JP2006253395A5 - - Google Patents

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Publication number
JP2006253395A5
JP2006253395A5 JP2005067535A JP2005067535A JP2006253395A5 JP 2006253395 A5 JP2006253395 A5 JP 2006253395A5 JP 2005067535 A JP2005067535 A JP 2005067535A JP 2005067535 A JP2005067535 A JP 2005067535A JP 2006253395 A5 JP2006253395 A5 JP 2006253395A5
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JP
Japan
Prior art keywords
film
opening
forming
electrode
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005067535A
Other languages
English (en)
Japanese (ja)
Other versions
JP4282625B2 (ja
JP2006253395A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005067535A priority Critical patent/JP4282625B2/ja
Priority claimed from JP2005067535A external-priority patent/JP4282625B2/ja
Priority to US11/338,715 priority patent/US7696531B2/en
Publication of JP2006253395A publication Critical patent/JP2006253395A/ja
Publication of JP2006253395A5 publication Critical patent/JP2006253395A5/ja
Application granted granted Critical
Publication of JP4282625B2 publication Critical patent/JP4282625B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005067535A 2005-03-10 2005-03-10 半導体装置及びその製造方法 Expired - Fee Related JP4282625B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005067535A JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法
US11/338,715 US7696531B2 (en) 2005-03-10 2006-01-25 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005067535A JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006253395A JP2006253395A (ja) 2006-09-21
JP2006253395A5 true JP2006253395A5 (enExample) 2007-02-15
JP4282625B2 JP4282625B2 (ja) 2009-06-24

Family

ID=36969916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005067535A Expired - Fee Related JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US7696531B2 (enExample)
JP (1) JP4282625B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US9519095B2 (en) 2013-01-30 2016-12-13 Cree, Inc. Optical waveguides
US9625638B2 (en) 2013-03-15 2017-04-18 Cree, Inc. Optical waveguide body
US9442243B2 (en) 2013-01-30 2016-09-13 Cree, Inc. Waveguide bodies including redirection features and methods of producing same
US9366396B2 (en) 2013-01-30 2016-06-14 Cree, Inc. Optical waveguide and lamp including same
US9291320B2 (en) 2013-01-30 2016-03-22 Cree, Inc. Consolidated troffer
US9869432B2 (en) 2013-01-30 2018-01-16 Cree, Inc. Luminaires using waveguide bodies and optical elements
US10379278B2 (en) * 2013-03-15 2019-08-13 Ideal Industries Lighting Llc Outdoor and/or enclosed structure LED luminaire outdoor and/or enclosed structure LED luminaire having outward illumination
US10209429B2 (en) 2013-03-15 2019-02-19 Cree, Inc. Luminaire with selectable luminous intensity pattern
US10502899B2 (en) * 2013-03-15 2019-12-10 Ideal Industries Lighting Llc Outdoor and/or enclosed structure LED luminaire
US9366799B2 (en) 2013-03-15 2016-06-14 Cree, Inc. Optical waveguide bodies and luminaires utilizing same
US9798072B2 (en) 2013-03-15 2017-10-24 Cree, Inc. Optical element and method of forming an optical element
US9651740B2 (en) 2014-01-09 2017-05-16 Cree, Inc. Extraction film for optical waveguide and method of producing same
US10416377B2 (en) 2016-05-06 2019-09-17 Cree, Inc. Luminaire with controllable light emission
US11719882B2 (en) 2016-05-06 2023-08-08 Ideal Industries Lighting Llc Waveguide-based light sources with dynamic beam shaping

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335536A (ja) * 1989-06-30 1991-02-15 Fujitsu Ltd 電界効果型半導体装置
JPH04163924A (ja) * 1990-10-29 1992-06-09 Sony Corp 電界効果トランジスタ
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
US5273933A (en) * 1991-07-23 1993-12-28 Kabushiki Kaisha Toshiba Vapor phase growth method of forming film in process of manufacturing semiconductor device
JPH05152338A (ja) * 1991-11-28 1993-06-18 Sanyo Electric Co Ltd 化合物半導体装置
JPH09289304A (ja) * 1996-04-19 1997-11-04 Rohm Co Ltd 半導体装置
JP3035215B2 (ja) * 1996-05-23 2000-04-24 ローム株式会社 半導体装置
JP3353764B2 (ja) 1999-11-12 2002-12-03 日本電気株式会社 半導体装置の製造方法
JP2001230263A (ja) * 2001-01-29 2001-08-24 Nec Corp 電界効果型トランジスタ
JP3600544B2 (ja) * 2001-03-30 2004-12-15 ユーディナデバイス株式会社 半導体装置の製造方法
JP3744381B2 (ja) * 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ

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