TWI394820B - 化學機械研磨用組成物及其相關方法 - Google Patents

化學機械研磨用組成物及其相關方法 Download PDF

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Publication number
TWI394820B
TWI394820B TW094121113A TW94121113A TWI394820B TW I394820 B TWI394820 B TW I394820B TW 094121113 A TW094121113 A TW 094121113A TW 94121113 A TW94121113 A TW 94121113A TW I394820 B TWI394820 B TW I394820B
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TW
Taiwan
Prior art keywords
acid
composition
weight
copolymer
methacrylic
Prior art date
Application number
TW094121113A
Other languages
English (en)
Chinese (zh)
Other versions
TW200613521A (en
Inventor
法蘭西斯Ｊ 凱里
約翰 奎西
喬瑟夫Ｋ 索
王紅雨
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW200613521A publication Critical patent/TW200613521A/zh
Application granted granted Critical
Publication of TWI394820B publication Critical patent/TWI394820B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094121113A 2004-07-01 2005-06-24 化學機械研磨用組成物及其相關方法 TWI394820B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/882,567 US7384871B2 (en) 2004-07-01 2004-07-01 Chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
TW200613521A TW200613521A (en) 2006-05-01
TWI394820B true TWI394820B (zh) 2013-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121113A TWI394820B (zh) 2004-07-01 2005-06-24 化學機械研磨用組成物及其相關方法

Country Status (4)

Country Link
US (1) US7384871B2 (enExample)
JP (1) JP2006019746A (enExample)
CN (1) CN100355819C (enExample)
TW (1) TWI394820B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
JP2007088302A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属用研磨液及び化学的機械的研磨方法
KR100786949B1 (ko) 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
TW200801178A (en) * 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
US20100015807A1 (en) * 2006-12-22 2010-01-21 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition for Copper Comprising Zeolite
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8734204B2 (en) * 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
KR101674564B1 (ko) * 2009-01-05 2016-11-09 에프엔에스테크 주식회사 다층 화학-기계적 평탄화 패드
US8536106B2 (en) * 2010-04-14 2013-09-17 Ecolab Usa Inc. Ferric hydroxycarboxylate as a builder
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
JP6029895B2 (ja) * 2012-08-31 2016-11-24 株式会社フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
US9299585B2 (en) 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
KR20190057084A (ko) * 2016-09-29 2019-05-27 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 텅스텐을 위한 화학 기계적 연마 방법
WO2018058396A1 (en) * 2016-09-29 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
KR20190057330A (ko) * 2016-09-29 2019-05-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 텅스텐의 화학 기계적 연마 방법
KR102679492B1 (ko) * 2018-11-15 2024-07-01 솔브레인 주식회사 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법
US20230027528A1 (en) * 2020-12-10 2023-01-26 Hitachi High-Tech Corporation Semiconductor manufacturing method and semiconductor manufacturing apparatus
CN114561187B (zh) * 2022-03-07 2022-10-21 山东麦丰新材料科技股份有限公司 一种环保型乳化精磨液及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134442A (ja) * 2000-10-26 2002-05-10 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US20040065020A1 (en) * 2001-05-18 2004-04-08 Barry Weinstein Chemical mechanical polishing compositions and methods relating thereto

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002517593A (ja) 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP4538109B2 (ja) * 1999-02-18 2010-09-08 株式会社トッパンＴｄｋレーベル 化学機械研磨組成物
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP4832690B2 (ja) 1999-08-24 2011-12-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 絶縁体及び金属のｃｍｐ用組成物及びそれに関する方法
US7232529B1 (en) 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6605537B2 (en) * 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
KR20040002907A (ko) * 2001-04-12 2004-01-07 로델 홀딩스 인코포레이티드 계면활성제를 갖는 연마 조성물
EP1490897B1 (en) * 2002-03-25 2007-01-31 Rohm and Haas Electronic Materials CMP Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US20050136671A1 (en) * 2003-12-22 2005-06-23 Goldberg Wendy B. Compositions and methods for low downforce pressure polishing of copper

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134442A (ja) * 2000-10-26 2002-05-10 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US20040065020A1 (en) * 2001-05-18 2004-04-08 Barry Weinstein Chemical mechanical polishing compositions and methods relating thereto
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法

Also Published As

Publication number Publication date
JP2006019746A (ja) 2006-01-19
CN1715310A (zh) 2006-01-04
US7384871B2 (en) 2008-06-10
CN100355819C (zh) 2007-12-19
US20060000150A1 (en) 2006-01-05
TW200613521A (en) 2006-05-01

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