JP2006121072A - リーク検出器及びプロセスガスモニタ - Google Patents

リーク検出器及びプロセスガスモニタ Download PDF

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Publication number
JP2006121072A
JP2006121072A JP2005296634A JP2005296634A JP2006121072A JP 2006121072 A JP2006121072 A JP 2006121072A JP 2005296634 A JP2005296634 A JP 2005296634A JP 2005296634 A JP2005296634 A JP 2005296634A JP 2006121072 A JP2006121072 A JP 2006121072A
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JP
Japan
Prior art keywords
chamber
gas
gases
mass spectrometer
controller
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005296634A
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English (en)
Japanese (ja)
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JP2006121072A5 (enExample
Inventor
Samuel Leung
レウング サムエル
Ulrich A Bonne
エー． ボンネ ウルリッチ
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2006121072A publication Critical patent/JP2006121072A/ja
Publication of JP2006121072A5 publication Critical patent/JP2006121072A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Examining Or Testing Airtightness (AREA)
JP2005296634A 2004-10-12 2005-10-11 リーク検出器及びプロセスガスモニタ Withdrawn JP2006121072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61771404P 2004-10-12 2004-10-12
US11/087,193 US20060075968A1 (en) 2004-10-12 2005-03-23 Leak detector and process gas monitor

Publications (2)

Publication Number Publication Date
JP2006121072A true JP2006121072A (ja) 2006-05-11
JP2006121072A5 JP2006121072A5 (enExample) 2008-11-27

Family

ID=36742271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005296634A Withdrawn JP2006121072A (ja) 2004-10-12 2005-10-11 リーク検出器及びプロセスガスモニタ

Country Status (5)

Country Link
US (1) US20060075968A1 (enExample)
JP (1) JP2006121072A (enExample)
KR (1) KR20060092966A (enExample)
CN (1) CN1766162A (enExample)
TW (1) TWI277164B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049299A (ja) * 2010-08-26 2012-03-08 Tokyo Electron Ltd プラズマ処理装置及び光学モニタ装置
JP2015510683A (ja) * 2012-01-09 2015-04-09 カール・ツァイス・エスエムティー・ゲーエムベーハー 基板の面処理のための装置及び方法
KR20230026469A (ko) * 2020-10-23 2023-02-24 어플라이드 머티어리얼스, 인코포레이티드 급속 챔버 진공 누설 검사 하드웨어 및 유지 보수 루틴
US20230369033A1 (en) * 2021-11-12 2023-11-16 Mks Instruments, Inc. Methods and Systems for Feedback Control in Plasma Processing Using Radical Sensing

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
CN101460659B (zh) * 2006-06-02 2011-12-07 应用材料股份有限公司 利用压差测量的气流控制
JP5043394B2 (ja) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 蒸着装置およびその運転方法
JP5016031B2 (ja) * 2007-05-15 2012-09-05 株式会社アルバック 質量分析ユニット
EP2686657B1 (en) * 2011-03-16 2019-11-27 Norden Machinery Ab Method and arrangement for leak detection
TWI654695B (zh) * 2012-12-06 2019-03-21 英福康公司 真空工具及測量該真空工具的客真空室中的氛圍的方法
US9209040B2 (en) * 2013-10-11 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphorus silicon insertion for STI-CMP planarity improvement
US9412619B2 (en) * 2014-08-12 2016-08-09 Applied Materials, Inc. Method of outgassing a mask material deposited over a workpiece in a process tool
CN104297423B (zh) * 2014-09-23 2015-12-02 京东方科技集团股份有限公司 检测装置和检测方法
KR101650887B1 (ko) * 2015-02-12 2016-08-25 주식회사 비스텔 반도체 제조 공정에서 통계적 방법을 이용하여, 가스 누출을 감지하는 방법 장치
DE102016205381B4 (de) * 2016-03-31 2023-11-30 Inficon Gmbh Gaslecksuche mit einer Testgassprühvorrichtung
KR101859058B1 (ko) * 2016-05-11 2018-05-18 (주)쎄미시스코 챔버의 리크 검출 방법 및 그 장치
CN107591344B (zh) * 2016-07-06 2022-05-27 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
US10930535B2 (en) * 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US20190109029A1 (en) * 2017-10-05 2019-04-11 Globalfoundries Inc. Methods, Apparatus and System for Dose Control for Semiconductor Wafer Processing
US11111937B2 (en) * 2018-06-29 2021-09-07 The Boeing Company Fault prediction in hydraulic systems
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
KR102541181B1 (ko) * 2018-09-21 2023-06-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치, 프로그램, 기판 처리 방법 및 리크 체크 방법
US10985059B2 (en) * 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication
US11512389B2 (en) * 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
JP2024517316A (ja) * 2021-05-11 2024-04-19 バット ホールディング アーゲー 真空処理システムおよびプロセス制御
US12469751B2 (en) 2021-06-03 2025-11-11 Applied Materials, Inc. Apparatus to detect and quantify radical concentration in semiconductor processing systems

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3944826A (en) * 1973-07-19 1976-03-16 Applied Research Laboratories Limited Methods and apparatus for analyzing mixtures
IL81375A (en) * 1987-01-23 1990-11-05 Univ Ramot Method and apparatus for producing ions by surface ionization of energy-rich molecules and atoms
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
US5300774A (en) * 1991-04-25 1994-04-05 Applied Biosystems, Inc. Time-of-flight mass spectrometer with an aperture enabling tradeoff of transmission efficiency and resolution
US5384465A (en) * 1993-09-17 1995-01-24 Applied Materials, Inc. Spectrum analyzer in an ion implanter
US5565424A (en) * 1994-02-07 1996-10-15 Ramot - University Authority For Applied Research And Industrial Development Ltd. Superactive VIP antagonists
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5943230A (en) * 1996-12-19 1999-08-24 Applied Materials, Inc. Computer-implemented inter-chamber synchronization in a multiple chamber substrate processing system
DK0989858T3 (da) * 1997-06-12 2004-08-09 Applied Research Systems CD28/CTLA-4-inhiberende peptidomimetika og farmaceutiske præparater deraf
JPH11111680A (ja) * 1997-09-30 1999-04-23 Yasuhiro Horiike エッチング方法
KR100257903B1 (ko) * 1997-12-30 2000-08-01 윤종용 인시튜 모니터링가능한 플라즈마 식각장치, 그 인시튜 모니터링방법, 플라즈마 식각챔버내의 잔류물 제거를 위한 인시튜 세정방법
US5947053A (en) * 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
US6114692A (en) * 1998-05-28 2000-09-05 Siemens Applied Automation, Inc. Total ion number determination in an ion cyclotron resonance mass spectrometer using ion magnetron resonance
US6468814B1 (en) * 1998-07-24 2002-10-22 Leybold Inficon, Inc. Detection of nontransient processing anomalies in vacuum manufacturing process
US6255648B1 (en) * 1998-10-16 2001-07-03 Applied Automation, Inc. Programmed electron flux
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6362099B1 (en) * 1999-03-09 2002-03-26 Applied Materials, Inc. Method for enhancing the adhesion of copper deposited by chemical vapor deposition
US6286362B1 (en) * 1999-03-31 2001-09-11 Applied Materials, Inc. Dual mode leak detector
US6210745B1 (en) * 1999-07-08 2001-04-03 National Semiconductor Corporation Method of quality control for chemical vapor deposition
US6490144B1 (en) * 1999-11-29 2002-12-03 Applied Materials, Inc. Support for supporting a substrate in a process chamber
US6372291B1 (en) * 1999-12-23 2002-04-16 Applied Materials, Inc. In situ deposition and integration of silicon nitride in a high density plasma reactor
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
US6745095B1 (en) * 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
US6639227B1 (en) * 2000-10-18 2003-10-28 Applied Materials, Inc. Apparatus and method for charged particle filtering and ion implantation
US7094614B2 (en) * 2001-01-16 2006-08-22 International Business Machines Corporation In-situ monitoring of chemical vapor deposition process by mass spectrometry
US6286632B1 (en) * 2001-03-27 2001-09-11 Kao Teh Chai Brake unit for scooter
US6936183B2 (en) * 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
US7153362B2 (en) * 2002-04-30 2006-12-26 Samsung Electronics Co., Ltd. System and method for real time deposition process control based on resulting product detection

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049299A (ja) * 2010-08-26 2012-03-08 Tokyo Electron Ltd プラズマ処理装置及び光学モニタ装置
US8974628B2 (en) 2010-08-26 2015-03-10 Tokyo Electron Limited Plasma treatment device and optical monitor device
JP2015510683A (ja) * 2012-01-09 2015-04-09 カール・ツァイス・エスエムティー・ゲーエムベーハー 基板の面処理のための装置及び方法
KR20230026469A (ko) * 2020-10-23 2023-02-24 어플라이드 머티어리얼스, 인코포레이티드 급속 챔버 진공 누설 검사 하드웨어 및 유지 보수 루틴
JP2023542266A (ja) * 2020-10-23 2023-10-06 アプライド マテリアルズ インコーポレイテッド ラピッドチャンバ減圧リークチェックハードウェア及び保守ルーチン
JP7534522B2 (ja) 2020-10-23 2024-08-14 アプライド マテリアルズ インコーポレイテッド ラピッドチャンバ減圧リークチェックハードウェア及び保守ルーチン
KR102844296B1 (ko) * 2020-10-23 2025-08-07 어플라이드 머티어리얼스, 인코포레이티드 급속 챔버 진공 누설 검사 하드웨어 및 유지 보수 루틴
US20230369033A1 (en) * 2021-11-12 2023-11-16 Mks Instruments, Inc. Methods and Systems for Feedback Control in Plasma Processing Using Radical Sensing

Also Published As

Publication number Publication date
TW200612511A (en) 2006-04-16
KR20060092966A (ko) 2006-08-23
TWI277164B (en) 2007-03-21
CN1766162A (zh) 2006-05-03
US20060075968A1 (en) 2006-04-13

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