JP5716017B2 - 固体粒子の存在下で材料をエッチングする方法 - Google Patents
固体粒子の存在下で材料をエッチングする方法 Download PDFInfo
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- JP5716017B2 JP5716017B2 JP2012511320A JP2012511320A JP5716017B2 JP 5716017 B2 JP5716017 B2 JP 5716017B2 JP 2012511320 A JP2012511320 A JP 2012511320A JP 2012511320 A JP2012511320 A JP 2012511320A JP 5716017 B2 JP5716017 B2 JP 5716017B2
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- 239000000463 material Substances 0.000 title claims description 68
- 238000005530 etching Methods 0.000 title claims description 48
- 239000002245 particle Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 33
- 239000007787 solid Substances 0.000 title claims description 29
- 239000013626 chemical specie Substances 0.000 claims description 33
- 150000001875 compounds Chemical class 0.000 claims description 17
- 150000003254 radicals Chemical class 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 4
- 239000000725 suspension Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000000460 chlorine Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Description
エッチングすべき前記材料と反応できる少なくとも1つの化学種を選択するステップと、
前記材料とは反応しないが、前記化学種を解放できる少なくとも1つの可溶性化合物を選択するステップと、
前記化合物を含み、かつ懸濁状態にある固体の粒または粒子の粉体を含む溶液を製造するステップと、
前記溶液内にエッチングすべき前記材料を入れるステップと、
前記化学種を発生させ、これら化学種が可溶性化合物または沈殿物を発生しながらエッチングすべき材料と反応するように、前記固体の粒または粒子の前記粉体の存在下で、活性キャビテーションバブルを発生できる少なくとも1つの周波数を有する高周波超音波を前記溶液内で発生するステップとを備える、構造体をエッチングするための方法が提案される。
図には、ウェーハ状をした浸漬構造体1が示されており、このウェーハはシリコン基板2を含み、このシリコン基板は、厚み方向に不均等な状態を呈するよう、所定のパターン、例えばチェッカーパターンにエッチングされ、銅の層4でカバーされた絶縁層3でコーティングされている。通常、実際には酸化膜3と銅の層4との間の境界には、中間結合層、例えば窒化チタン(TiN)の層が堆積されている。
シリコン酸化膜4を支持するシリコンウェーハ2を含む構造体1を使って、このシリコン酸化膜を除去する試みを行うことができる。
実施例1の場合のように銅の層を支持するか、または実施例2のようにシリコン酸化膜を支持するシリコンウェーハを使用し、この層の表面の凹凸を減少させ試みを行うことができる。
実施例1のように銅の層を有するか、または実施例2のようにシリコン酸化膜を有するウェーハ1を使用して、この層の厚さを薄くする試みを行うことができる。
Claims (12)
- エッチングすべき少なくとも1つの材料(4)を含む構造体(1)をエッチングするための方法において、
エッチングすべき前記材料(4)と反応できる少なくとも1つのラジカルな化学種を選択するステップと、
前記材料とは反応しないが、前記化学種を放出できる少なくとも1つの可溶性化合物を選択するステップと、
前記化合物を含み、かつ懸濁状態にある固体の粒子(13)の添加された粉体を含む溶液(11)を製造するステップと、
前記溶液内にエッチングすべき前記材料を入れるステップと、
前記化学種が発生してエッチングすべき材料と反応する一方、可溶性化合物または沈殿物を発生するように、固体の粒子の前記粉体の存在下で活性キャビテーションバブルを発生できる少なくとも1つの周波数を有する高周波超音波を前記溶液内で発生するステップとを備える、構造体(1)をエッチングするための方法。 - 前記粒子のサイズは、活性キャビテーションバブルの平均サイズと同様である、請求項1に記載の方法。
- 前記粒子は、エッチングすべき前記材料の硬度よりも高い硬度を示す、請求項1および2のいずれかに記載の方法。
- 前記粒子の少なくとも一部は、エッチングすべき前記材料の表面の欠陥のサイズと同様かまたはそれ未満のサイズを有する、請求項1〜3のうちのいずれか1項に記載の方法。
- 前記粒子の少なくとも一部は、エッチングすべき前記材料に生じた孔のサイズ未満のサイズを有する、請求項1〜4のうちのいずれか1項に記載の方法。
- 前記サイズの比は15分の1未満である、請求項4または5に記載の方法。
- 前記粒子のサイズは1ミクロン未満である、請求項1〜6のうちのいずれか1項に記載の方法。
- 前記エッチングすべき前記材料の表面を溶液内に浸漬する、請求項1〜7のうちのいずれか1項に記載の方法。
- 前記高周波超音波の周波数は100kHzから3MHzの間にある、請求項1〜8のうちのいずれか1項に記載の方法。
- 前記高周波超音波の周波数は200kHzから600kHzの間にある、請求項1〜9のうちのいずれか1項に記載の方法。
- エッチングすべき少なくとも1つの第1材料(4)と、少なくとも1つの第2材料(2)とを含む構造体(1)を選択的にエッチングするための請求項1〜10のうちのいずれか1項に記載の方法において、前記選択された化学種および前記可溶性化合物は前記第2材料(2)とは反応しない方法。
- エッチングすべき材料の全体または一部を除去し、エッチングすべき材料の表面の凹凸を低減するよう、またはエッチングすべき材料の厚さを薄くするように、前記高周波超音波を発生する時間の長さを決定する、請求項1〜11のうちのいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0953294 | 2009-05-18 | ||
FR0953294A FR2945663B1 (fr) | 2009-05-18 | 2009-05-18 | Procede de gravure d'un materiau en presence de particules solides. |
PCT/FR2010/050928 WO2010133787A1 (fr) | 2009-05-18 | 2010-05-12 | Procede de gravure d'un materiau en presence de particules solides |
Publications (2)
Publication Number | Publication Date |
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JP2012527758A JP2012527758A (ja) | 2012-11-08 |
JP5716017B2 true JP5716017B2 (ja) | 2015-05-13 |
Family
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JP2012511320A Expired - Fee Related JP5716017B2 (ja) | 2009-05-18 | 2010-05-12 | 固体粒子の存在下で材料をエッチングする方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8828872B2 (ja) |
EP (1) | EP2433297B1 (ja) |
JP (1) | JP5716017B2 (ja) |
FR (1) | FR2945663B1 (ja) |
WO (1) | WO2010133787A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107833827B (zh) * | 2017-10-25 | 2020-07-31 | 武汉华星光电技术有限公司 | 一种阵列基板的刻蚀方法 |
Family Cites Families (13)
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US4544066A (en) | 1984-05-17 | 1985-10-01 | Gte Communication Systems Corporation | Printed wiring board file employing wire structural members |
JPS61235584A (ja) * | 1985-04-10 | 1986-10-20 | Kawasaki Steel Corp | 鋼板の酸洗方法 |
JPH0753640B2 (ja) | 1988-10-05 | 1995-06-07 | 住友電気工業株式会社 | GaAs単結晶鏡面ウエハおよびその製造方法 |
US5593507A (en) * | 1990-08-22 | 1997-01-14 | Kabushiki Kaisha Toshiba | Cleaning method and cleaning apparatus |
JP2002367953A (ja) * | 2001-06-04 | 2002-12-20 | Toshiba Corp | 薄膜処理液及び薄膜処理方法 |
KR100465844B1 (ko) | 2002-06-03 | 2005-01-13 | 주식회사 티씨케이 | 에칭장비용 캐소드전극의 홀 가공 방법 |
US6746967B2 (en) | 2002-09-30 | 2004-06-08 | Intel Corporation | Etching metal using sonication |
US20040226654A1 (en) * | 2002-12-17 | 2004-11-18 | Akihisa Hongo | Substrate processing apparatus and substrate processing method |
US20040259366A1 (en) * | 2003-06-20 | 2004-12-23 | Kim Seong Han | Method and composition for the chemical-vibrational-mechanical planarization of copper |
AU2003297104A1 (en) * | 2003-07-09 | 2005-02-25 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
JP2009517543A (ja) * | 2005-11-23 | 2009-04-30 | セミトゥール・インコーポレイテッド | 微細構造ワークピースの湿式化学処理中に液体を振動させるための装置及び方法 |
FR2923947B1 (fr) * | 2007-11-20 | 2010-06-11 | Inst Polytechnique Grenoble | Procede et dispositif de gravure selective. |
US20090236317A1 (en) * | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
-
2009
- 2009-05-18 FR FR0953294A patent/FR2945663B1/fr active Active
-
2010
- 2010-05-12 WO PCT/FR2010/050928 patent/WO2010133787A1/fr active Application Filing
- 2010-05-12 EP EP10728752.6A patent/EP2433297B1/fr not_active Not-in-force
- 2010-05-12 US US13/320,618 patent/US8828872B2/en not_active Expired - Fee Related
- 2010-05-12 JP JP2012511320A patent/JP5716017B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2012527758A (ja) | 2012-11-08 |
FR2945663A1 (fr) | 2010-11-19 |
US8828872B2 (en) | 2014-09-09 |
EP2433297A1 (fr) | 2012-03-28 |
WO2010133787A1 (fr) | 2010-11-25 |
US20120149196A1 (en) | 2012-06-14 |
EP2433297B1 (fr) | 2015-06-24 |
FR2945663B1 (fr) | 2012-02-17 |
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