CN1766162A - 气体泄漏探测器及制程气体监控 - Google Patents

气体泄漏探测器及制程气体监控 Download PDF

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Publication number
CN1766162A
CN1766162A CNA2005101087427A CN200510108742A CN1766162A CN 1766162 A CN1766162 A CN 1766162A CN A2005101087427 A CNA2005101087427 A CN A2005101087427A CN 200510108742 A CN200510108742 A CN 200510108742A CN 1766162 A CN1766162 A CN 1766162A
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CN
China
Prior art keywords
chamber
gas
gases
controller
mass spectrometer
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Pending
Application number
CNA2005101087427A
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English (en)
Chinese (zh)
Inventor
塞缪尔·梁
乌尔里希·A·邦内
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1766162A publication Critical patent/CN1766162A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Examining Or Testing Airtightness (AREA)
CNA2005101087427A 2004-10-12 2005-09-29 气体泄漏探测器及制程气体监控 Pending CN1766162A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61771404P 2004-10-12 2004-10-12
US60/617,714 2004-10-12
US11/087,193 2005-03-23

Publications (1)

Publication Number Publication Date
CN1766162A true CN1766162A (zh) 2006-05-03

Family

ID=36742271

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005101087427A Pending CN1766162A (zh) 2004-10-12 2005-09-29 气体泄漏探测器及制程气体监控

Country Status (5)

Country Link
US (1) US20060075968A1 (enExample)
JP (1) JP2006121072A (enExample)
KR (1) KR20060092966A (enExample)
CN (1) CN1766162A (enExample)
TW (1) TWI277164B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069551A (zh) * 2010-08-26 2013-04-24 东京毅力科创株式会社 等离子体处理装置和光学监视装置
CN103855048A (zh) * 2012-12-06 2014-06-11 英飞康公司 使用残余气体分析仪的真空室测量
CN107367356A (zh) * 2016-05-11 2017-11-21 塞米西斯科株式会社 腔体泄漏检测方法及其装置
CN107591344A (zh) * 2016-07-06 2018-01-16 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR101501426B1 (ko) * 2006-06-02 2015-03-11 어플라이드 머티어리얼스, 인코포레이티드 차압 측정들에 의한 가스 유동 제어
JP5043394B2 (ja) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 蒸着装置およびその運転方法
JP5016031B2 (ja) * 2007-05-15 2012-09-05 株式会社アルバック 質量分析ユニット
US9097610B2 (en) * 2011-03-16 2015-08-04 Norden Machinery Ab Method and arrangement for leak detection
DE102012200211A1 (de) * 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
US9209040B2 (en) * 2013-10-11 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphorus silicon insertion for STI-CMP planarity improvement
US9412619B2 (en) * 2014-08-12 2016-08-09 Applied Materials, Inc. Method of outgassing a mask material deposited over a workpiece in a process tool
CN104297423B (zh) * 2014-09-23 2015-12-02 京东方科技集团股份有限公司 检测装置和检测方法
KR101650887B1 (ko) * 2015-02-12 2016-08-25 주식회사 비스텔 반도체 제조 공정에서 통계적 방법을 이용하여, 가스 누출을 감지하는 방법 장치
DE102016205381B4 (de) * 2016-03-31 2023-11-30 Inficon Gmbh Gaslecksuche mit einer Testgassprühvorrichtung
US10930535B2 (en) * 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US20190109029A1 (en) * 2017-10-05 2019-04-11 Globalfoundries Inc. Methods, Apparatus and System for Dose Control for Semiconductor Wafer Processing
US11111937B2 (en) * 2018-06-29 2021-09-07 The Boeing Company Fault prediction in hydraulic systems
JP7013589B2 (ja) * 2018-09-21 2022-01-31 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
US10985059B2 (en) * 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication
US11512389B2 (en) * 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
US11635338B2 (en) * 2020-10-23 2023-04-25 Applied Materials, Inc. Rapid chamber vacuum leak check hardware and maintenance routine
KR20240007199A (ko) * 2021-05-11 2024-01-16 배트 홀딩 아게 진공 처리 시스템 및 공정 제어
US12469751B2 (en) 2021-06-03 2025-11-11 Applied Materials, Inc. Apparatus to detect and quantify radical concentration in semiconductor processing systems
WO2023086395A1 (en) * 2021-11-12 2023-05-19 Mks Instruments, Inc. Methods and systems for feedback control in plasma processing using radical sensing

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3944826A (en) * 1973-07-19 1976-03-16 Applied Research Laboratories Limited Methods and apparatus for analyzing mixtures
IL81375A (en) * 1987-01-23 1990-11-05 Univ Ramot Method and apparatus for producing ions by surface ionization of energy-rich molecules and atoms
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
US5300774A (en) * 1991-04-25 1994-04-05 Applied Biosystems, Inc. Time-of-flight mass spectrometer with an aperture enabling tradeoff of transmission efficiency and resolution
US5384465A (en) * 1993-09-17 1995-01-24 Applied Materials, Inc. Spectrum analyzer in an ion implanter
US5565424A (en) * 1994-02-07 1996-10-15 Ramot - University Authority For Applied Research And Industrial Development Ltd. Superactive VIP antagonists
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5943230A (en) * 1996-12-19 1999-08-24 Applied Materials, Inc. Computer-implemented inter-chamber synchronization in a multiple chamber substrate processing system
DE69823352T2 (de) * 1997-06-12 2004-09-02 Applied Research Systems Ars Holding N.V. Cd28/ctla-4 inhibierende peptidomimetika und diese enthaltende pharmazeutische zusammensetzungen
JPH11111680A (ja) * 1997-09-30 1999-04-23 Yasuhiro Horiike エッチング方法
KR100257903B1 (ko) * 1997-12-30 2000-08-01 윤종용 인시튜 모니터링가능한 플라즈마 식각장치, 그 인시튜 모니터링방법, 플라즈마 식각챔버내의 잔류물 제거를 위한 인시튜 세정방법
US5947053A (en) * 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
US6114692A (en) * 1998-05-28 2000-09-05 Siemens Applied Automation, Inc. Total ion number determination in an ion cyclotron resonance mass spectrometer using ion magnetron resonance
US6468814B1 (en) * 1998-07-24 2002-10-22 Leybold Inficon, Inc. Detection of nontransient processing anomalies in vacuum manufacturing process
US6255648B1 (en) * 1998-10-16 2001-07-03 Applied Automation, Inc. Programmed electron flux
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6362099B1 (en) * 1999-03-09 2002-03-26 Applied Materials, Inc. Method for enhancing the adhesion of copper deposited by chemical vapor deposition
US6286362B1 (en) * 1999-03-31 2001-09-11 Applied Materials, Inc. Dual mode leak detector
US6210745B1 (en) * 1999-07-08 2001-04-03 National Semiconductor Corporation Method of quality control for chemical vapor deposition
US6490144B1 (en) * 1999-11-29 2002-12-03 Applied Materials, Inc. Support for supporting a substrate in a process chamber
US6372291B1 (en) * 1999-12-23 2002-04-16 Applied Materials, Inc. In situ deposition and integration of silicon nitride in a high density plasma reactor
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
US6745095B1 (en) * 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
US6639227B1 (en) * 2000-10-18 2003-10-28 Applied Materials, Inc. Apparatus and method for charged particle filtering and ion implantation
US7094614B2 (en) * 2001-01-16 2006-08-22 International Business Machines Corporation In-situ monitoring of chemical vapor deposition process by mass spectrometry
US6286632B1 (en) * 2001-03-27 2001-09-11 Kao Teh Chai Brake unit for scooter
US6936183B2 (en) * 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
US7153362B2 (en) * 2002-04-30 2006-12-26 Samsung Electronics Co., Ltd. System and method for real time deposition process control based on resulting product detection

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069551A (zh) * 2010-08-26 2013-04-24 东京毅力科创株式会社 等离子体处理装置和光学监视装置
CN103855048A (zh) * 2012-12-06 2014-06-11 英飞康公司 使用残余气体分析仪的真空室测量
CN103855048B (zh) * 2012-12-06 2019-03-05 英飞康公司 使用残余气体分析仪的真空室测量
CN107367356A (zh) * 2016-05-11 2017-11-21 塞米西斯科株式会社 腔体泄漏检测方法及其装置
CN107591344A (zh) * 2016-07-06 2018-01-16 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN107591344B (zh) * 2016-07-06 2022-05-27 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法

Also Published As

Publication number Publication date
JP2006121072A (ja) 2006-05-11
KR20060092966A (ko) 2006-08-23
TWI277164B (en) 2007-03-21
TW200612511A (en) 2006-04-16
US20060075968A1 (en) 2006-04-13

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SE01 Entry into force of request for substantive examination
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Open date: 20060503