JP2006237254A5 - - Google Patents

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Publication number
JP2006237254A5
JP2006237254A5 JP2005049416A JP2005049416A JP2006237254A5 JP 2006237254 A5 JP2006237254 A5 JP 2006237254A5 JP 2005049416 A JP2005049416 A JP 2005049416A JP 2005049416 A JP2005049416 A JP 2005049416A JP 2006237254 A5 JP2006237254 A5 JP 2006237254A5
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JP
Japan
Prior art keywords
semiconductor
layer
additive
semiconductor layer
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005049416A
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English (en)
Japanese (ja)
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JP2006237254A (ja
JP4645225B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2005049416A priority Critical patent/JP4645225B2/ja
Priority claimed from JP2005049416A external-priority patent/JP4645225B2/ja
Publication of JP2006237254A publication Critical patent/JP2006237254A/ja
Publication of JP2006237254A5 publication Critical patent/JP2006237254A5/ja
Application granted granted Critical
Publication of JP4645225B2 publication Critical patent/JP4645225B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005049416A 2005-02-24 2005-02-24 半導体素子の製造方法 Expired - Lifetime JP4645225B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005049416A JP4645225B2 (ja) 2005-02-24 2005-02-24 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005049416A JP4645225B2 (ja) 2005-02-24 2005-02-24 半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2006237254A JP2006237254A (ja) 2006-09-07
JP2006237254A5 true JP2006237254A5 (enExample) 2007-09-13
JP4645225B2 JP4645225B2 (ja) 2011-03-09

Family

ID=37044582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005049416A Expired - Lifetime JP4645225B2 (ja) 2005-02-24 2005-02-24 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JP4645225B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101164026B1 (ko) 2007-07-12 2012-07-18 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR101459754B1 (ko) * 2007-09-06 2014-11-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
WO2009039402A1 (en) * 2007-09-19 2009-03-26 The Regents Of The University Of California (al,in,ga,b)n device structures on a patterned substrate
US8258531B2 (en) * 2010-03-26 2012-09-04 Huga Optotech Inc. Semiconductor devices
CN102097560B (zh) * 2010-12-31 2012-11-14 厦门市三安光电科技有限公司 具有复合式双电流扩展层的氮化物发光二极管
JP2013183126A (ja) * 2012-03-05 2013-09-12 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3063756B1 (ja) * 1998-10-06 2000-07-12 日亜化学工業株式会社 窒化物半導体素子
JP3551101B2 (ja) * 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
JP2001237456A (ja) * 2000-02-21 2001-08-31 Nichia Chem Ind Ltd 発光素子
JP2004047867A (ja) * 2002-07-15 2004-02-12 Sony Corp 窒化物系半導体発光素子の製造方法
JP2004356442A (ja) * 2003-05-29 2004-12-16 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子

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