JP2006134559A5 - - Google Patents

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Publication number
JP2006134559A5
JP2006134559A5 JP2005307418A JP2005307418A JP2006134559A5 JP 2006134559 A5 JP2006134559 A5 JP 2006134559A5 JP 2005307418 A JP2005307418 A JP 2005307418A JP 2005307418 A JP2005307418 A JP 2005307418A JP 2006134559 A5 JP2006134559 A5 JP 2006134559A5
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JP
Japan
Prior art keywords
auto
refresh
memory device
memory
command
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Application number
JP2005307418A
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English (en)
Japanese (ja)
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JP4851156B2 (ja
JP2006134559A (ja
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Priority claimed from KR1020040089950A external-priority patent/KR100634440B1/ko
Application filed filed Critical
Publication of JP2006134559A publication Critical patent/JP2006134559A/ja
Publication of JP2006134559A5 publication Critical patent/JP2006134559A5/ja
Application granted granted Critical
Publication of JP4851156B2 publication Critical patent/JP4851156B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005307418A 2004-11-05 2005-10-21 リフレッシュ方法、メモリシステム、ダイナミックランダムアクセスメモリ装置、メモリシステムの動作方法及びロジックエンベディッドメモリシステム Expired - Fee Related JP4851156B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0089950 2004-11-05
KR1020040089950A KR100634440B1 (ko) 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들

Publications (3)

Publication Number Publication Date
JP2006134559A JP2006134559A (ja) 2006-05-25
JP2006134559A5 true JP2006134559A5 (cg-RX-API-DMAC7.html) 2008-11-27
JP4851156B2 JP4851156B2 (ja) 2012-01-11

Family

ID=36273981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005307418A Expired - Fee Related JP4851156B2 (ja) 2004-11-05 2005-10-21 リフレッシュ方法、メモリシステム、ダイナミックランダムアクセスメモリ装置、メモリシステムの動作方法及びロジックエンベディッドメモリシステム

Country Status (5)

Country Link
US (1) US7327625B2 (cg-RX-API-DMAC7.html)
JP (1) JP4851156B2 (cg-RX-API-DMAC7.html)
KR (1) KR100634440B1 (cg-RX-API-DMAC7.html)
CN (1) CN1779853B (cg-RX-API-DMAC7.html)
DE (1) DE102005053171B4 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053541B1 (ko) 2010-03-30 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치
US8392650B2 (en) * 2010-04-01 2013-03-05 Intel Corporation Fast exit from self-refresh state of a memory device
KR102205695B1 (ko) * 2014-09-05 2021-01-21 에스케이하이닉스 주식회사 리프레쉬 제어 회로 및 이를 이용한 반도체 장치
KR20170045795A (ko) * 2015-10-20 2017-04-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR20180100804A (ko) * 2017-03-02 2018-09-12 에스케이하이닉스 주식회사 반도체 장치 및 그의 구동 방법
KR102398209B1 (ko) 2017-11-06 2022-05-17 삼성전자주식회사 반도체 메모리 장치, 메모리 시스템 그리고 그것의 리프레쉬 방법
US10622055B2 (en) 2018-08-21 2020-04-14 Micron Technology, Inc. Apparatus for supplying power supply voltage to semiconductor chip including volatile memory cell
US20200258566A1 (en) * 2019-02-12 2020-08-13 Micron Technology, Inc. Refresh rate management for memory
KR102856184B1 (ko) * 2020-11-23 2025-09-05 에스케이하이닉스 주식회사 컨트롤러 및 이를 포함하는 메모리 시스템
KR102866253B1 (ko) * 2023-03-13 2025-09-29 성균관대학교산학협력단 프로세싱-인-메모리 제어 장치, 상기 프로세싱-인-메모리 제어 장치를 포함하는 컴퓨팅 장치 및 프로세싱-인-메모리 제어 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166842A (ja) 1997-08-13 1999-03-09 Toshiba Corp 半導体記憶装置
JPH11312386A (ja) * 1998-03-30 1999-11-09 Siemens Ag Ｄｒａｍチップ
US6088268A (en) * 1998-09-17 2000-07-11 Atmel Corporation Flash memory array with internal refresh
JP2000149550A (ja) 1998-11-12 2000-05-30 Nec Eng Ltd 自動リフレッシュ機能付ｄｒａｍ
JP2000260180A (ja) 1999-03-08 2000-09-22 Nec Corp 半導体メモリ
JP2001118383A (ja) 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
US6751143B2 (en) * 2002-04-11 2004-06-15 Micron Technology, Inc. Method and system for low power refresh of dynamic random access memories
JP2004022123A (ja) * 2002-06-19 2004-01-22 Murata Mach Ltd インターフェース回路
US6711082B1 (en) * 2002-11-18 2004-03-23 Infineon Technologies, Ag Method and implementation of an on-chip self refresh feature
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention

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