JP2006332613A5 - - Google Patents
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- Publication number
- JP2006332613A5 JP2006332613A5 JP2006117418A JP2006117418A JP2006332613A5 JP 2006332613 A5 JP2006332613 A5 JP 2006332613A5 JP 2006117418 A JP2006117418 A JP 2006117418A JP 2006117418 A JP2006117418 A JP 2006117418A JP 2006332613 A5 JP2006332613 A5 JP 2006332613A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon atoms
- aromatic hydrocarbon
- drain electrode
- source electrode
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000004432 carbon atom Chemical group C* 0.000 claims 60
- 239000004065 semiconductor Substances 0.000 claims 40
- 150000002894 organic compounds Chemical class 0.000 claims 22
- 125000000217 alkyl group Chemical group 0.000 claims 20
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims 20
- 125000003118 aryl group Chemical group 0.000 claims 20
- 229910052739 hydrogen Inorganic materials 0.000 claims 20
- 239000001257 hydrogen Substances 0.000 claims 20
- 239000002131 composite material Substances 0.000 claims 17
- 150000002431 hydrogen Chemical class 0.000 claims 17
- 239000000463 material Substances 0.000 claims 12
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 11
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 10
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 claims 5
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 claims 5
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims 5
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims 5
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052783 alkali metal Inorganic materials 0.000 claims 3
- 150000001340 alkali metals Chemical class 0.000 claims 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910003449 rhenium oxide Inorganic materials 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006117418A JP5164338B2 (ja) | 2005-04-22 | 2006-04-21 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005125811 | 2005-04-22 | ||
| JP2005125811 | 2005-04-22 | ||
| JP2005125904 | 2005-04-25 | ||
| JP2005125904 | 2005-04-25 | ||
| JP2006117418A JP5164338B2 (ja) | 2005-04-22 | 2006-04-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332613A JP2006332613A (ja) | 2006-12-07 |
| JP2006332613A5 true JP2006332613A5 (enExample) | 2009-05-28 |
| JP5164338B2 JP5164338B2 (ja) | 2013-03-21 |
Family
ID=37451791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006117418A Expired - Fee Related JP5164338B2 (ja) | 2005-04-22 | 2006-04-21 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8049208B2 (enExample) |
| JP (1) | JP5164338B2 (enExample) |
| KR (1) | KR101182263B1 (enExample) |
| WO (1) | WO2006126363A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006062217A1 (en) * | 2004-12-06 | 2006-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Organic field-effect transistor and semiconductor device including the same |
| US8659008B2 (en) | 2005-07-08 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Composite material and light emitting element, light emitting device, and electronic device using the composite material |
| DE102005048774B4 (de) * | 2005-10-07 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung |
| KR101381365B1 (ko) | 2006-01-26 | 2014-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기 전계효과 트랜지스터 및 반도체장치 |
| JP5138927B2 (ja) * | 2006-12-25 | 2013-02-06 | 共同印刷株式会社 | フレキシブルtft基板及びその製造方法とフレキシブルディスプレイ |
| KR100858088B1 (ko) * | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| GB2448175B (en) | 2007-04-04 | 2009-07-22 | Cambridge Display Tech Ltd | Thin film transistor |
| JP2009001784A (ja) * | 2007-05-18 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | 有機デバイス用材料および有機デバイス用材料を用いた発光素子、発光装置、電子機器、電界効果トランジスタ、半導体装置 |
| JP2009087907A (ja) * | 2007-10-03 | 2009-04-23 | Rohm Co Ltd | 有機半導体発光装置 |
| WO2009063780A1 (ja) * | 2007-11-12 | 2009-05-22 | Mitsui Chemicals, Inc. | 有機トランジスタ |
| KR101427707B1 (ko) * | 2008-02-21 | 2014-08-11 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 기판 및 그의 제조 방법 |
| TW202025500A (zh) | 2008-11-07 | 2020-07-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| WO2011036866A1 (ja) * | 2009-09-25 | 2011-03-31 | 出光興産株式会社 | 有機薄膜トランジスタ |
| KR102088281B1 (ko) * | 2010-01-22 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8436403B2 (en) | 2010-02-05 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor provided with sidewall and electronic appliance |
| KR101780841B1 (ko) * | 2010-02-26 | 2017-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2014143410A (ja) | 2012-12-28 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR102046864B1 (ko) | 2013-03-13 | 2019-11-20 | 삼성전자주식회사 | 유연성 디스플레이 장치 |
| GB2521138B (en) | 2013-12-10 | 2019-01-02 | Flexenable Ltd | Source/Drain Conductors for Transistor Devices |
| US11031506B2 (en) | 2018-08-31 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor using oxide semiconductor |
| KR102236034B1 (ko) * | 2019-11-14 | 2021-04-05 | 삼성전자주식회사 | 유연성 디스플레이 장치 |
Family Cites Families (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US232203A (en) * | 1880-09-14 | Delivery apparatus for printing-machines | ||
| US121860A (en) * | 1871-12-12 | Improvement in papering or putting up needles | ||
| US139303A (en) * | 1873-05-27 | Improvement in grain rakers and loaders | ||
| US110812A (en) * | 1871-01-03 | Washmqton | ||
| US180812A (en) * | 1876-08-08 | Improvement in neck-yokes | ||
| US46096A (en) * | 1865-01-31 | Improvement in necktie-holders | ||
| US228822A (en) * | 1880-06-15 | Fire-escape | ||
| US101154A (en) * | 1870-03-22 | Improvement in fug-mills | ||
| US161192A (en) * | 1875-03-23 | Improvement in copy-slips for teaching penmanship | ||
| US93283A (en) * | 1869-08-03 | Improved car-starter | ||
| EP0347967A1 (en) * | 1988-06-23 | 1989-12-27 | Agfa-Gevaert N.V. | Photosensitive recording material suited for use in electrophotography |
| JP2926845B2 (ja) | 1990-03-23 | 1999-07-28 | 日本電気株式会社 | 有機薄膜el素子 |
| JPH0722670A (ja) * | 1993-07-06 | 1995-01-24 | Osaka Gas Co Ltd | 電界効果型トランジスタ |
| JPH0790256A (ja) * | 1993-09-22 | 1995-04-04 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
| JP2824411B2 (ja) | 1995-08-25 | 1998-11-11 | 株式会社豊田中央研究所 | 有機薄膜発光素子 |
| JP4486713B2 (ja) * | 1997-01-27 | 2010-06-23 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| JPH11251067A (ja) * | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
| JPH11307264A (ja) | 1998-04-17 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機電界発光素子 |
| JPH11307259A (ja) | 1998-04-23 | 1999-11-05 | Tdk Corp | 有機el素子 |
| CN1941453A (zh) * | 1998-06-26 | 2007-04-04 | 出光兴产株式会社 | 发光器件 |
| TW474114B (en) * | 1999-09-29 | 2002-01-21 | Junji Kido | Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device |
| US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
| US6884093B2 (en) * | 2000-10-03 | 2005-04-26 | The Trustees Of Princeton University | Organic triodes with novel grid structures and method of production |
| JP2002204012A (ja) | 2000-12-28 | 2002-07-19 | Toshiba Corp | 有機トランジスタ及びその製造方法 |
| TW545080B (en) | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| TW518909B (en) | 2001-01-17 | 2003-01-21 | Semiconductor Energy Lab | Luminescent device and method of manufacturing same |
| SG118110A1 (en) | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
| US20020139303A1 (en) | 2001-02-01 | 2002-10-03 | Shunpei Yamazaki | Deposition apparatus and deposition method |
| DE10116876B4 (de) | 2001-04-04 | 2004-09-23 | Infineon Technologies Ag | Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung |
| JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| US6951666B2 (en) * | 2001-10-05 | 2005-10-04 | Cabot Corporation | Precursor compositions for the deposition of electrically conductive features |
| DE10153562A1 (de) * | 2001-10-30 | 2003-05-15 | Infineon Technologies Ag | Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial |
| DE10153656A1 (de) * | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht |
| JP4269134B2 (ja) * | 2001-11-06 | 2009-05-27 | セイコーエプソン株式会社 | 有機半導体装置 |
| JP2003187983A (ja) * | 2001-12-17 | 2003-07-04 | Ricoh Co Ltd | 有機elトランジスタ |
| JP2003298056A (ja) | 2002-03-28 | 2003-10-17 | National Institute Of Advanced Industrial & Technology | 有機薄膜電界効果トランジスターおよびその製造方法 |
| US6951694B2 (en) * | 2002-03-29 | 2005-10-04 | The University Of Southern California | Organic light emitting devices with electron blocking layers |
| JP4364551B2 (ja) | 2002-05-15 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
| EP1383179A2 (en) * | 2002-07-17 | 2004-01-21 | Pioneer Corporation | Organic semiconductor device |
| JP2004055652A (ja) | 2002-07-17 | 2004-02-19 | Pioneer Electronic Corp | 有機半導体素子 |
| JP2004103905A (ja) * | 2002-09-11 | 2004-04-02 | Pioneer Electronic Corp | 有機半導体素子 |
| US7158161B2 (en) * | 2002-09-20 | 2007-01-02 | Matsushita Electric Industrial Co., Ltd. | Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element |
| US7094902B2 (en) * | 2002-09-25 | 2006-08-22 | 3M Innovative Properties Company | Electroactive polymers |
| AU2003298493A1 (en) | 2002-12-18 | 2004-07-09 | Matsushita Electric Industrial Co., Ltd. | Exposing apparatus and image forming apparatus using organic electroluminescence element |
| JP2004228371A (ja) | 2003-01-23 | 2004-08-12 | Mitsubishi Chemicals Corp | 電界効果トランジスタ |
| US6828583B2 (en) * | 2003-03-12 | 2004-12-07 | The Regents Of The University Of California | Injection lasers fabricated from semiconducting polymers |
| JP2005026121A (ja) | 2003-07-03 | 2005-01-27 | Fujitsu Ltd | 有機el素子及びその製造方法並びに有機elディスプレイ |
| JP4435735B2 (ja) * | 2003-07-10 | 2010-03-24 | 株式会社イデアルスター | 発光素子、及び発光装置 |
| JP4570341B2 (ja) * | 2003-07-23 | 2010-10-27 | シャープ株式会社 | 薄膜トランジスタおよびそれを用いた表示素子、ならびに液晶表示素子 |
| JP4997688B2 (ja) * | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | 電極、薄膜トランジスタ、電子回路、表示装置および電子機器 |
| TWI407612B (zh) | 2003-09-26 | 2013-09-01 | Semiconductor Energy Lab | 發光元件和其製法 |
| JP4433746B2 (ja) | 2003-09-29 | 2010-03-17 | Tdk株式会社 | 有機電界効果トランジスタ及びその製造方法 |
| EP2276088B1 (en) * | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
| JP4476594B2 (ja) * | 2003-10-17 | 2010-06-09 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| JP4243237B2 (ja) * | 2003-11-10 | 2009-03-25 | 淳二 城戸 | 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法 |
| US7605534B2 (en) * | 2003-12-02 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element having metal oxide and light-emitting device using the same |
| EP2059094A1 (en) * | 2003-12-16 | 2009-05-13 | Panasonic Corporation | Organic electroluminescent device and method for manufacturing the same |
| KR100669716B1 (ko) * | 2004-07-14 | 2007-01-16 | 삼성에스디아이 주식회사 | 페닐카르바졸 화합물 및 이를 이용한 유기 전계 발광 소자 |
| JP4925569B2 (ja) * | 2004-07-08 | 2012-04-25 | ローム株式会社 | 有機エレクトロルミネッセント素子 |
| EP1624502B1 (en) * | 2004-08-04 | 2015-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
| US7208756B2 (en) * | 2004-08-10 | 2007-04-24 | Ishiang Shih | Organic semiconductor devices having low contact resistance |
| US7755278B2 (en) | 2004-08-25 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element provided with organic conductive and inorganic hole transport layers between an electrode and organic emissive layer |
| US7683532B2 (en) | 2004-11-02 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and light emitting device |
| US7714501B2 (en) | 2004-12-01 | 2010-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device and electronic equipment |
| US7545840B2 (en) * | 2004-12-06 | 2009-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser element and method for manufacturing the same |
| WO2006062217A1 (en) | 2004-12-06 | 2006-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Organic field-effect transistor and semiconductor device including the same |
| US7667389B2 (en) | 2004-12-06 | 2010-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| US7989694B2 (en) | 2004-12-06 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element, solar battery, and photo sensor |
| JP2006164708A (ja) * | 2004-12-06 | 2006-06-22 | Semiconductor Energy Lab Co Ltd | 電子機器および発光装置 |
| US9530968B2 (en) | 2005-02-15 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
| US7626198B2 (en) * | 2005-03-22 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Nonlinear element, element substrate including the nonlinear element, and display device |
| US7649197B2 (en) | 2005-03-23 | 2010-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, and light emitting element and light emitting device using the composite material |
| JP5089063B2 (ja) | 2005-03-23 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 複合材料および複合材料を用いた発光素子並びに発光装置 |
| US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7777232B2 (en) | 2005-04-11 | 2010-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device using the same |
| US7560735B2 (en) * | 2005-04-22 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, organic transistor, light-emitting device, and electronic device |
| JP2006332614A (ja) | 2005-04-25 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、有機トランジスタ及びその作製方法 |
| US20060270066A1 (en) * | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
| US20060273303A1 (en) * | 2005-06-07 | 2006-12-07 | Xerox Corporation. | Organic thin film transistors with multilayer electrodes |
| US8659008B2 (en) * | 2005-07-08 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Composite material and light emitting element, light emitting device, and electronic device using the composite material |
| EP1910289A4 (en) * | 2005-08-04 | 2010-06-09 | Semiconductor Energy Lab | CARBAZOLE DERIVATIVE, MATERIAL FOR LIGHT EMITTING ELEMENT OBTAINED USING THE CARBAZOLE DERIVATIVE, LIGHT EMITTING ELEMENT, AND ELECTRONIC DEVICE |
| KR101381365B1 (ko) * | 2006-01-26 | 2014-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기 전계효과 트랜지스터 및 반도체장치 |
-
2006
- 2006-04-19 US US11/887,650 patent/US8049208B2/en not_active Expired - Fee Related
- 2006-04-19 WO PCT/JP2006/308679 patent/WO2006126363A1/en not_active Ceased
- 2006-04-19 KR KR1020077027158A patent/KR101182263B1/ko not_active Expired - Fee Related
- 2006-04-21 JP JP2006117418A patent/JP5164338B2/ja not_active Expired - Fee Related
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