KR100634440B1 - 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들 - Google Patents

오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들 Download PDF

Info

Publication number
KR100634440B1
KR100634440B1 KR1020040089950A KR20040089950A KR100634440B1 KR 100634440 B1 KR100634440 B1 KR 100634440B1 KR 1020040089950 A KR1020040089950 A KR 1020040089950A KR 20040089950 A KR20040089950 A KR 20040089950A KR 100634440 B1 KR100634440 B1 KR 100634440B1
Authority
KR
South Korea
Prior art keywords
auto
refresh
memory
command
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040089950A
Other languages
English (en)
Korean (ko)
Other versions
KR20060040380A (ko
Inventor
조성규
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040089950A priority Critical patent/KR100634440B1/ko
Priority to US11/194,242 priority patent/US7327625B2/en
Priority to CN2005101067847A priority patent/CN1779853B/zh
Priority to JP2005307418A priority patent/JP4851156B2/ja
Priority to DE102005053171.7A priority patent/DE102005053171B4/de
Publication of KR20060040380A publication Critical patent/KR20060040380A/ko
Application granted granted Critical
Publication of KR100634440B1 publication Critical patent/KR100634440B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
KR1020040089950A 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들 Expired - Fee Related KR100634440B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020040089950A KR100634440B1 (ko) 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들
US11/194,242 US7327625B2 (en) 2004-11-05 2005-08-01 Volatile memory devices with auto-refresh command unit and circuit for controlling auto-refresh operation thereof and related memory systems and operating methods
CN2005101067847A CN1779853B (zh) 2004-11-05 2005-10-12 自动刷新的易失存储器设备及相关存储器系统和操作方法
JP2005307418A JP4851156B2 (ja) 2004-11-05 2005-10-21 リフレッシュ方法、メモリシステム、ダイナミックランダムアクセスメモリ装置、メモリシステムの動作方法及びロジックエンベディッドメモリシステム
DE102005053171.7A DE102005053171B4 (de) 2004-11-05 2005-11-02 Auffrischungsverfahren, Speicher, Speichersystem und Betriebsverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040089950A KR100634440B1 (ko) 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들

Publications (2)

Publication Number Publication Date
KR20060040380A KR20060040380A (ko) 2006-05-10
KR100634440B1 true KR100634440B1 (ko) 2006-10-16

Family

ID=36273981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040089950A Expired - Fee Related KR100634440B1 (ko) 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들

Country Status (5)

Country Link
US (1) US7327625B2 (cg-RX-API-DMAC7.html)
JP (1) JP4851156B2 (cg-RX-API-DMAC7.html)
KR (1) KR100634440B1 (cg-RX-API-DMAC7.html)
CN (1) CN1779853B (cg-RX-API-DMAC7.html)
DE (1) DE102005053171B4 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053541B1 (ko) 2010-03-30 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치
US8392650B2 (en) * 2010-04-01 2013-03-05 Intel Corporation Fast exit from self-refresh state of a memory device
KR102205695B1 (ko) * 2014-09-05 2021-01-21 에스케이하이닉스 주식회사 리프레쉬 제어 회로 및 이를 이용한 반도체 장치
KR20170045795A (ko) * 2015-10-20 2017-04-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR20180100804A (ko) * 2017-03-02 2018-09-12 에스케이하이닉스 주식회사 반도체 장치 및 그의 구동 방법
KR102398209B1 (ko) 2017-11-06 2022-05-17 삼성전자주식회사 반도체 메모리 장치, 메모리 시스템 그리고 그것의 리프레쉬 방법
US10622055B2 (en) 2018-08-21 2020-04-14 Micron Technology, Inc. Apparatus for supplying power supply voltage to semiconductor chip including volatile memory cell
US20200258566A1 (en) * 2019-02-12 2020-08-13 Micron Technology, Inc. Refresh rate management for memory
KR102856184B1 (ko) * 2020-11-23 2025-09-05 에스케이하이닉스 주식회사 컨트롤러 및 이를 포함하는 메모리 시스템
KR102866253B1 (ko) * 2023-03-13 2025-09-29 성균관대학교산학협력단 프로세싱-인-메모리 제어 장치, 상기 프로세싱-인-메모리 제어 장치를 포함하는 컴퓨팅 장치 및 프로세싱-인-메모리 제어 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166842A (ja) 1997-08-13 1999-03-09 Toshiba Corp 半導体記憶装置
JPH11312386A (ja) * 1998-03-30 1999-11-09 Siemens Ag Ｄｒａｍチップ
US6088268A (en) * 1998-09-17 2000-07-11 Atmel Corporation Flash memory array with internal refresh
JP2000149550A (ja) 1998-11-12 2000-05-30 Nec Eng Ltd 自動リフレッシュ機能付ｄｒａｍ
JP2000260180A (ja) 1999-03-08 2000-09-22 Nec Corp 半導体メモリ
JP2001118383A (ja) 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
US6751143B2 (en) * 2002-04-11 2004-06-15 Micron Technology, Inc. Method and system for low power refresh of dynamic random access memories
JP2004022123A (ja) * 2002-06-19 2004-01-22 Murata Mach Ltd インターフェース回路
US6711082B1 (en) * 2002-11-18 2004-03-23 Infineon Technologies, Ag Method and implementation of an on-chip self refresh feature
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention

Also Published As

Publication number Publication date
JP4851156B2 (ja) 2012-01-11
CN1779853B (zh) 2013-04-03
US20060098510A1 (en) 2006-05-11
KR20060040380A (ko) 2006-05-10
CN1779853A (zh) 2006-05-31
US7327625B2 (en) 2008-02-05
DE102005053171B4 (de) 2014-05-15
DE102005053171A1 (de) 2006-05-18
JP2006134559A (ja) 2006-05-25

Similar Documents

Publication Publication Date Title
JP5063041B2 (ja) 向上されたリフレッシュメカニズムを有するダイナミック半導体メモリ
JP2982928B2 (ja) 半導体記憶装置
JP7064633B1 (ja) 半導体メモリ装置
US11417385B1 (en) Semiconductor memory apparatus
KR100634440B1 (ko) 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들
US7894290B2 (en) Method and apparatus for performing internal hidden refreshes while latching read/write commands, address and data information for later operation
JP4894306B2 (ja) 半導体メモリ、メモリシステムおよび半導体メモリの動作方法
US7362643B2 (en) Semiconductor-memory device and bank refresh method
US7145814B2 (en) RAS time control circuit and method for use in DRAM using external clock
US7287142B2 (en) Memory device and method for arbitrating internal and external access
JP2022042635A (ja) 半導体記憶装置
JP4934118B2 (ja) 半導体記憶装置
KR20000066268A (ko) 온도 감응형 셀프 리프레시 회로
JP4561089B2 (ja) 記憶装置
KR102524199B1 (ko) 반도체 메모리 장치
US6144605A (en) Refresh circuit for SDRAM
JP2005174437A5 (cg-RX-API-DMAC7.html)
KR100802075B1 (ko) 반도체 메모리 장치
KR20060045683A (ko) Ｐｓｒａｍ의 로우 액티브 제어회로
KR100433535B1 (ko) Ｓｄｒａｍ의 제어 방법
JP3087691B2 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20120925

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130930

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20141001

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20151001

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20160930

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20180927

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20191010

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20191010