JP2006024654A - インターポーザ - Google Patents
インターポーザ Download PDFInfo
- Publication number
- JP2006024654A JP2006024654A JP2004199872A JP2004199872A JP2006024654A JP 2006024654 A JP2006024654 A JP 2006024654A JP 2004199872 A JP2004199872 A JP 2004199872A JP 2004199872 A JP2004199872 A JP 2004199872A JP 2006024654 A JP2006024654 A JP 2006024654A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- substrate
- interposer
- layer
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004020 conductor Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004199872A JP2006024654A (ja) | 2004-07-06 | 2004-07-06 | インターポーザ |
| KR1020087003018A KR100858075B1 (ko) | 2004-07-06 | 2005-07-05 | 인터포저 |
| PCT/JP2005/012425 WO2006004128A1 (ja) | 2004-07-06 | 2005-07-05 | 貫通基板およびインターポーザ、ならびに貫通基板の製造方法 |
| US11/631,638 US7866038B2 (en) | 2004-07-06 | 2005-07-05 | Through substrate, interposer and manufacturing method of through substrate |
| EP05765497A EP1775761A4 (en) | 2004-07-06 | 2005-07-05 | SUBSTRATE AND INTERMEDIATE AND METHOD FOR PRODUCING A SUBSTRATE |
| TW094122866A TW200616503A (en) | 2004-07-06 | 2005-07-06 | Through substrate and interposer, and method for manufacturing through substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004199872A JP2006024654A (ja) | 2004-07-06 | 2004-07-06 | インターポーザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006024654A true JP2006024654A (ja) | 2006-01-26 |
| JP2006024654A5 JP2006024654A5 (enExample) | 2007-04-05 |
Family
ID=35797732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004199872A Pending JP2006024654A (ja) | 2004-07-06 | 2004-07-06 | インターポーザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006024654A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9474147B2 (en) | 2014-06-10 | 2016-10-18 | Fujitsu Limited | Socket for semiconductor component, printed circuit board unit, and information processing apparatus |
| US9570375B2 (en) | 2012-06-27 | 2017-02-14 | Longitude Semiconductor S.A.R.L. | Semiconductor device having silicon interposer on which semiconductor chip is mounted |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11163192A (ja) * | 1997-11-25 | 1999-06-18 | Hitachi Ltd | セラミック多層同軸信号配線基板及びセラミック多層同軸信号配線基板の製造方法及び電子回路装置 |
| JP2000151114A (ja) * | 1998-11-11 | 2000-05-30 | Sony Corp | 多層基板及びその製造方法 |
| JP2001332652A (ja) * | 2000-05-24 | 2001-11-30 | Nec Corp | 半導体パッケージ及びその製造方法 |
| JP2001352017A (ja) * | 2000-06-06 | 2001-12-21 | Fujitsu Ltd | 電子装置実装基板及びその製造方法 |
| JP2004526321A (ja) * | 2001-02-22 | 2004-08-26 | トル−シ・テクノロジーズ・インコーポレイテッド | 開口に複数の導電層が形成された半導体構造体、及びその製造方法 |
-
2004
- 2004-07-06 JP JP2004199872A patent/JP2006024654A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11163192A (ja) * | 1997-11-25 | 1999-06-18 | Hitachi Ltd | セラミック多層同軸信号配線基板及びセラミック多層同軸信号配線基板の製造方法及び電子回路装置 |
| JP2000151114A (ja) * | 1998-11-11 | 2000-05-30 | Sony Corp | 多層基板及びその製造方法 |
| JP2001332652A (ja) * | 2000-05-24 | 2001-11-30 | Nec Corp | 半導体パッケージ及びその製造方法 |
| JP2001352017A (ja) * | 2000-06-06 | 2001-12-21 | Fujitsu Ltd | 電子装置実装基板及びその製造方法 |
| JP2004526321A (ja) * | 2001-02-22 | 2004-08-26 | トル−シ・テクノロジーズ・インコーポレイテッド | 開口に複数の導電層が形成された半導体構造体、及びその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9570375B2 (en) | 2012-06-27 | 2017-02-14 | Longitude Semiconductor S.A.R.L. | Semiconductor device having silicon interposer on which semiconductor chip is mounted |
| US9474147B2 (en) | 2014-06-10 | 2016-10-18 | Fujitsu Limited | Socket for semiconductor component, printed circuit board unit, and information processing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070220 |
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| A621 | Written request for application examination |
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