CN1779853B - 自动刷新的易失存储器设备及相关存储器系统和操作方法 - Google Patents

自动刷新的易失存储器设备及相关存储器系统和操作方法 Download PDF

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Publication number
CN1779853B
CN1779853B CN2005101067847A CN200510106784A CN1779853B CN 1779853 B CN1779853 B CN 1779853B CN 2005101067847 A CN2005101067847 A CN 2005101067847A CN 200510106784 A CN200510106784 A CN 200510106784A CN 1779853 B CN1779853 B CN 1779853B
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CN
China
Prior art keywords
auto
refresh
memory device
command
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2005101067847A
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English (en)
Chinese (zh)
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CN1779853A (zh
Inventor
曹成奎
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1779853A publication Critical patent/CN1779853A/zh
Application granted granted Critical
Publication of CN1779853B publication Critical patent/CN1779853B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
CN2005101067847A 2004-11-05 2005-10-12 自动刷新的易失存储器设备及相关存储器系统和操作方法 Expired - Lifetime CN1779853B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR89950/04 2004-11-05
KR1020040089950A KR100634440B1 (ko) 2004-11-05 2004-11-05 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들

Publications (2)

Publication Number Publication Date
CN1779853A CN1779853A (zh) 2006-05-31
CN1779853B true CN1779853B (zh) 2013-04-03

Family

ID=36273981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005101067847A Expired - Lifetime CN1779853B (zh) 2004-11-05 2005-10-12 自动刷新的易失存储器设备及相关存储器系统和操作方法

Country Status (5)

Country Link
US (1) US7327625B2 (cg-RX-API-DMAC7.html)
JP (1) JP4851156B2 (cg-RX-API-DMAC7.html)
KR (1) KR100634440B1 (cg-RX-API-DMAC7.html)
CN (1) CN1779853B (cg-RX-API-DMAC7.html)
DE (1) DE102005053171B4 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053541B1 (ko) 2010-03-30 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치
US8392650B2 (en) * 2010-04-01 2013-03-05 Intel Corporation Fast exit from self-refresh state of a memory device
KR102205695B1 (ko) * 2014-09-05 2021-01-21 에스케이하이닉스 주식회사 리프레쉬 제어 회로 및 이를 이용한 반도체 장치
KR20170045795A (ko) * 2015-10-20 2017-04-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR20180100804A (ko) * 2017-03-02 2018-09-12 에스케이하이닉스 주식회사 반도체 장치 및 그의 구동 방법
KR102398209B1 (ko) 2017-11-06 2022-05-17 삼성전자주식회사 반도체 메모리 장치, 메모리 시스템 그리고 그것의 리프레쉬 방법
US10622055B2 (en) 2018-08-21 2020-04-14 Micron Technology, Inc. Apparatus for supplying power supply voltage to semiconductor chip including volatile memory cell
US20200258566A1 (en) * 2019-02-12 2020-08-13 Micron Technology, Inc. Refresh rate management for memory
KR102856184B1 (ko) * 2020-11-23 2025-09-05 에스케이하이닉스 주식회사 컨트롤러 및 이를 포함하는 메모리 시스템
KR102866253B1 (ko) * 2023-03-13 2025-09-29 성균관대학교산학협력단 프로세싱-인-메모리 제어 장치, 상기 프로세싱-인-메모리 제어 장치를 포함하는 컴퓨팅 장치 및 프로세싱-인-메모리 제어 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1232266A (zh) * 1998-03-30 1999-10-20 西门子公司 动态随机存取存储器中的译码自动刷新模式
CN1319234A (zh) * 1998-09-17 2001-10-24 阿特梅尔股份有限公司 具有内部刷新的快擦写存储器阵列
US6711082B1 (en) * 2002-11-18 2004-03-23 Infineon Technologies, Ag Method and implementation of an on-chip self refresh feature
US6751143B2 (en) * 2002-04-11 2004-06-15 Micron Technology, Inc. Method and system for low power refresh of dynamic random access memories

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166842A (ja) 1997-08-13 1999-03-09 Toshiba Corp 半導体記憶装置
JP2000149550A (ja) 1998-11-12 2000-05-30 Nec Eng Ltd 自動リフレッシュ機能付ｄｒａｍ
JP2000260180A (ja) 1999-03-08 2000-09-22 Nec Corp 半導体メモリ
JP2001118383A (ja) 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
JP2004022123A (ja) * 2002-06-19 2004-01-22 Murata Mach Ltd インターフェース回路
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1232266A (zh) * 1998-03-30 1999-10-20 西门子公司 动态随机存取存储器中的译码自动刷新模式
CN1319234A (zh) * 1998-09-17 2001-10-24 阿特梅尔股份有限公司 具有内部刷新的快擦写存储器阵列
US6751143B2 (en) * 2002-04-11 2004-06-15 Micron Technology, Inc. Method and system for low power refresh of dynamic random access memories
US6711082B1 (en) * 2002-11-18 2004-03-23 Infineon Technologies, Ag Method and implementation of an on-chip self refresh feature

Also Published As

Publication number Publication date
JP4851156B2 (ja) 2012-01-11
KR100634440B1 (ko) 2006-10-16
US20060098510A1 (en) 2006-05-11
KR20060040380A (ko) 2006-05-10
CN1779853A (zh) 2006-05-31
US7327625B2 (en) 2008-02-05
DE102005053171B4 (de) 2014-05-15
DE102005053171A1 (de) 2006-05-18
JP2006134559A (ja) 2006-05-25

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Granted publication date: 20130403