JP4282625B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4282625B2
JP4282625B2 JP2005067535A JP2005067535A JP4282625B2 JP 4282625 B2 JP4282625 B2 JP 4282625B2 JP 2005067535 A JP2005067535 A JP 2005067535A JP 2005067535 A JP2005067535 A JP 2005067535A JP 4282625 B2 JP4282625 B2 JP 4282625B2
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JP
Japan
Prior art keywords
electrode
gate electrode
film
opening
forming
Prior art date
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Expired - Fee Related
Application number
JP2005067535A
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English (en)
Japanese (ja)
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JP2006253395A5 (enExample
JP2006253395A (ja
Inventor
明男 宮尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2005067535A priority Critical patent/JP4282625B2/ja
Priority to US11/338,715 priority patent/US7696531B2/en
Publication of JP2006253395A publication Critical patent/JP2006253395A/ja
Publication of JP2006253395A5 publication Critical patent/JP2006253395A5/ja
Application granted granted Critical
Publication of JP4282625B2 publication Critical patent/JP4282625B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005067535A 2005-03-10 2005-03-10 半導体装置及びその製造方法 Expired - Fee Related JP4282625B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005067535A JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法
US11/338,715 US7696531B2 (en) 2005-03-10 2006-01-25 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005067535A JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006253395A JP2006253395A (ja) 2006-09-21
JP2006253395A5 JP2006253395A5 (enExample) 2007-02-15
JP4282625B2 true JP4282625B2 (ja) 2009-06-24

Family

ID=36969916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005067535A Expired - Fee Related JP4282625B2 (ja) 2005-03-10 2005-03-10 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US7696531B2 (enExample)
JP (1) JP4282625B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US9366396B2 (en) 2013-01-30 2016-06-14 Cree, Inc. Optical waveguide and lamp including same
US9869432B2 (en) 2013-01-30 2018-01-16 Cree, Inc. Luminaires using waveguide bodies and optical elements
US9625638B2 (en) 2013-03-15 2017-04-18 Cree, Inc. Optical waveguide body
US9291320B2 (en) 2013-01-30 2016-03-22 Cree, Inc. Consolidated troffer
US9442243B2 (en) 2013-01-30 2016-09-13 Cree, Inc. Waveguide bodies including redirection features and methods of producing same
US10436969B2 (en) 2013-01-30 2019-10-08 Ideal Industries Lighting Llc Optical waveguide and luminaire incorporating same
US9798072B2 (en) 2013-03-15 2017-10-24 Cree, Inc. Optical element and method of forming an optical element
US10502899B2 (en) * 2013-03-15 2019-12-10 Ideal Industries Lighting Llc Outdoor and/or enclosed structure LED luminaire
US10209429B2 (en) 2013-03-15 2019-02-19 Cree, Inc. Luminaire with selectable luminous intensity pattern
US9366799B2 (en) 2013-03-15 2016-06-14 Cree, Inc. Optical waveguide bodies and luminaires utilizing same
US10379278B2 (en) * 2013-03-15 2019-08-13 Ideal Industries Lighting Llc Outdoor and/or enclosed structure LED luminaire outdoor and/or enclosed structure LED luminaire having outward illumination
US9651740B2 (en) 2014-01-09 2017-05-16 Cree, Inc. Extraction film for optical waveguide and method of producing same
US10416377B2 (en) 2016-05-06 2019-09-17 Cree, Inc. Luminaire with controllable light emission
US11719882B2 (en) 2016-05-06 2023-08-08 Ideal Industries Lighting Llc Waveguide-based light sources with dynamic beam shaping

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335536A (ja) * 1989-06-30 1991-02-15 Fujitsu Ltd 電界効果型半導体装置
JPH04163924A (ja) * 1990-10-29 1992-06-09 Sony Corp 電界効果トランジスタ
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
US5273933A (en) * 1991-07-23 1993-12-28 Kabushiki Kaisha Toshiba Vapor phase growth method of forming film in process of manufacturing semiconductor device
JPH05152338A (ja) * 1991-11-28 1993-06-18 Sanyo Electric Co Ltd 化合物半導体装置
JPH09289304A (ja) * 1996-04-19 1997-11-04 Rohm Co Ltd 半導体装置
JP3035215B2 (ja) * 1996-05-23 2000-04-24 ローム株式会社 半導体装置
JP3353764B2 (ja) 1999-11-12 2002-12-03 日本電気株式会社 半導体装置の製造方法
JP2001230263A (ja) * 2001-01-29 2001-08-24 Nec Corp 電界効果型トランジスタ
JP3600544B2 (ja) * 2001-03-30 2004-12-15 ユーディナデバイス株式会社 半導体装置の製造方法
JP3744381B2 (ja) * 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ

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Publication number Publication date
US20060202246A1 (en) 2006-09-14
US7696531B2 (en) 2010-04-13
JP2006253395A (ja) 2006-09-21

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