KR20060092966A - 누설 검출기 및 처리 가스 모니터 - Google Patents

누설 검출기 및 처리 가스 모니터 Download PDF

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Publication number
KR20060092966A
KR20060092966A KR1020050095556A KR20050095556A KR20060092966A KR 20060092966 A KR20060092966 A KR 20060092966A KR 1020050095556 A KR1020050095556 A KR 1020050095556A KR 20050095556 A KR20050095556 A KR 20050095556A KR 20060092966 A KR20060092966 A KR 20060092966A
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KR
South Korea
Prior art keywords
chamber
gas
gases
mass spectrometer
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020050095556A
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English (en)
Korean (ko)
Inventor
사무엘 륭
울리치 아. 본느
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20060092966A publication Critical patent/KR20060092966A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Examining Or Testing Airtightness (AREA)
KR1020050095556A 2004-10-12 2005-10-11 누설 검출기 및 처리 가스 모니터 Withdrawn KR20060092966A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61771404P 2004-10-12 2004-10-12
US60/617,714 2004-10-12
US11/087,193 US20060075968A1 (en) 2004-10-12 2005-03-23 Leak detector and process gas monitor
US11/087,193 2005-03-23

Publications (1)

Publication Number Publication Date
KR20060092966A true KR20060092966A (ko) 2006-08-23

Family

ID=36742271

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050095556A Withdrawn KR20060092966A (ko) 2004-10-12 2005-10-11 누설 검출기 및 처리 가스 모니터

Country Status (5)

Country Link
US (1) US20060075968A1 (enExample)
JP (1) JP2006121072A (enExample)
KR (1) KR20060092966A (enExample)
CN (1) CN1766162A (enExample)
TW (1) TWI277164B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160099389A (ko) * 2015-02-12 2016-08-22 주식회사 비스텔 반도체 제조 공정에서 통계적 방법을 이용하여, 가스 누출을 감지하는 방법 장치
KR20210024141A (ko) * 2018-09-21 2021-03-04 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

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JP5043394B2 (ja) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 蒸着装置およびその運転方法
WO2008139809A1 (ja) * 2007-05-15 2008-11-20 Ulvac, Inc. 質量分析ユニット
JP5385875B2 (ja) * 2010-08-26 2014-01-08 東京エレクトロン株式会社 プラズマ処理装置及び光学モニタ装置
WO2012125108A1 (en) * 2011-03-16 2012-09-20 Norden Machinery Ab Method and arrangement for leak detection
DE102012200211A1 (de) * 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
TWI654695B (zh) * 2012-12-06 2019-03-21 英福康公司 真空工具及測量該真空工具的客真空室中的氛圍的方法
US9209040B2 (en) * 2013-10-11 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphorus silicon insertion for STI-CMP planarity improvement
US9412619B2 (en) * 2014-08-12 2016-08-09 Applied Materials, Inc. Method of outgassing a mask material deposited over a workpiece in a process tool
CN104297423B (zh) * 2014-09-23 2015-12-02 京东方科技集团股份有限公司 检测装置和检测方法
DE102016205381B4 (de) * 2016-03-31 2023-11-30 Inficon Gmbh Gaslecksuche mit einer Testgassprühvorrichtung
KR101859058B1 (ko) * 2016-05-11 2018-05-18 (주)쎄미시스코 챔버의 리크 검출 방법 및 그 장치
CN107591344B (zh) * 2016-07-06 2022-05-27 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
US10930535B2 (en) * 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US20190109029A1 (en) * 2017-10-05 2019-04-11 Globalfoundries Inc. Methods, Apparatus and System for Dose Control for Semiconductor Wafer Processing
US11111937B2 (en) * 2018-06-29 2021-09-07 The Boeing Company Fault prediction in hydraulic systems
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
US10985059B2 (en) * 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication
US11512389B2 (en) * 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
US11635338B2 (en) * 2020-10-23 2023-04-25 Applied Materials, Inc. Rapid chamber vacuum leak check hardware and maintenance routine
CN117413352A (zh) * 2021-05-11 2024-01-16 Vat控股公司 真空处理系统和处理控制
US12469751B2 (en) 2021-06-03 2025-11-11 Applied Materials, Inc. Apparatus to detect and quantify radical concentration in semiconductor processing systems
KR20240095456A (ko) * 2021-11-12 2024-06-25 엠케이에스 인스트루먼츠 인코포레이티드 라디칼 감지를 사용하는 플라즈마 프로세싱의 피드백 제어를 위한 방법 및 시스템

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160099389A (ko) * 2015-02-12 2016-08-22 주식회사 비스텔 반도체 제조 공정에서 통계적 방법을 이용하여, 가스 누출을 감지하는 방법 장치
KR20210024141A (ko) * 2018-09-21 2021-03-04 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

Also Published As

Publication number Publication date
TWI277164B (en) 2007-03-21
CN1766162A (zh) 2006-05-03
JP2006121072A (ja) 2006-05-11
US20060075968A1 (en) 2006-04-13
TW200612511A (en) 2006-04-16

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Legal Events

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20051011

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid