JP2006332340A - 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ - Google Patents
磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ Download PDFInfo
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Abstract
【解決手段】3層以上の金属磁性層と、前記3層以上の金属磁性層の間に設けられた接続層と、前記金属磁性層および接続層に対して垂直方向に電流を通電させる電極とを具備し、前記3層以上の金属磁性層のうち最下層または最上層の金属磁性層は磁化方向が固着され、外部磁界がゼロのときに最下層の金属磁性層の磁化方向と最上層の金属磁性層の磁化方向がほぼ直交するように中間の金属磁性層の磁化方向がねじれている磁気抵抗効果素子。
【選択図】 図2
Description
Ta[3〜5nm]/Ru[2nm]、
NiFeCr[3〜5nm]、
Ta[3nm]/NiFeCr[3〜5nm]、
Ta[3nm]/NiFe[3〜5nm]。
CoPt,CoPrCr,FePtなどのハード層、
IrMn,PtMn,PdPtMnなどの反強磁性層/強磁性層/Ru、
CoPt,CoPrCr,FePtなどのハード層/強磁性層/Ru。
(FeCo/Cu)×n周期、
(CoNi/Cu)×n周期、
(NiFe/Cu)×n周期、
(FeCoNi/Cu)×n周期。
(v1a)反強磁性材料
α−Fe2O3を含む酸化物[0.5〜5nm]、
NiOを含む酸化物[0.5〜5nm]、
Co3O4を含む酸化物[0.5〜5nm]。
MFe2O4(M=Fe,Co,Ni,Cu,Mn,Cr,V,Znなど)を含む酸化物[0.5〜5nm]、
γ−Fe3O4を含む酸化物[0.5〜5nm]。
Mn,Cr,V(少なくとも10atomic%以上)を含む合金[0.5〜5nm]、
IrMn,PrMn,PdPtMn,CrMn,NiMn,RuRhMn,RuMnなど[0.5〜5nm]。
接続層を金属反強磁性体で形成する場合には、スパッタリング、MBE、CVD、蒸着、PLDなどで成膜することが考えられる。
Cu[0〜10nm]/Ru[0〜10nm]。
バッファ層(12):Ta[5nm]/NiFeCr[5nm]
ピニング層(13、14、15):PtMn[15nm]/CoFe[3nm]/Ru[1nm]
金属磁性層(1a):CoFe[2nm]
接続層(2a):Fe80Co20酸化物[1.5nm]
金属磁性層(1b):CoFe[2nm]
接続層(2b):Fe80Co20酸化物[1.5nm]
金属磁性層(1c):CoFe[1nm]/NiFe[3nm]
キャップ層(17):Cu[1nm]/Ru[5nm]
上電極(18):Cu。
Claims (10)
- 3層以上の金属磁性層と、前記3層以上の金属磁性層の間に設けられた接続層と、前記金属磁性層および接続層に対して垂直方向に電流を通電させる電極とを具備し、
前記3層以上の金属磁性層のうち最下層または最上層の金属磁性層は磁化方向が固着され、外部磁界がゼロのときに最下層の金属磁性層の磁化方向と最上層の金属磁性層の磁化方向がほぼ直交するように中間の金属磁性層の磁化方向がねじれていることを特徴とする磁気抵抗効果素子。 - 前記3層以上の金属磁性層のうち、1層の接続層を挟む2層の金属磁性層の磁化方向は30〜60°の角度をなすことを特徴とする請求項1に記載の磁気抵抗効果素子。
- 前記接続層は、厚さが0.5nm以上5.0nm以下の、Co、Fe、Ni、MnおよびCrからなる群より選択される少なくとも一つの元素を含む磁性酸化物または磁性窒化物で形成されていることを特徴とする請求項1に記載の磁気抵抗効果素子。
- 前記接続層は、α−Fe2O3、またはスピネル結晶構造もしくは逆スピネル結晶構造を有するγ−Fe2O3もしくはXFe2O4(X=Fe,Co,Ni,Mn,Cr)で形成されていることを特徴とする請求項3に記載の磁気抵抗効果素子。
- 前記接続層は、厚さが0.5nm以上5nm以下の、金属反強磁性体で形成されていることを特徴とする請求項1に記載の磁気抵抗効果素子。
- 前記接続層は、MnおよびXMn(ここでXはNi、Ir,Pt,Pd,Cr、Ru,またはRh)からなる群より選択される金属反強磁性体で形成されていることを特徴とする請求項5に記載の磁気抵抗効果素子。
- 前記金属磁性層は、厚さが0.5nm以上5nm以下の、Co、FeおよびNiからなる群より選択される少なくとも一つの元素を含む材料で形成されていることを特徴とする請求項1に記載の磁気抵抗効果素子。
- 請求項1ないし7のいずれか1項に記載の磁気抵抗効果素子を具備したことを特徴とする磁気ヘッド。
- 磁気記録媒体と、請求項8に記載の磁気ヘッドとを具備したことを特徴とする磁気記録再生装置。
- 請求項1ないし7のいずれか1項に記載の磁気抵抗効果素子を具備したことを特徴とする磁気メモリ。
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JP2005154023A JP4521316B2 (ja) | 2005-05-26 | 2005-05-26 | 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置 |
US11/441,351 US7602592B2 (en) | 2005-05-26 | 2006-05-26 | Magnetoresistive element including connection layers with magnetization alignment angles therebetween of 30 to 60° between metallic magnetic layers |
CNB2006100924062A CN100452175C (zh) | 2005-05-26 | 2006-05-26 | 磁阻效应元件、磁头、磁记录再生装置、以及磁存储器 |
CNA2008101787019A CN101404320A (zh) | 2005-05-26 | 2006-05-26 | 磁阻效应元件、磁头、磁记录再生装置、以及磁存储器 |
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Cited By (4)
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JP2012178442A (ja) * | 2011-02-25 | 2012-09-13 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置、メモリセルアレイ、及び磁気抵抗効果素子の製造方法 |
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JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
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JP2012054419A (ja) * | 2010-09-01 | 2012-03-15 | Toshiba Corp | 磁気抵抗効果素子の製造方法 |
US8685491B2 (en) | 2010-09-01 | 2014-04-01 | Kabushiki Kaisha Toshiba | Method of manufacturing magnetoresistive element |
JP2012178442A (ja) * | 2011-02-25 | 2012-09-13 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置、メモリセルアレイ、及び磁気抵抗効果素子の製造方法 |
JP2019523984A (ja) * | 2016-05-31 | 2019-08-29 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティ オブ アラバマ | Fe系磁性薄膜 |
US11127445B2 (en) | 2018-09-11 | 2021-09-21 | Toshiba Memory Corporation | Magnetic device |
Also Published As
Publication number | Publication date |
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US7602592B2 (en) | 2009-10-13 |
US20060268470A1 (en) | 2006-11-30 |
CN101404320A (zh) | 2009-04-08 |
JP4521316B2 (ja) | 2010-08-11 |
CN100452175C (zh) | 2009-01-14 |
CN1870140A (zh) | 2006-11-29 |
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