JP2006324669A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP2006324669A JP2006324669A JP2006137673A JP2006137673A JP2006324669A JP 2006324669 A JP2006324669 A JP 2006324669A JP 2006137673 A JP2006137673 A JP 2006137673A JP 2006137673 A JP2006137673 A JP 2006137673A JP 2006324669 A JP2006324669 A JP 2006324669A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 abstract description 19
- 229910052594 sapphire Inorganic materials 0.000 abstract description 7
- 239000010980 sapphire Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 29
- 229910002704 AlGaN Inorganic materials 0.000 description 23
- 238000005530 etching Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】窒化物半導体発光素子20はサファイア基板上21に形成されたn型窒化物半導体層24a、24b及びp型窒化物半導体層28とその間に形成された活性層27を含む。n型窒化物半導体層24a,24bは、上記活性層から遠い順に位置した第1及び第2のn型GaN層24a,24bを含み、上記第1及び第2のn型GaN層24a,24bの間に位置して各界面で2次元電子ガス層を形成するAlxGa1-xN(0<x<1)層23をさらに含む。
【選択図】 図2
Description
22 バッファー層
23 AlドープされたGaN層 (AlドープGaN層)
24a、24b n型GaN層
25 AlN層
26 AlGaN層
27 活性層
28 p型GaN層
29a n側電極
29b p側電極
Claims (14)
- 基板上に形成されたn型及びp型窒化物半導体層とその間に形成された活性層を含む窒化物発光素子において、
前記n型窒化物半導体層は、前記活性層から遠い順に位置した第1及び第2のn型GaN層を含み、
前記第1及び第2のn型GaN層との間に位置して各界面において2次元電子ガス層を形成するAlx Ga1-xN(0<x<1)層をさらに含むことを特徴とする窒化物半導体発光素子。 - 前記Alx Ga1-xN(0<x<1)層は約100〜500Åの厚さを有することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記Alx Ga1-xN(0<x<1)層のxの範囲は約0.05〜0.5であることを特徴とする請求項1又は2に記載の窒化物半導体発光素子。
- 前記Alx Ga1-xN(0<x<1)層は故意的に不純物がドープされていないアンドープ層であることを特徴とする請求項1〜3のいずれか一項に記載の窒化物半導体発光素子。
- 前記Alx Ga1-xN(0<x<1)層と前記第1または第2のn型GaN層との間にAlN層をさらに含むことを特徴とする請求項1〜4のいずれか一項に記載の窒化物半導体発光素子。
- 前記AlN層は約5〜30Åの厚さを有することを特徴とする請求項5に記載の窒化物半導体発光素子。
- 前記基板と前記第1のn型GaN層との間にAlが1%未満にドープされたGaN層をさらに含むことを特徴とする請求項1〜6のいずれか一項に記載の窒化物半導体発光素子。
- 前記窒化物半導体発光素子は前記n型窒化物層の一部領域が露出されるようにメサエッチングされたことを特徴とする請求項1〜7のいずれか一項に記載の窒化物半導体発光素子。
- 前記メサエッチングされたn型窒化物半導体層の露出面は前記2次元電子ガス層が設けられる前記第1のn型GaN層の界面とほぼ同一な平面を成すように形成されたことを特徴とする請求項8に記載の窒化物半導体発光素子。
- 前記メサエッチングされたn型窒化物半導体層の露出面は前記2次元電子ガス層が設けられる前記第1のn型GaN層の界面より低く位置するように形成されたことを特徴とする請求項8又は9に記載の窒化物半導体発光素子。
- 前記第1のn型GaN層と前記Alx Ga1-xN(0<x<1)層との間に形成され、故意的に不純物がドープされていない高抵抗GaN層をさらに含み、2次元電子ガス層が前記高抵抗GaN層界面で形成されることを特徴とする請求項1〜10のいずれか一項に記載の窒化物半導体発光素子。
- 前記窒化物半導体発光素子は前記n型窒化物層の一部領域が露出されるようメサエッチングされ、前記高抵抗GaN層は前記メサエッチングされたn型窒化物半導体層の露出面として提供されることを特徴とする請求項11に記載の窒化物半導体発光素子。
- 前記高抵抗GaN層は80〜200Åの厚さを有することを特徴とする請求項11又は12に記載の窒化物半導体発光素子。
- 前記基板は伝導性基板であり、前記窒化物半導体発光素子は対向する両面に電極が備えられる垂直構造であることを特徴とする請求項1〜13のいずれか一項に記載の窒化物半導体発光素子。
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KR1020050042090A KR100638818B1 (ko) | 2005-05-19 | 2005-05-19 | 질화물 반도체 발광소자 |
KR10-2005-0042090 | 2005-05-19 |
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US (1) | US7479661B2 (ja) |
JP (1) | JP5014671B2 (ja) |
KR (1) | KR100638818B1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007149791A (ja) * | 2005-11-24 | 2007-06-14 | Univ Meijo | 半導体発光素子および半導体発光素子の作成方法 |
WO2009031858A3 (en) * | 2007-09-06 | 2009-05-14 | Lg Innotek Co Ltd | Semiconductor light emitting device and method of fabricating the same |
JP2012224539A (ja) * | 2011-04-19 | 2012-11-15 | Samsung Electronics Co Ltd | GaN薄膜構造物、その製造方法、及びそれを含む半導体素子 |
JP2013069900A (ja) * | 2011-09-22 | 2013-04-18 | Nichia Chem Ind Ltd | 発光素子 |
JP2018534781A (ja) * | 2015-11-09 | 2018-11-22 | エルジー イノテック カンパニー リミテッド | 紫外線発光素子及び発光素子パッケージ |
Families Citing this family (9)
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CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电(江西)有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
US9082892B2 (en) * | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
WO2011083551A1 (ja) | 2010-01-06 | 2011-07-14 | パナソニック株式会社 | 窒化物系半導体発光素子およびその製造方法 |
KR101754900B1 (ko) * | 2010-04-09 | 2017-07-06 | 엘지이노텍 주식회사 | 발광 소자 |
KR20130008295A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 질화물 발광소자 |
KR101961798B1 (ko) * | 2011-12-27 | 2019-03-25 | 엘지이노텍 주식회사 | 발광 소자 |
FR3001335A1 (fr) | 2013-01-22 | 2014-07-25 | Commissariat Energie Atomique | Structure semiconductrice et procede de fabrication d'une structure semiconductrice |
KR102059033B1 (ko) * | 2013-02-04 | 2019-12-24 | 엘지이노텍 주식회사 | 발광소자 |
KR101772815B1 (ko) * | 2016-04-25 | 2017-08-29 | 고려대학교 산학협력단 | 고효율 Ga-polar 수직 발광 다이오드 소자 및 그 제조방법 |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293935A (ja) * | 1996-02-26 | 1997-11-11 | Toshiba Corp | 窒化ガリウム系半導体素子及び窒化ガリウム系半導体発光装置 |
JPH11261106A (ja) * | 1998-03-12 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JP2000031591A (ja) * | 1998-07-08 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
JP2000068594A (ja) * | 1997-09-01 | 2000-03-03 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2000114599A (ja) * | 1998-10-09 | 2000-04-21 | Sharp Corp | 半導体発光素子 |
JP2000244013A (ja) * | 1998-10-06 | 2000-09-08 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2001015452A (ja) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 化合物半導体装置及びその製造方法 |
JP2001274095A (ja) * | 2000-03-24 | 2001-10-05 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP2001352101A (ja) * | 2000-06-06 | 2001-12-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2003086903A (ja) * | 2001-09-07 | 2003-03-20 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003086784A (ja) * | 2001-09-13 | 2003-03-20 | Furukawa Electric Co Ltd:The | GaN系半導体装置 |
JP2003101081A (ja) * | 1996-11-05 | 2003-04-04 | Nichia Chem Ind Ltd | 発光ダイオード |
WO2003049193A1 (en) * | 2001-12-03 | 2003-06-12 | Cree, Inc. | Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors |
JP2004281863A (ja) * | 2003-03-18 | 2004-10-07 | Nichia Chem Ind Ltd | 窒化物半導体素子及びその製造方法 |
JP2005051137A (ja) * | 2003-07-31 | 2005-02-24 | Nichia Chem Ind Ltd | 半導体装置の製造方法及び半導体装置 |
JP2005116725A (ja) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903017A (en) * | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP2001274376A (ja) | 2000-03-24 | 2001-10-05 | Furukawa Electric Co Ltd:The | 低抵抗GaN系緩衝層 |
JP2001274378A (ja) | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 半導体装置 |
-
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- 2005-05-19 KR KR1020050042090A patent/KR100638818B1/ko active IP Right Grant
-
2006
- 2006-05-17 JP JP2006137673A patent/JP5014671B2/ja active Active
- 2006-05-18 US US11/435,751 patent/US7479661B2/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293935A (ja) * | 1996-02-26 | 1997-11-11 | Toshiba Corp | 窒化ガリウム系半導体素子及び窒化ガリウム系半導体発光装置 |
JP2003101081A (ja) * | 1996-11-05 | 2003-04-04 | Nichia Chem Ind Ltd | 発光ダイオード |
JP2000068594A (ja) * | 1997-09-01 | 2000-03-03 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JPH11261106A (ja) * | 1998-03-12 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JP2000031591A (ja) * | 1998-07-08 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
JP2000244013A (ja) * | 1998-10-06 | 2000-09-08 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2000114599A (ja) * | 1998-10-09 | 2000-04-21 | Sharp Corp | 半導体発光素子 |
JP2001015452A (ja) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 化合物半導体装置及びその製造方法 |
JP2001274095A (ja) * | 2000-03-24 | 2001-10-05 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP2001352101A (ja) * | 2000-06-06 | 2001-12-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2003086903A (ja) * | 2001-09-07 | 2003-03-20 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003086784A (ja) * | 2001-09-13 | 2003-03-20 | Furukawa Electric Co Ltd:The | GaN系半導体装置 |
WO2003049193A1 (en) * | 2001-12-03 | 2003-06-12 | Cree, Inc. | Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors |
JP2004281863A (ja) * | 2003-03-18 | 2004-10-07 | Nichia Chem Ind Ltd | 窒化物半導体素子及びその製造方法 |
JP2005051137A (ja) * | 2003-07-31 | 2005-02-24 | Nichia Chem Ind Ltd | 半導体装置の製造方法及び半導体装置 |
JP2005116725A (ja) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
I. P. SMORCHKOVA ET AL.: "AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecu", J. APPL. PHYS., vol. 90, no. 10, JPN6010006527, 15 November 2001 (2001-11-15), pages 5196 - 5201, ISSN: 0001564836 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007149791A (ja) * | 2005-11-24 | 2007-06-14 | Univ Meijo | 半導体発光素子および半導体発光素子の作成方法 |
WO2009031858A3 (en) * | 2007-09-06 | 2009-05-14 | Lg Innotek Co Ltd | Semiconductor light emitting device and method of fabricating the same |
US8299493B2 (en) | 2007-09-06 | 2012-10-30 | Lg Innotek Co., Ltd. | Semiconductor light emitting device and method of fabricating the same |
JP2012224539A (ja) * | 2011-04-19 | 2012-11-15 | Samsung Electronics Co Ltd | GaN薄膜構造物、その製造方法、及びそれを含む半導体素子 |
KR101761309B1 (ko) * | 2011-04-19 | 2017-07-25 | 삼성전자주식회사 | GaN 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
JP2013069900A (ja) * | 2011-09-22 | 2013-04-18 | Nichia Chem Ind Ltd | 発光素子 |
JP2018534781A (ja) * | 2015-11-09 | 2018-11-22 | エルジー イノテック カンパニー リミテッド | 紫外線発光素子及び発光素子パッケージ |
US10971648B2 (en) | 2015-11-09 | 2021-04-06 | Lg Innotek Co., Ltd. | Ultraviolet light-emitting element and light-emitting element package |
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JP5014671B2 (ja) | 2012-08-29 |
US7479661B2 (en) | 2009-01-20 |
KR100638818B1 (ko) | 2006-10-27 |
US20060261367A1 (en) | 2006-11-23 |
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