JP2006210815A - 半導体素子およびインクジェット記録ヘッド用基板とそれらの製造方法 - Google Patents
半導体素子およびインクジェット記録ヘッド用基板とそれらの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 238000005520 cutting process Methods 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 41
- 239000003566 sealing material Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 17
- 239000010931 gold Substances 0.000 abstract description 17
- 229910052737 gold Inorganic materials 0.000 abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000009713 electroplating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 21
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 239000004020 conductor Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】 シリコン基板1上に、絶縁層間膜2、発熱抵抗体3、アルミニウム配線層4、絶縁層間膜5、保護膜6、密着向上層7が形成され、さらに、切断ラインをまたいで設けられた溝の内面に、電解めっきにより金めっき層が形成されている。インク吐出口13とインク流路14を有する有機膜12が形成されている。金めっき層が接続用電極10を構成しており、半導体素子の切断端面と同一面の位置または当該切断端面よりも内側に入り込んだ位置に設けられて、外部に露出している。この接続用電極10に、例えばTABリード16などの外部導電部材が接続される。
【選択図】 図1
Description
図1には、本発明の第1の実施形態の半導体素子20の要部が示されている。これらの半導体素子20は、1枚のウエハに複数個形成された後にウエハを切断することによって得られたものであり、インクジェット記録ヘッド用基板を構成している。そして、この半導体素子20の端面の一部に電気接続部(接続用電極)10が設けられている。接続用電極10は、この半導体素子20の最外面と同一面の位置、または当該最外面よりも内側に位置するように形成されている。なお、1枚のウエハから複数個の半導体素子20を得る場合には、半導体素子20の最外面は切断端面と実質的に同じである。そして、本実施形態では、この半導体素子20の接続用電極10に、外部の電気導電部材、例えばフレキシブルプリント基板やTAB(Tape Automated Bonding)リード16等が接続される。
図15に示す本発明の第2の実施形態は、接続用電極10が封止材17によって保護された構成である。それ以外の構成は第1の実施形態と実質的に同一であるので、同一の符号を付与し説明を省略する。
図20に示す本発明の第3の実施形態は、半導体素子23が、互いに接合される複数の半導体チップ23aによって構成されている。これらの半導体チップ23aは、互いに嵌め合わされることによって機械的接合と電気的接続とを同時に達成する凹凸部18を有しているものである。図20(a)には、本実施形態の2つの半導体チップ23aの要部が示され、図20(b)にはこれらが接合された半導体素子23が示されている。図20,23は、図22,25,26のD−D線の位置で断面した図である。
3 発熱抵抗体(エネルギー発生手段)
4 アルミニウム配線層
10 金めっき層(接続用電極)
11 有機膜
12 有機膜
12a インク吐出口が設けられた面
13 インク吐出口
14 インク流路
16 TABリード(外部導電部材)
17 封止材
18 凹凸部
20,23 半導体素子
21 溝
22 段差部
23a 半導体チップ
Claims (21)
- シリコン基板を基材として作り込まれた半導体素子において、
前記半導体素子を外部と電気的に接続するための接続用電極を有し、該接続用電極は、前記半導体素子の最外面と同一面の位置または当該最外面よりも内側に入り込んだ位置に設けられて外部に露出していることを特徴とする半導体素子。 - シリコン基板を基材として作り込まれた複数の半導体チップからなり、
前記各半導体チップは、凹凸部と、前記凹凸部の端面に設けられており前記半導体チップを外部と電気的に接続する接続用電極とを有しており、
複数の前記半導体チップの前記凹凸部同士が互いに嵌め合わされることによって、機械的に接合されるとともに、前記接続用電極同士が接触して電気的に接続されている半導体素子。 - 前記接続用電極は、前記半導体チップの最外面と同一面の位置または当該最外面よりも内側に入り込んだ位置に設けられて外部に露出している、請求項2に記載の半導体素子。
- 前記最外面は、前記シリコン基板が切断された時の切断端面である、請求項1〜3のいずれか1項に記載の半導体素子。
- 請求項1〜4のいずれか1項に記載の半導体素子の前記シリコン基板に、インクの吐出エネルギーを発生するエネルギー発生手段と、前記エネルギー発生手段と前記接続用電極とを接続する配線層と、前記エネルギー発生手段に対応して配置されているインク吐出口およびインク流路を形成している有機膜とが設けられている、インクジェット記録ヘッド用基板。
- 前記接続用電極に接続される外部導電部材と、前記接続用電極と前記外部導電部材の接続部を覆う封止材をさらに有し、
前記封止材は、前記インク吐出口が設けられている面と同一面の位置または当該インク吐出口が設けられている面よりも内側に入り込んだ位置に設けられている、請求項5に記載のインクジェット記録ヘッド用基板。 - 請求項5または6に記載のインクジェット記録ヘッド用基板を有するインクジェット記録ヘッド。
- シリコン基板を所定の位置で切断することによって1枚の前記シリコン基板から複数の半導体素子を得る、前記シリコン基板を基材として作り込まれた半導体素子の製造方法において、
前記半導体素子を外部と電気的に接続する接続用電極を、前記半導体素子の最外面である前記シリコン基板の切断端面と同一面の位置または当該切断端面よりも内側に入り込んだ位置に設けて外部に露出させる工程を含むことを特徴とする半導体素子の製造方法。 - シリコン基板を所定の位置で切断することによって1枚の前記シリコン基板から得られた、前記シリコン基板を基材として作り込まれた複数の半導体チップからなる半導体素子の製造方法において、
前記各半導体チップに凹凸部を形成する工程と、
前記凹凸部の端面に、前記半導体チップを外部と電気的に接続する接続用電極を形成する工程とを含むことを特徴とする半導体素子の製造方法。 - 複数の前記半導体チップの前記凹凸部同士を互いに嵌め合わせることによって機械的接合と電気的接続とを同時に行う工程とをさらに含む、請求項9に記載の半導体素子の製造方法。
- 前記接続用電極を、前記半導体チップの最外面である前記シリコン基板の切断端面と同一面の位置または当該最外面よりも内側に入り込んだ位置に設けて外部に露出させる工程をさらに含む、請求項9または10に記載の半導体素子の製造方法。
- 請求項8〜11のいずれか1項に記載の半導体素子の製造方法の各工程と、
前記シリコン基板に、インクの吐出エネルギーを発生するエネルギー発生手段と、前記エネルギー発生手段と前記接続用電極とを接続する配線層と、前記エネルギー発生手段に対応して配置されるインク吐出口およびインク流路を形成する有機膜とを設ける工程とを含む、インクジェット記録ヘッド用基板の製造方法。 - 前記接続用電極に外部導電部材を接続する工程と、前記接続用電極と前記外部導電部材の接続部を覆う封止材を設ける工程とをさらに有し、
前記封止材を、前記インク吐出口が設けられている面と同一面に位置するように、または前記インク吐出口が設けられている面よりも内側に入り込んだ位置に設ける、請求項12に記載のインクジェット記録ヘッド用基板の製造方法。 - 前記シリコン基板は、単結晶シリコンからなり表面が絶縁性を有しており、前記シリコン基板を切断する際に、前記接続用電極を形成する面を同時に形成する、請求項12または13に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記シリコン基板を切断すべき位置に設けられた溝または貫通穴の内面に形成する、請求項12〜14のいずれか1項に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記シリコン基板を切断すべき切断ラインをまたいで形成し、前記切断ラインにて切断された両側の切断端面に位置させる、請求項15に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を形成する工程は、前記シリコン基板を切断すべき切断ラインをまたぐ領域に金属薄膜を形成する工程と、前記金属薄膜上にレジストを形成してパターニングする工程と、前記レジストの存在しない部分の金属を成長させる工程と、前記レジストと該レジストの下層の前記金属薄膜を除去する工程とからなり、前記切断ラインをまたぐ領域にて成長した金属によって前記接続用電極を構成するものである、請求項15または16に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記シリコン基板上に設けられた前記配線層または絶縁膜上に、めっき法あるいはメタルCVD(Chemical Vapor Deposition)法によって形成する、請求項12〜17のいずれか1項に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記インク吐出口が設けられた面に対して略54度傾いた面に形成する、請求項12〜18のいずれか1項に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記インク吐出口が設けられた面に対して略垂直な面に形成する、請求項12〜18のいずれか1項に記載のインクジェット記録ヘッド用基板の製造方法。
- 前記接続用電極を、前記インク吐出口が設けられた面に対して略垂直な面に設けられた段差部内に形成する、請求項20に記載のインクジェット記録ヘッド用基板の製造方法。
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US8182072B2 (en) | 2007-04-20 | 2012-05-22 | Canon Kabushiki Kaisha | Substrate for inkjet printing head and method for manufacturing the substrate |
JP2014162085A (ja) * | 2013-02-25 | 2014-09-08 | Brother Ind Ltd | 液体吐出装置及びフレキシブル配線基板の接続方法 |
JP2015051600A (ja) * | 2013-09-09 | 2015-03-19 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
JP2017024337A (ja) * | 2015-07-24 | 2017-02-02 | キヤノン株式会社 | 液体吐出ヘッド用基板および液体吐出ヘッド用基板の製造方法 |
JP2020146990A (ja) * | 2019-03-15 | 2020-09-17 | キヤノン株式会社 | 液体吐出ヘッドおよびその製造方法 |
JP7305383B2 (ja) | 2019-03-15 | 2023-07-10 | キヤノン株式会社 | 液体吐出ヘッドおよびその製造方法 |
US12023931B2 (en) | 2020-07-31 | 2024-07-02 | Canon Kabushiki Kaisha | Liquid ejection head and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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KR100865183B1 (ko) | 2008-10-23 |
US20060170734A1 (en) | 2006-08-03 |
US7591071B2 (en) | 2009-09-22 |
JP4630680B2 (ja) | 2011-02-09 |
KR20060088068A (ko) | 2006-08-03 |
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