KR101061421B1 - 반도체 제조공정을 위한 전구체 순도 측정방법 - Google Patents
반도체 제조공정을 위한 전구체 순도 측정방법 Download PDFInfo
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- KR101061421B1 KR101061421B1 KR1020090024812A KR20090024812A KR101061421B1 KR 101061421 B1 KR101061421 B1 KR 101061421B1 KR 1020090024812 A KR1020090024812 A KR 1020090024812A KR 20090024812 A KR20090024812 A KR 20090024812A KR 101061421 B1 KR101061421 B1 KR 101061421B1
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- KR
- South Korea
- Prior art keywords
- pressure
- precursor
- purity
- valve
- measuring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 등압유지챔버에 관연결된 제 1밸브를 열고 메인펌핑부를 가동시켜 기본압력을 발생시키는 단계(S100);상기 제 1밸브를 닫고 제 2밸브를 열어 시료용기에서 시료의 증기를 압력측정부로 유입시키는 단계(S200);상기 압력측정부에서 전구체의 포화증기압력을 측정하는 단계(S300); 및상기 포화증기압력의 재현성 정도를 기준물질과 비교하여 증기상에서 전구체 순도를 판별하는 단계(S600)로 이루어지며,상기 포화증기압력을 측정하는 단계와 전구체 순도를 판별하는 단계 사이에 상기 압력측정부에서 포화증기압력을 측정한 이후 정확한 측정을 위해 메인펌핑부 및 부설밸브를 열어 오염원을 제거하는 단계(S400);와상기 제 1밸브를 닫고 상기 제 2밸브를 열어 시료의 증기를 상기 압력측정부로 유입시켜 같은 조건에서 2번째 포화증기압력을 재차 측정하는 단계(S500)를 더 포함하고,상기 기본압력을 발생시키는 단계(S100)에서 상기 포화증기압력을 재차 측정하는 단계(S500)까지 반복하여 3회 이상 상기 포화증기압력을 측정하는 것을 특징으로 하는 반도체 제조공정을 위한 전구체 순도 측정방법.
- 삭제
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090024812A KR101061421B1 (ko) | 2009-03-24 | 2009-03-24 | 반도체 제조공정을 위한 전구체 순도 측정방법 |
Applications Claiming Priority (1)
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KR1020090024812A KR101061421B1 (ko) | 2009-03-24 | 2009-03-24 | 반도체 제조공정을 위한 전구체 순도 측정방법 |
Publications (2)
Publication Number | Publication Date |
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KR20100106716A KR20100106716A (ko) | 2010-10-04 |
KR101061421B1 true KR101061421B1 (ko) | 2011-09-01 |
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KR1020090024812A KR101061421B1 (ko) | 2009-03-24 | 2009-03-24 | 반도체 제조공정을 위한 전구체 순도 측정방법 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101323885B1 (ko) * | 2012-05-04 | 2013-10-30 | 한국표준과학연구원 | 전구체의 증기압 측정장치 및 방법 |
US20240190718A1 (en) * | 2022-12-09 | 2024-06-13 | Entegris, Inc. | Molybdenum precursors and related methods |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005285806A (ja) | 2004-03-26 | 2005-10-13 | Tdk Corp | 積層セラミック素子の製造方法 |
US7050708B2 (en) | 2001-10-11 | 2006-05-23 | Micron Technology, Inc. | Delivery of solid chemical precursors |
KR100805930B1 (ko) * | 2006-09-27 | 2008-02-21 | 한국표준과학연구원 | 반도체 제조 공정을 위한 전구체 증기압 측정장치 및 방법 |
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- 2009-03-24 KR KR1020090024812A patent/KR101061421B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7050708B2 (en) | 2001-10-11 | 2006-05-23 | Micron Technology, Inc. | Delivery of solid chemical precursors |
JP2005285806A (ja) | 2004-03-26 | 2005-10-13 | Tdk Corp | 積層セラミック素子の製造方法 |
KR100805930B1 (ko) * | 2006-09-27 | 2008-02-21 | 한국표준과학연구원 | 반도체 제조 공정을 위한 전구체 증기압 측정장치 및 방법 |
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