JP2006019746A - ケミカルメカニカルポリッシング組成物及びそれに関連する方法 - Google Patents

ケミカルメカニカルポリッシング組成物及びそれに関連する方法 Download PDF

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Publication number
JP2006019746A
JP2006019746A JP2005193258A JP2005193258A JP2006019746A JP 2006019746 A JP2006019746 A JP 2006019746A JP 2005193258 A JP2005193258 A JP 2005193258A JP 2005193258 A JP2005193258 A JP 2005193258A JP 2006019746 A JP2006019746 A JP 2006019746A
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JP
Japan
Prior art keywords
acid
acrylic acid
copolymer
gum
methacrylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005193258A
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English (en)
Japanese (ja)
Other versions
JP2006019746A5 (enExample
Inventor
Francis J Kelley
フランシス・ジェイ・ケリー
John Quanci
ジョン・クァンシ
Joseph K So
ジョセフ・ケー・ソォー
Hongyu Wang
ホンユー・ワン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2006019746A publication Critical patent/JP2006019746A/ja
Publication of JP2006019746A5 publication Critical patent/JP2006019746A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2005193258A 2004-07-01 2005-07-01 ケミカルメカニカルポリッシング組成物及びそれに関連する方法 Pending JP2006019746A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/882,567 US7384871B2 (en) 2004-07-01 2004-07-01 Chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
JP2006019746A true JP2006019746A (ja) 2006-01-19
JP2006019746A5 JP2006019746A5 (enExample) 2008-08-14

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ID=35512461

Family Applications (1)

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JP2005193258A Pending JP2006019746A (ja) 2004-07-01 2005-07-01 ケミカルメカニカルポリッシング組成物及びそれに関連する方法

Country Status (4)

Country Link
US (1) US7384871B2 (enExample)
JP (1) JP2006019746A (enExample)
CN (1) CN100355819C (enExample)
TW (1) TWI394820B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128430A1 (ja) 2008-04-15 2009-10-22 日立化成工業株式会社 金属膜用研磨液及びこれを用いた研磨方法
JP2010512657A (ja) * 2006-12-22 2010-04-22 テクノ セミケム シーオー．， エルティーディー． ゼオライトを含有する銅化学機械的研磨組成物
JP2014049633A (ja) * 2012-08-31 2014-03-17 Fujimi Inc 研磨用組成物及び基板の製造方法
JP2019537246A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのための化学機械研磨法
JP2019537244A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法
JP2019537245A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
JP2007088302A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属用研磨液及び化学的機械的研磨方法
KR100786949B1 (ko) * 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
TW200801178A (en) * 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
KR100949250B1 (ko) * 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2010078566A1 (en) * 2009-01-05 2010-07-08 Innopad, Inc. Multi-layered chemical-mechanical planarization pad
US8536106B2 (en) * 2010-04-14 2013-09-17 Ecolab Usa Inc. Ferric hydroxycarboxylate as a builder
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US9299585B2 (en) 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
KR102679492B1 (ko) * 2018-11-15 2024-07-01 솔브레인 주식회사 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법
WO2022123725A1 (ja) * 2020-12-10 2022-06-16 株式会社日立ハイテク 半導体製造方法及び半導体製造装置
CN114561187B (zh) * 2022-03-07 2022-10-21 山东麦丰新材料科技股份有限公司 一种环保型乳化精磨液及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243730A (ja) * 1999-02-18 2000-09-08 Tokyo Magnetic Printing Co Ltd 化学機械研磨組成物
JP2002134442A (ja) * 2000-10-26 2002-05-10 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
WO2002083804A1 (en) * 2001-04-12 2002-10-24 Rodel Holdings, Inc. Polishing composition having a surfactant
WO2002094957A2 (en) * 2001-05-18 2002-11-28 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2005191544A (ja) * 2003-11-13 2005-07-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 銅を研磨するための組成物及び方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
KR20020027571A (ko) 1999-08-24 2002-04-13 갤반 마틴 절연체와 금속의 ｃｍｐ용 조성물 및 이에 관련된 방법
US7232529B1 (en) 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4560294B2 (ja) 2002-03-25 2010-10-13 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タンタルバリア除去溶液
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050136671A1 (en) * 2003-12-22 2005-06-23 Goldberg Wendy B. Compositions and methods for low downforce pressure polishing of copper

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243730A (ja) * 1999-02-18 2000-09-08 Tokyo Magnetic Printing Co Ltd 化学機械研磨組成物
JP2002134442A (ja) * 2000-10-26 2002-05-10 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
WO2002083804A1 (en) * 2001-04-12 2002-10-24 Rodel Holdings, Inc. Polishing composition having a surfactant
WO2002094957A2 (en) * 2001-05-18 2002-11-28 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2005502188A (ja) * 2001-05-18 2005-01-20 ロデール　ホールディングス　インコーポレイテッド ケミカルメカニカル研磨組成物およびそれに関する方法
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2005191544A (ja) * 2003-11-13 2005-07-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 銅を研磨するための組成物及び方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010512657A (ja) * 2006-12-22 2010-04-22 テクノ セミケム シーオー．， エルティーディー． ゼオライトを含有する銅化学機械的研磨組成物
WO2009128430A1 (ja) 2008-04-15 2009-10-22 日立化成工業株式会社 金属膜用研磨液及びこれを用いた研磨方法
JP5176078B2 (ja) * 2008-04-15 2013-04-03 日立化成株式会社 金属膜用研磨液及びこれを用いた研磨方法
US8734204B2 (en) 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
JP2014049633A (ja) * 2012-08-31 2014-03-17 Fujimi Inc 研磨用組成物及び基板の製造方法
JP2019537246A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのための化学機械研磨法
JP2019537244A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法
JP2019537245A (ja) * 2016-09-29 2019-12-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法

Also Published As

Publication number Publication date
US7384871B2 (en) 2008-06-10
US20060000150A1 (en) 2006-01-05
CN1715310A (zh) 2006-01-04
TW200613521A (en) 2006-05-01
CN100355819C (zh) 2007-12-19
TWI394820B (zh) 2013-05-01

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