JP2006310736A - ゲート絶縁膜の製造方法および半導体装置の製造方法 - Google Patents

ゲート絶縁膜の製造方法および半導体装置の製造方法 Download PDF

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Publication number
JP2006310736A
JP2006310736A JP2005292346A JP2005292346A JP2006310736A JP 2006310736 A JP2006310736 A JP 2006310736A JP 2005292346 A JP2005292346 A JP 2005292346A JP 2005292346 A JP2005292346 A JP 2005292346A JP 2006310736 A JP2006310736 A JP 2006310736A
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Japan
Prior art keywords
plasma
gate insulating
insulating film
processing
gas
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JP2005292346A
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English (en)
Japanese (ja)
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JP2006310736A5 (https=
Inventor
Tatsuo Nishida
辰夫 西田
Toshio Nakanishi
敏雄 中西
Shuichi Ishizuka
修一 石塚
Tomoe Nakayama
友絵 中山
Yutaka Fujino
豊 藤野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005292346A priority Critical patent/JP2006310736A/ja
Priority to KR1020077022436A priority patent/KR100966927B1/ko
Priority to US11/910,332 priority patent/US20090239364A1/en
Priority to PCT/JP2006/306288 priority patent/WO2006106667A1/ja
Priority to CN2006800105952A priority patent/CN101151721B/zh
Priority to TW095111268A priority patent/TWI402912B/zh
Publication of JP2006310736A publication Critical patent/JP2006310736A/ja
Publication of JP2006310736A5 publication Critical patent/JP2006310736A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005292346A 2005-03-30 2005-10-05 ゲート絶縁膜の製造方法および半導体装置の製造方法 Pending JP2006310736A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005292346A JP2006310736A (ja) 2005-03-30 2005-10-05 ゲート絶縁膜の製造方法および半導体装置の製造方法
KR1020077022436A KR100966927B1 (ko) 2005-03-30 2006-03-28 절연막의 제조 방법 및 반도체 장치의 제조 방법
US11/910,332 US20090239364A1 (en) 2005-03-30 2006-03-28 Method for forming insulating film and method for manufacturing semiconductor device
PCT/JP2006/306288 WO2006106667A1 (ja) 2005-03-30 2006-03-28 絶縁膜の製造方法および半導体装置の製造方法
CN2006800105952A CN101151721B (zh) 2005-03-30 2006-03-28 绝缘膜的制造方法和等离子体处理装置
TW095111268A TWI402912B (zh) 2005-03-30 2006-03-30 Manufacturing method of insulating film and manufacturing method of semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005099408 2005-03-30
JP2005292346A JP2006310736A (ja) 2005-03-30 2005-10-05 ゲート絶縁膜の製造方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006310736A true JP2006310736A (ja) 2006-11-09
JP2006310736A5 JP2006310736A5 (https=) 2008-11-13

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Family Applications (1)

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JP2005292346A Pending JP2006310736A (ja) 2005-03-30 2005-10-05 ゲート絶縁膜の製造方法および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US20090239364A1 (https=)
JP (1) JP2006310736A (https=)
KR (1) KR100966927B1 (https=)
CN (1) CN101151721B (https=)
TW (1) TWI402912B (https=)
WO (1) WO2006106667A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070919A (ja) * 2007-09-11 2009-04-02 Tokyo Electron Ltd プラズマ酸化処理方法およびシリコン酸化膜の形成方法
JP2013537716A (ja) * 2010-08-04 2013-10-03 日本テキサス・インスツルメンツ株式会社 その側壁での窒素濃度が高められたＳｉＯＮゲート誘電体を含むＭＯＳトランジスタ
KR20220016788A (ko) * 2020-08-02 2022-02-10 어플라이드 머티어리얼스, 인코포레이티드 게이트 올 어라운드 나노시트 i/o 디바이스에 대한 등각 산화

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP4902716B2 (ja) * 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法
JP5692794B2 (ja) * 2010-03-17 2015-04-01 独立行政法人産業技術総合研究所 透明導電性炭素膜の製造方法
JP5839804B2 (ja) * 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
JP6046128B2 (ja) * 2011-05-31 2016-12-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
KR101817131B1 (ko) 2012-03-19 2018-01-11 에스케이하이닉스 주식회사 게이트절연층 형성 방법 및 반도체장치 제조 방법
WO2018052476A1 (en) * 2016-09-14 2018-03-22 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
CN108807139A (zh) * 2017-05-05 2018-11-13 上海新昇半导体科技有限公司 氧化硅生长系统、方法及半导体测试结构的制作方法
CN109545687B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体氧化的凹槽mosfet器件制造方法
CN109494147B (zh) 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002058130A1 (en) * 2001-01-22 2002-07-25 Tokyo Electron Limited Method for producing material of electronic device
JP2003124204A (ja) * 2001-10-18 2003-04-25 Toshiba Corp プラズマ処理装置及びこれを用いた半導体装置の製造方法
WO2004047157A1 (ja) * 2002-11-20 2004-06-03 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10265948A (ja) * 1997-03-25 1998-10-06 Rohm Co Ltd 半導体装置用基板およびその製法
JP2002058130A (ja) * 2000-08-07 2002-02-22 Sumitomo Wiring Syst Ltd 電気接続箱
US7517751B2 (en) * 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
WO2004070816A1 (ja) * 2003-02-06 2004-08-19 Tokyo Electron Limited プラズマ処理方法，半導体基板及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002058130A1 (en) * 2001-01-22 2002-07-25 Tokyo Electron Limited Method for producing material of electronic device
JP2003124204A (ja) * 2001-10-18 2003-04-25 Toshiba Corp プラズマ処理装置及びこれを用いた半導体装置の製造方法
WO2004047157A1 (ja) * 2002-11-20 2004-06-03 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070919A (ja) * 2007-09-11 2009-04-02 Tokyo Electron Ltd プラズマ酸化処理方法およびシリコン酸化膜の形成方法
JP2013537716A (ja) * 2010-08-04 2013-10-03 日本テキサス・インスツルメンツ株式会社 その側壁での窒素濃度が高められたＳｉＯＮゲート誘電体を含むＭＯＳトランジスタ
KR20220016788A (ko) * 2020-08-02 2022-02-10 어플라이드 머티어리얼스, 인코포레이티드 게이트 올 어라운드 나노시트 i/o 디바이스에 대한 등각 산화
JP2023536856A (ja) * 2020-08-02 2023-08-30 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドナノシート入出力デバイスのためのコンフォーマル酸化
US12243941B2 (en) 2020-08-02 2025-03-04 Applied Materials, Inc. Conformal oxidation for gate all around nanosheet I/O device
JP7678082B2 (ja) 2020-08-02 2025-05-15 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドナノシート入出力デバイスのためのコンフォーマル酸化
KR102865228B1 (ko) 2020-08-02 2025-09-26 어플라이드 머티어리얼스, 인코포레이티드 게이트 올 어라운드 나노시트 i/o 디바이스에 대한 등각 산화

Also Published As

Publication number Publication date
WO2006106667A1 (ja) 2006-10-12
TW200703505A (en) 2007-01-16
CN101151721B (zh) 2011-11-16
KR100966927B1 (ko) 2010-06-29
CN101151721A (zh) 2008-03-26
KR20070112830A (ko) 2007-11-27
TWI402912B (zh) 2013-07-21
US20090239364A1 (en) 2009-09-24

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