JP2006049759A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP2006049759A JP2006049759A JP2004232098A JP2004232098A JP2006049759A JP 2006049759 A JP2006049759 A JP 2006049759A JP 2004232098 A JP2004232098 A JP 2004232098A JP 2004232098 A JP2004232098 A JP 2004232098A JP 2006049759 A JP2006049759 A JP 2006049759A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 128
- 239000011229 interlayer Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000010485 coping Effects 0.000 abstract 1
- 239000011295 pitch Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 119
- 239000002184 metal Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 110
- 230000004888 barrier function Effects 0.000 description 36
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004232098A JP2006049759A (ja) | 2004-08-09 | 2004-08-09 | 半導体装置及び半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004232098A JP2006049759A (ja) | 2004-08-09 | 2004-08-09 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006049759A true JP2006049759A (ja) | 2006-02-16 |
| JP2006049759A5 JP2006049759A5 (enExample) | 2007-09-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004232098A Pending JP2006049759A (ja) | 2004-08-09 | 2004-08-09 | 半導体装置及び半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006049759A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159651A (ja) * | 2006-12-21 | 2008-07-10 | Elpida Memory Inc | 多層配線、積層アルミニウム配線、半導体装置、及びそれらの製造方法 |
| US9520359B2 (en) | 2014-10-30 | 2016-12-13 | Samsung Electronics Co., Ltd. | Semiconductor device, display driver integrated circuit including the device, and display device including the device |
| CN119208291A (zh) * | 2023-06-15 | 2024-12-27 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
| CN120565491A (zh) * | 2025-07-31 | 2025-08-29 | 杭州富芯半导体有限公司 | 一种半导体结构、制备方法及半导体器件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120447A (ja) * | 1992-10-05 | 1994-04-28 | Mitsubishi Electric Corp | 半導体装置の導電層接続構造およびその構造を備えたｄｒａｍ |
| JPH11176932A (ja) * | 1997-12-09 | 1999-07-02 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| JP2001274247A (ja) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2004
- 2004-08-09 JP JP2004232098A patent/JP2006049759A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120447A (ja) * | 1992-10-05 | 1994-04-28 | Mitsubishi Electric Corp | 半導体装置の導電層接続構造およびその構造を備えたｄｒａｍ |
| JPH11176932A (ja) * | 1997-12-09 | 1999-07-02 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| JP2001274247A (ja) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159651A (ja) * | 2006-12-21 | 2008-07-10 | Elpida Memory Inc | 多層配線、積層アルミニウム配線、半導体装置、及びそれらの製造方法 |
| US9520359B2 (en) | 2014-10-30 | 2016-12-13 | Samsung Electronics Co., Ltd. | Semiconductor device, display driver integrated circuit including the device, and display device including the device |
| CN119208291A (zh) * | 2023-06-15 | 2024-12-27 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
| CN120565491A (zh) * | 2025-07-31 | 2025-08-29 | 杭州富芯半导体有限公司 | 一种半导体结构、制备方法及半导体器件 |
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