JP5014671B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP5014671B2 JP5014671B2 JP2006137673A JP2006137673A JP5014671B2 JP 5014671 B2 JP5014671 B2 JP 5014671B2 JP 2006137673 A JP2006137673 A JP 2006137673A JP 2006137673 A JP2006137673 A JP 2006137673A JP 5014671 B2 JP5014671 B2 JP 5014671B2
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- layer
- nitride semiconductor
- light emitting
- emitting device
- semiconductor light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
22 バッファー層
23 AlドープされたGaN層 (AlドープGaN層)
24a、24b n型GaN層
25 AlN層
26 AlGaN層
27 活性層
28 p型GaN層
29a n側電極
29b p側電極
Claims (12)
- 基板上に形成されたn型及びp型窒化物半導体層とその間に形成された活性層を含む窒化物発光素子において、
前記n型窒化物半導体層は、前記活性層から遠い順に位置した第1及び第2のn型GaN層を含み、
前記第1及び第2のn型GaN層との間に位置して各界面において2次元電子ガス層を形成し、約100〜500Åの厚さを有するAlx Ga1-xN(0<x<1)層と、
前記Alx Ga1-xN(0<x<1)層と前記第1または第2のn型GaN層との間に配置され、前記Alx Ga1-xN(0<x<1)層より大きいバンドギャップエネルギーを有するAlN層をさらに含むことを特徴とする窒化物半導体発光素子。 - 前記Al x Ga 1-x N(0<x<1)層のxの範囲は、約0.05〜0.5であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記Al x Ga 1-x N(0<x<1)層は、故意的に不純物がドープされていないアンドープ層であることを特徴とする請求項1又は2に記載の窒化物半導体発光素子。
- 前記AlN層は、約5〜30Åの厚さを有することを特徴とする請求項1〜3のいずれか一項に記載の窒化物半導体発光素子。
- 前記基板と前記第1のn型GaN層との間にAlが1%未満にドープされたGaN層をさらに含むことを特徴とする請求項1〜4のいずれか一項に記載の窒化物半導体発光素子。
- 前記窒化物半導体発光素子は、前記n型窒化物層の一部領域が露出されるようにメサエッチングされたことを特徴とする請求項1〜5のいずれか一項に記載の窒化物半導体発光素子。
- 前記メサエッチングされたn型窒化物半導体層の露出面は、前記2次元電子ガス層が設けられる前記第1のn型GaN層の界面とほぼ同一な平面を成すように形成されたことを特徴とする請求項6に記載の窒化物半導体発光素子。
- 前記メサエッチングされたn型窒化物半導体層の露出面は、前記2次元電子ガス層が設けられる前記第1のn型GaN層の界面より低く位置するように形成されたことを特徴とする請求項6又は7に記載の窒化物半導体発光素子。
- 前記第1のn型GaN層と前記Al x Ga 1-x N(0<x<1)層との間に形成され、故意的に不純物がドープされていない高抵抗GaN層をさらに含み、2次元電子ガス層が前記高抵抗GaN層界面で形成されることを特徴とする請求項1〜8のいずれか一項に記載の窒化物半導体発光素子。
- 前記窒化物半導体発光素子は、前記n型窒化物層の一部領域が露出されるようメサエッチングされ、前記高抵抗GaN層は、前記メサエッチングされたn型窒化物半導体層の露出面として提供されることを特徴とする請求項9に記載の窒化物半導体発光素子。
- 前記高抵抗GaN層は、80〜200Åの厚さを有することを特徴とする請求項9又は10に記載の窒化物半導体発光素子。
- 前記基板は、伝導性基板であり、前記窒化物半導体発光素子は、対向する両面に電極が備えられる垂直構造であることを特徴とする請求項1〜11のいずれか一項に記載の窒化物半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0042090 | 2005-05-19 | ||
KR1020050042090A KR100638818B1 (ko) | 2005-05-19 | 2005-05-19 | 질화물 반도체 발광소자 |
Publications (2)
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JP2006324669A JP2006324669A (ja) | 2006-11-30 |
JP5014671B2 true JP5014671B2 (ja) | 2012-08-29 |
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JP2006137673A Active JP5014671B2 (ja) | 2005-05-19 | 2006-05-17 | 窒化物半導体発光素子 |
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US (1) | US7479661B2 (ja) |
JP (1) | JP5014671B2 (ja) |
KR (1) | KR100638818B1 (ja) |
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CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电(江西)有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
JP2007149791A (ja) * | 2005-11-24 | 2007-06-14 | Univ Meijo | 半導体発光素子および半導体発光素子の作成方法 |
US9082892B2 (en) * | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
KR101459754B1 (ko) * | 2007-09-06 | 2014-11-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP4833383B2 (ja) | 2010-01-06 | 2011-12-07 | パナソニック株式会社 | 窒化物系半導体発光素子およびその製造方法 |
KR101754900B1 (ko) * | 2010-04-09 | 2017-07-06 | 엘지이노텍 주식회사 | 발광 소자 |
KR101761309B1 (ko) * | 2011-04-19 | 2017-07-25 | 삼성전자주식회사 | GaN 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
KR20130008295A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 질화물 발광소자 |
JP5741350B2 (ja) * | 2011-09-22 | 2015-07-01 | 日亜化学工業株式会社 | 発光素子 |
KR101961798B1 (ko) * | 2011-12-27 | 2019-03-25 | 엘지이노텍 주식회사 | 발광 소자 |
FR3001335A1 (fr) * | 2013-01-22 | 2014-07-25 | Commissariat Energie Atomique | Structure semiconductrice et procede de fabrication d'une structure semiconductrice |
KR102059033B1 (ko) * | 2013-02-04 | 2019-12-24 | 엘지이노텍 주식회사 | 발광소자 |
KR102432015B1 (ko) | 2015-11-09 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 자외선 발광소자 및 발광소자 패키지 |
KR101772815B1 (ko) * | 2016-04-25 | 2017-08-29 | 고려대학교 산학협력단 | 고효율 Ga-polar 수직 발광 다이오드 소자 및 그 제조방법 |
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US5903017A (en) * | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP3441329B2 (ja) * | 1996-02-26 | 2003-09-02 | 株式会社東芝 | 窒化ガリウム系半導体素子 |
JP3772801B2 (ja) * | 1996-11-05 | 2006-05-10 | 日亜化学工業株式会社 | 発光ダイオード |
JP3744211B2 (ja) * | 1997-09-01 | 2006-02-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JPH11261106A (ja) * | 1998-03-12 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JP2000031591A (ja) * | 1998-07-08 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
JP4629178B2 (ja) * | 1998-10-06 | 2011-02-09 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP4530234B2 (ja) * | 1998-10-09 | 2010-08-25 | シャープ株式会社 | 半導体発光素子 |
JP2001015452A (ja) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 化合物半導体装置及びその製造方法 |
JP3469847B2 (ja) * | 2000-03-24 | 2003-11-25 | 三洋電機株式会社 | 窒化物系半導体素子およびその製造方法 |
JP2001274376A (ja) | 2000-03-24 | 2001-10-05 | Furukawa Electric Co Ltd:The | 低抵抗GaN系緩衝層 |
JP2001274378A (ja) | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 半導体装置 |
JP2001352101A (ja) * | 2000-06-06 | 2001-12-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2003086903A (ja) * | 2001-09-07 | 2003-03-20 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003086784A (ja) * | 2001-09-13 | 2003-03-20 | Furukawa Electric Co Ltd:The | GaN系半導体装置 |
US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
JP4325232B2 (ja) * | 2003-03-18 | 2009-09-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP4635418B2 (ja) * | 2003-07-31 | 2011-02-23 | 日亜化学工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP2005116725A (ja) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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- 2005-05-19 KR KR1020050042090A patent/KR100638818B1/ko active IP Right Grant
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2006
- 2006-05-17 JP JP2006137673A patent/JP5014671B2/ja active Active
- 2006-05-18 US US11/435,751 patent/US7479661B2/en active Active
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JP2006324669A (ja) | 2006-11-30 |
US20060261367A1 (en) | 2006-11-23 |
KR100638818B1 (ko) | 2006-10-27 |
US7479661B2 (en) | 2009-01-20 |
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