前記基板を提供する段階は、前記基板上でLEDチップの相互の間に絶縁層(Solder Resistor)を形成して反射層と絶縁を成す処理を含む請求項8に記載の製造方法。
- 前記モールディング部を形成する段階は蛍光体が混合された透明EMC(Epoxy Molding Compound)トランスファーモールディング法を利用する請求項8に記載の製造方法。
- 前記反射層を形成する段階は、Al、Au、Ag、Ni、W、TiおよびPtから選択された少なくともひとつの金属を蒸着またはメッキする処理を含む請求項8に記載の製造方法。
- 前記反射層を形成する段階は、反射率が高い薄膜を前記モールディング部に付着させる処理を含む請求項8に記載の製造方法。
- 前記モールディング部を1次ダイシングする段階は、前記モールディング部の内部に一つ以上のLEDチップを配置して光源が形成されるように前記モールディング部を切断する処理を含む請求項8に記載の製造方法。
- 前記投光面を形成する段階は、LEDチップが配置される平面に対して直角を成す側方向に前記モールディング部および反射層を切断する処理を含む請求項8に記載の製造方法。
- 前記投光面を形成する段階は、前記基板を切断してLEDパッケージを個別に含む側面発光型LEDパッケージ形成する処理を含む請求項14に記載の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0046796 | 2005-06-01 | ||
KR1020050046796A KR100674871B1 (ko) | 2005-06-01 | 2005-06-01 | 측면 발광형 엘이디 패키지 및 그 제조 방법 |
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Publication Number | Publication Date |
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JP2006339651A true JP2006339651A (ja) | 2006-12-14 |
JP4976748B2 JP4976748B2 (ja) | 2012-07-18 |
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JP2006152957A Active JP4976748B2 (ja) | 2005-06-01 | 2006-06-01 | 側面発光型ledパッケージおよびその製造方法 |
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US (2) | US7338823B2 (ja) |
JP (1) | JP4976748B2 (ja) |
KR (1) | KR100674871B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011233754A (ja) * | 2010-04-28 | 2011-11-17 | Hitachi Cable Ltd | 発光素子及び発光素子の製造方法 |
KR101122432B1 (ko) | 2010-04-08 | 2012-03-09 | 희성전자 주식회사 | 사이드 뷰 방식의 발광다이오드 어레이 및 그 제조방법 |
JP2019095536A (ja) * | 2017-11-21 | 2019-06-20 | 日本電気硝子株式会社 | プリズム及び発光装置 |
KR20200054637A (ko) * | 2018-11-12 | 2020-05-20 | 주식회사 루멘스 | 측면 발광형 발광소자 패키지 및 그 제조방법 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR101235460B1 (ko) * | 2006-02-14 | 2013-02-20 | 엘지이노텍 주식회사 | 측면 발광형 엘이디 및 그 제조방법 |
JP4952215B2 (ja) * | 2006-08-17 | 2012-06-13 | 日亜化学工業株式会社 | 発光装置 |
US20090085053A1 (en) * | 2007-01-25 | 2009-04-02 | Hsing Chen | Light emitting diode package with large viewing angle |
US8092042B2 (en) * | 2007-05-03 | 2012-01-10 | Ruud Lighting, Inc. | Shield member in LED apparatus |
EP2147349B1 (en) * | 2007-05-10 | 2013-07-17 | Koninklijke Philips Electronics N.V. | Led-array system |
WO2009074919A1 (en) * | 2007-12-11 | 2009-06-18 | Koninklijke Philips Electronics N.V. | Side emitting device with hybrid top reflector |
KR100864476B1 (ko) | 2008-03-03 | 2008-10-20 | 신현종 | 발광 다이오드 조명 장치 |
DE102009008738A1 (de) * | 2009-02-12 | 2010-08-19 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung |
KR101621544B1 (ko) | 2009-10-22 | 2016-05-17 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 및 이를 구비한 백라이트 유닛 |
TWI404242B (zh) * | 2009-11-26 | 2013-08-01 | Advanced Optoelectronic Tech | 發光二極體及其製程 |
KR101615497B1 (ko) * | 2009-11-27 | 2016-04-27 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101037507B1 (ko) * | 2010-01-12 | 2011-05-26 | 희성전자 주식회사 | 발광다이오드 패키지, 이를 이용한 발광다이오드 어레이 및 백라이트 유닛 |
DE102011075531A1 (de) * | 2011-05-09 | 2012-11-15 | Osram Ag | Leuchtdiodenanordnung und Verfahren zum Herstellen einer Leuchtdiodenanordnung |
US8814378B2 (en) * | 2011-12-05 | 2014-08-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | LCD device and LED package structure thereof |
CN102522487B (zh) * | 2011-12-05 | 2014-10-15 | 深圳市华星光电技术有限公司 | 液晶显示装置及其led封装结构 |
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Also Published As
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US7338823B2 (en) | 2008-03-04 |
KR20060125023A (ko) | 2006-12-06 |
JP4976748B2 (ja) | 2012-07-18 |
US20060284203A1 (en) | 2006-12-21 |
US20080128736A1 (en) | 2008-06-05 |
KR100674871B1 (ko) | 2007-01-30 |
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