JP2006332681A - 発光ダイオードの製造方法 - Google Patents
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Abstract
発光ダイオードの製造方法を提供する。
【解決手段】
窒化物半導体基板にLLO層とエピ層を形成し、レーザリフトオフ(Laser Lift-Off)を通じて窒化物半導体基板を分離することにより、エピ層の特性を向上させて高品位、高効率の発光ダイオードを製造することができる。
また、本発明は設けられたLLO層をレーザ光で除去して相対的に高価な窒化物半導体基板を分離してリサイクルできるようにして製造コストを節減することができる。
【選択図】図3c
Description
以下、添付した図面に基づき本発明の望ましい実施形態を説明すれば次の通りである。
210、311: LLO(Laser lift-off)層
220: 半導体膜
230: 第1層
240、314: 活性層
250: 第2層
310: 窒化物半導体基板
230: ドーピングされないGaN層
313: N-GaN層
315: P-GaN層
316: P-オーミックコンタクト物質
317、332: 反射用メタル
318: UBM層
320: 伝導性基板
321: オーミックコンタクト物質
322: ソルダ
330: N-オーミックコンタクト物質
360、370: 金属支持部
371: キャリア
372: 接着用物質
Claims (25)
- 基板の上部に照射されたレーザ光により除去されるLLO層を形成する段階と、
前記LLO層の上部に第1極性を有する第1層、活性層と第1極性と逆の第2極性を有する第2層を形成する段階と、
前記基板を通じて前記LLO層にレーザ光を照射して前記LLO層を除去して前記基板を離脱させる段階とを含んでなる発光ダイオードの製造方法。 - 前記第2層の上部に、
金属構造物または金属が含まれた構造物を形成する工程がさらに備えられることを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記LLO層と前記第1層との間に、
前記LLO層の上部または下部のいずれか一つ以上の面にドーピングされていない半導体層をさらに形成することを特徴とする請求項1または2に記載の発光ダイオードの製造方法。 - 窒化物半導体基板の上部にGaN、InGaN、AlGaNとInAlGaNのうち少なくともいずれか一つ以上の物質よりなるLLO(Laser Lift-off)層と第1半導体層を形成する段階と、
前記第1半導体層の上部に活性層、第2半導体層と第1電極を形成する段階と、
前記窒化物半導体基板を通じて前記LLO層にレーザ光を照射して、前記窒化物半導体基板を分離させるレーザリフトオフ工程を行なう段階と、
前記第1半導体層の下部に第2電極を形成する段階とを含んでなる発光ダイオードの製造方法。 - 前記第1電極形成とレーザリフトオフ工程との間に、
前記第1電極の上部に支持部を形成する工程がさらに備えられることを特徴とする請求項4に記載の発光ダイオードの製造方法。 - 前記レーザリフトオフ工程を行なう前に、
前記第1電極の上部にUBM(Under Bump Metalization)層を形成する工程がさらに備えられていることを特徴とする請求項4に記載の発光ダイオードの製造方法。 - 前記UBM層は、
Ti/Pt/Au、Ti/Au、Ni/AuとPt/Auのいずれか一つであることを特徴とする請求項6に記載の発光ダイオードの製造方法。 - 窒化物半導体基板の上部にGaN、InGaN、AlGaNとInAlGaNのうち少なくともいずれか一つ以上の物質よりなるLLO層と第1半導体層を形成する段階と、
前記第1半導体層の上部に活性層及び第2半導体層を形成する段階と、
前記第2半導体層の上部にキャリアを形成する段階と、
前記窒化物半導体基板を通じて前記LLO層にレーザ光を照射して、前記窒化物半導体基板を分離させるレーザリフトオフ工程を行なう段階と、
前記第2半導体層の上部に形成されたキャリアを除去する段階と、
前記第2半導体層に電極を形成する段階とを含んでなる発光ダイオードの製造方法。 - 前記レーザリフトオフ段階とキャリア除去段階との間に、
前記第1半導体層に金属支持部を形成する段階がさらに備えられることを特徴とする請求項8に記載の発光ダイオードの製造方法。 - 窒化物半導体基板の上部にLLO層と第1半導体層を形成する段階の間には、
前記LLO層の上部または下部のいずれか一つ以上の面にドーピングされていない半導体層をさらに形成することを特徴とする請求項4ないし8のいずれか1項に記載の発光ダイオードの製造方法。 - 前記LLO層の厚さは1Å〜3μmであることを特徴とする請求項1、4と9のいずれか1項に記載の発光ダイオードの製造方法。
- 前記LLO層のエネルギーバンドギャップは、
前記窒化物半導体基板のエネルギーバンドギャップよりは小さく、活性層のエネルギーバンドギャップよりは大きいことを特徴とする請求項4または8に記載の発光ダイオードの製造方法。 - 前記レーザ光の波長は、
LLO層のバンドギャップエネルギーに準ずる波長より短く、前記窒化物半導体基板のバンドギャップエネルギーに準ずる波長よりは長いことを特徴とする請求項4または8に記載の発光ダイオードの製造方法。 - 前記第1と第2半導体層は、
GaNで形成することを特徴とする請求項4または8に記載の発光ダイオードの製造方法。 - 前記第1電極の上部にUBM層を形成する工程は、
前記第1電極と前記UBM層との間に反射層をさらに含み、
前記反射層はAg、Al、Pt、Au、Ni、Ti、透明伝導性酸化物のいずれか一つまたはその組み合わせで形成することを特徴とする請求項6に記載の発光ダイオードの製造方法。 - 前記窒化物半導体基板は、
GaN、InGaN、AlGaN、AlInGaN基板のいずれか一つであるか、またはサファイア基板、シリコン(Si)基板、酸化亜鉛(ZnO)基板と窒化物半導体基板のいずれか一つの基板にGaN、InGaN、AlGaN、AlInGaNの中で少なくとも一つが積層されたテンプレート基板であることを特徴とする請求項4または8に記載の発光ダイオードの製造方法。 - 前記テンプレート基板上に積層されたGaN、InGaN、AlGaNとAlInGaNのうち一つの厚さは0.001μm 〜100μmであることを特徴とする請求項16に記載の発光ダイオードの製造方法。
- 前記UBM層にサブマウントを接合する工程をさらに備え、
前記サブマウントは、
伝導性基板の上面及び背面にオーミックコンタクト用物質を形成し、前記伝導性基板の上面に形成されたオーミックコンタクト用物質の上部にソルダを形成して製造されることを特徴とする請求項6に記載の発光ダイオードの製造方法。 - 前記伝導性基板はSi、AlN、SiC、GaAs、Cu、W、Moの少なくともいずれか一つを含んでなることを特徴とする請求項18に記載の発光ダイオードの製造方法。
- 前記金属支持部は電気メッキ法、無電解メッキ法、CVD法、スパッタリング法と蒸発法のいずれか一つにより形成されることを特徴とする請求項8に記載の発光ダイオードの製造方法。
- 前記キャリアは、
ガラス基板、サファイア基板、シリコン(Si)基板、酸化亜鉛(ZnO)基板と窒化物半導体基板のいずれか一つの基板と、
ガラス基板、サファイア基板、シリコン(Si)基板、酸化亜鉛(ZnO)基板と、窒化物半導体基板のいずれか一つの基板にGaN、InGaN、AlGaN、AlInGaNの少なくとも一つが積層されたテンプレート基板と、
金属基板とステンレス鋼基板のいずれか一つであることを特徴とする請求項8に記載の発光ダイオードの製造方法。 - 前記第2半導体層の上部にキャリアを形成する段階は、
前記第2半導体層の上部に金属支持部を形成し、
前記金属支持部の上部にキャリアを形成することを特徴とする請求項8に記載の発光ダイオードの製造方法。 - 前記金属支持部の厚さは10〜400μmであることを特徴とする請求項22に記載の発光ダイオードの製造方法。
- 前記金属支持部は、
Cu、W、Au、Ni、Mo、Pt、Al、Co、Pd、Ag及びTiよりなる群から一つ以上含んでなることを特徴とする請求項22に記載の発光ダイオードの製造方法。 - 前記LLO層の上面及び下面の両方に前記ドーピングされていない半導体層が形成される場合、
前記LLO層と前記窒化物半導体基板との距離が1〜10μmであることを特徴とする請求項10に記載の発光ダイオードの製造方法。
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EP1727218A2 (en) | 2006-11-29 |
US20060270075A1 (en) | 2006-11-30 |
EP1727218B1 (en) | 2020-06-24 |
CN1870312A (zh) | 2006-11-29 |
JP4925726B2 (ja) | 2012-05-09 |
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US7776637B2 (en) | 2010-08-17 |
EP1727218A3 (en) | 2014-01-22 |
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