JP2006210692A - 3族窒化物系化合物半導体発光素子 - Google Patents
3族窒化物系化合物半導体発光素子 Download PDFInfo
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- JP2006210692A JP2006210692A JP2005021445A JP2005021445A JP2006210692A JP 2006210692 A JP2006210692 A JP 2006210692A JP 2005021445 A JP2005021445 A JP 2005021445A JP 2005021445 A JP2005021445 A JP 2005021445A JP 2006210692 A JP2006210692 A JP 2006210692A
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- well layer
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- compound semiconductor
- group iii
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- -1 nitride compound Chemical class 0.000 title claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 230000008859 change Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000005253 cladding Methods 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005021445A JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
| KR1020050126528A KR100752007B1 (ko) | 2005-01-28 | 2005-12-21 | 3족 질화물계 화합물 반도체 발광 소자 및 그 제조 방법 |
| TW094146488A TWI284994B (en) | 2005-01-28 | 2005-12-26 | Group III nitride-based compound semiconductor light-emitting device and method for producing the same |
| CNB2006100027584A CN100403566C (zh) | 2005-01-28 | 2006-01-25 | Ⅲ族氮化物系化合物半导体发光元件及其制造方法 |
| US11/340,746 US7629619B2 (en) | 2005-01-28 | 2006-01-27 | Group III nitride-based compound semiconductor light-emitting device and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005021445A JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006210692A true JP2006210692A (ja) | 2006-08-10 |
| JP2006210692A5 JP2006210692A5 (https=) | 2007-09-27 |
Family
ID=36919092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005021445A Withdrawn JP2006210692A (ja) | 2005-01-28 | 2005-01-28 | 3族窒化物系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006210692A (https=) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010021290A (ja) * | 2008-07-09 | 2010-01-28 | Sumitomo Electric Ind Ltd | 量子井戸構造の製造方法 |
| JP2011151422A (ja) * | 2009-12-10 | 2011-08-04 | Dowa Electronics Materials Co Ltd | p型AlGaN層およびIII族窒化物半導体発光素子 |
| US8247842B2 (en) | 2009-03-26 | 2012-08-21 | Sanken Electric Co., Ltd. | Nitride semiconductor device having graded aluminum content |
| JP2013502058A (ja) * | 2009-08-13 | 2013-01-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電気的にポンピングされるオプトエレクトロニクス半導体チップ |
| JP2019526938A (ja) * | 2016-09-02 | 2019-09-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス素子 |
| JP2021057528A (ja) * | 2019-10-01 | 2021-04-08 | 旭化成株式会社 | 紫外線発光素子 |
| US11955581B2 (en) | 2020-07-09 | 2024-04-09 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor device and production method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1084132A (ja) * | 1996-09-08 | 1998-03-31 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| JPH1126812A (ja) * | 1997-07-01 | 1999-01-29 | Toyoda Gosei Co Ltd | 3族窒化物半導体素子及びその製造方法 |
| JPH1174564A (ja) * | 1997-07-10 | 1999-03-16 | Sharp Corp | Iii族窒化物光電子半導体装置 |
-
2005
- 2005-01-28 JP JP2005021445A patent/JP2006210692A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1084132A (ja) * | 1996-09-08 | 1998-03-31 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| JPH1126812A (ja) * | 1997-07-01 | 1999-01-29 | Toyoda Gosei Co Ltd | 3族窒化物半導体素子及びその製造方法 |
| JPH1174564A (ja) * | 1997-07-10 | 1999-03-16 | Sharp Corp | Iii族窒化物光電子半導体装置 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010021290A (ja) * | 2008-07-09 | 2010-01-28 | Sumitomo Electric Ind Ltd | 量子井戸構造の製造方法 |
| US7955881B2 (en) | 2008-07-09 | 2011-06-07 | Sumitomo Electric Industries, Ltd. | Method of fabricating quantum well structure |
| US8247842B2 (en) | 2009-03-26 | 2012-08-21 | Sanken Electric Co., Ltd. | Nitride semiconductor device having graded aluminum content |
| JP2013502058A (ja) * | 2009-08-13 | 2013-01-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電気的にポンピングされるオプトエレクトロニクス半導体チップ |
| JP2011151422A (ja) * | 2009-12-10 | 2011-08-04 | Dowa Electronics Materials Co Ltd | p型AlGaN層およびIII族窒化物半導体発光素子 |
| JP2019526938A (ja) * | 2016-09-02 | 2019-09-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス素子 |
| US11114584B2 (en) | 2016-09-02 | 2021-09-07 | Osram Oled Gmbh | Optoelectronic component |
| JP6991199B2 (ja) | 2016-09-02 | 2022-01-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス素子 |
| JP2021057528A (ja) * | 2019-10-01 | 2021-04-08 | 旭化成株式会社 | 紫外線発光素子 |
| JP7405554B2 (ja) | 2019-10-01 | 2023-12-26 | 旭化成株式会社 | 紫外線発光素子 |
| US11955581B2 (en) | 2020-07-09 | 2024-04-09 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor device and production method therefor |
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