JP2006114861A - 研磨装置及び研磨方法 - Google Patents
研磨装置及び研磨方法 Download PDFInfo
- Publication number
- JP2006114861A JP2006114861A JP2005024182A JP2005024182A JP2006114861A JP 2006114861 A JP2006114861 A JP 2006114861A JP 2005024182 A JP2005024182 A JP 2005024182A JP 2005024182 A JP2005024182 A JP 2005024182A JP 2006114861 A JP2006114861 A JP 2006114861A
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- JP
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- Prior art keywords
- polishing
- substrate
- polishing pad
- pad
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 580
- 238000000034 method Methods 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 claims description 155
- 239000007788 liquid Substances 0.000 claims description 151
- 239000006061 abrasive grain Substances 0.000 claims description 107
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 31
- 230000007246 mechanism Effects 0.000 claims description 31
- 230000001965 increasing effect Effects 0.000 claims description 28
- 238000003825 pressing Methods 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 143
- 239000010949 copper Substances 0.000 description 106
- 239000010410 layer Substances 0.000 description 44
- 238000005336 cracking Methods 0.000 description 29
- 238000005260 corrosion Methods 0.000 description 27
- 230000007797 corrosion Effects 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 26
- 239000007789 gas Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 238000003860 storage Methods 0.000 description 15
- 229910003460 diamond Inorganic materials 0.000 description 12
- 239000010432 diamond Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000008151 electrolyte solution Substances 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- -1 methylsiloxane Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005024182A JP2006114861A (ja) | 2004-09-14 | 2005-01-31 | 研磨装置及び研磨方法 |
| TW094129205A TW200613092A (en) | 2004-08-27 | 2005-08-26 | Polishing apparatus and polishing method |
| PCT/JP2005/016063 WO2006022452A2 (en) | 2004-08-27 | 2005-08-26 | Polishing apparatus and polishing method |
| US11/661,141 US20070254558A1 (en) | 2004-08-27 | 2005-08-26 | Polishing Apparatus and Polishing Method |
| US11/797,480 US20070205112A1 (en) | 2004-08-27 | 2007-05-03 | Polishing apparatus and polishing method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004267379 | 2004-09-14 | ||
| JP2005024182A JP2006114861A (ja) | 2004-09-14 | 2005-01-31 | 研磨装置及び研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006114861A true JP2006114861A (ja) | 2006-04-27 |
| JP2006114861A5 JP2006114861A5 (enExample) | 2008-03-13 |
Family
ID=36383091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005024182A Pending JP2006114861A (ja) | 2004-08-27 | 2005-01-31 | 研磨装置及び研磨方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006114861A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009107050A (ja) * | 2007-10-29 | 2009-05-21 | Covalent Materials Corp | ワイヤソーによるワーク切断方法 |
| JP2009279720A (ja) * | 2008-05-23 | 2009-12-03 | Jgc Catalysts & Chemicals Ltd | 研磨用粒子分散液およびその製造方法 |
| JP2017507226A (ja) * | 2013-12-19 | 2017-03-16 | クリングシュポル アクチェンゲゼルシャフト | 高い研磨性能を示す研磨粒子及び研磨材 |
| US10081747B2 (en) | 2014-06-18 | 2018-09-25 | Klingspor Ag | Multilayer abrasive particle |
| JP2019127405A (ja) * | 2018-01-23 | 2019-08-01 | 日揮触媒化成株式会社 | セリア系複合中空微粒子分散液、その製造方法及びセリア系複合中空微粒子分散液を含む研磨用砥粒分散液 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003080457A (ja) * | 2001-09-07 | 2003-03-18 | Ebara Corp | 切削工具及びその製造方法 |
-
2005
- 2005-01-31 JP JP2005024182A patent/JP2006114861A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003080457A (ja) * | 2001-09-07 | 2003-03-18 | Ebara Corp | 切削工具及びその製造方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009107050A (ja) * | 2007-10-29 | 2009-05-21 | Covalent Materials Corp | ワイヤソーによるワーク切断方法 |
| JP2009279720A (ja) * | 2008-05-23 | 2009-12-03 | Jgc Catalysts & Chemicals Ltd | 研磨用粒子分散液およびその製造方法 |
| JP2017507226A (ja) * | 2013-12-19 | 2017-03-16 | クリングシュポル アクチェンゲゼルシャフト | 高い研磨性能を示す研磨粒子及び研磨材 |
| US10308851B2 (en) | 2013-12-19 | 2019-06-04 | Klingspor Ag | Abrasive particle and abrasive exhibiting high grinding performance |
| US10081747B2 (en) | 2014-06-18 | 2018-09-25 | Klingspor Ag | Multilayer abrasive particle |
| JP2019127405A (ja) * | 2018-01-23 | 2019-08-01 | 日揮触媒化成株式会社 | セリア系複合中空微粒子分散液、その製造方法及びセリア系複合中空微粒子分散液を含む研磨用砥粒分散液 |
| JP7002350B2 (ja) | 2018-01-23 | 2022-01-20 | 日揮触媒化成株式会社 | セリア系複合中空微粒子分散液、その製造方法及びセリア系複合中空微粒子分散液を含む研磨用砥粒分散液 |
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