CN100355819C - 化学机械抛光组合物及有关的方法 - Google Patents

化学机械抛光组合物及有关的方法 Download PDF

Info

Publication number
CN100355819C
CN100355819C CNB2005100823705A CN200510082370A CN100355819C CN 100355819 C CN100355819 C CN 100355819C CN B2005100823705 A CNB2005100823705 A CN B2005100823705A CN 200510082370 A CN200510082370 A CN 200510082370A CN 100355819 C CN100355819 C CN 100355819C
Authority
CN
China
Prior art keywords
acid
weight
composition
ferrous metal
vinylformic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100823705A
Other languages
English (en)
Chinese (zh)
Other versions
CN1715310A (zh
Inventor
F·J·凯勒
J·匡西
J·K·索
王红雨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN1715310A publication Critical patent/CN1715310A/zh
Application granted granted Critical
Publication of CN100355819C publication Critical patent/CN100355819C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB2005100823705A 2004-07-01 2005-06-24 化学机械抛光组合物及有关的方法 Expired - Fee Related CN100355819C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/882,567 US7384871B2 (en) 2004-07-01 2004-07-01 Chemical mechanical polishing compositions and methods relating thereto
US10/882,567 2004-07-01

Publications (2)

Publication Number Publication Date
CN1715310A CN1715310A (zh) 2006-01-04
CN100355819C true CN100355819C (zh) 2007-12-19

Family

ID=35512461

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100823705A Expired - Fee Related CN100355819C (zh) 2004-07-01 2005-06-24 化学机械抛光组合物及有关的方法

Country Status (4)

Country Link
US (1) US7384871B2 (enExample)
JP (1) JP2006019746A (enExample)
CN (1) CN100355819C (enExample)
TW (1) TWI394820B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
JP2007088302A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属用研磨液及び化学的機械的研磨方法
KR100786949B1 (ko) * 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
TW200801178A (en) * 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
WO2008078909A1 (en) * 2006-12-22 2008-07-03 Techno Semichem Co., Ltd. Chemical mechanical polishing composition for copper comprising zeolite
KR100949250B1 (ko) * 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
EP2273537A4 (en) * 2008-04-15 2012-07-25 Hitachi Chemical Co Ltd POLISHING SOLUTION FOR METALLIC FILMS AND METHOD OF POLISHING USING THE SAME
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2010078566A1 (en) * 2009-01-05 2010-07-08 Innopad, Inc. Multi-layered chemical-mechanical planarization pad
US8536106B2 (en) * 2010-04-14 2013-09-17 Ecolab Usa Inc. Ferric hydroxycarboxylate as a builder
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
JP6029895B2 (ja) * 2012-08-31 2016-11-24 株式会社フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
US9299585B2 (en) 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
WO2018058397A1 (en) * 2016-09-29 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10633557B2 (en) * 2016-09-29 2020-04-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP6936314B2 (ja) * 2016-09-29 2021-09-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法
KR102679492B1 (ko) * 2018-11-15 2024-07-01 솔브레인 주식회사 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법
WO2022123725A1 (ja) * 2020-12-10 2022-06-16 株式会社日立ハイテク 半導体製造方法及び半導体製造装置
CN114561187B (zh) * 2022-03-07 2022-10-21 山东麦丰新材料科技股份有限公司 一种环保型乳化精磨液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001014496A1 (en) * 1999-08-24 2001-03-01 Rodel Holdings, Inc. Compositions for insulator and metal cmp and methods relating thereto
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP4538109B2 (ja) * 1999-02-18 2010-09-08 株式会社トッパンＴｄｋレーベル 化学機械研磨組成物
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7232529B1 (en) 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP4951808B2 (ja) * 2000-10-26 2012-06-13 日立化成工業株式会社 金属用研磨液及び研磨方法
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
KR20040002907A (ko) * 2001-04-12 2004-01-07 로델 홀딩스 인코포레이티드 계면활성제를 갖는 연마 조성물
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP4560294B2 (ja) 2002-03-25 2010-10-13 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タンタルバリア除去溶液
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US20050136671A1 (en) * 2003-12-22 2005-06-23 Goldberg Wendy B. Compositions and methods for low downforce pressure polishing of copper

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001014496A1 (en) * 1999-08-24 2001-03-01 Rodel Holdings, Inc. Compositions for insulator and metal cmp and methods relating thereto
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法

Also Published As

Publication number Publication date
US7384871B2 (en) 2008-06-10
US20060000150A1 (en) 2006-01-05
CN1715310A (zh) 2006-01-04
TW200613521A (en) 2006-05-01
JP2006019746A (ja) 2006-01-19
TWI394820B (zh) 2013-05-01

Similar Documents

Publication Publication Date Title
CN100355819C (zh) 化学机械抛光组合物及有关的方法
CN100355820C (zh) 化学机械抛光组合物及有关的方法
CN100369998C (zh) 可调控的去除阻隔物的抛光浆料
US8540893B2 (en) Chemical mechanical polishing composition and methods relating thereto
TWI478227B (zh) 用於基板之化學機械研磨之方法
US20050104048A1 (en) Compositions and methods for polishing copper
US7086935B2 (en) Cellulose-containing polishing compositions and methods relating thereto
CN101525522B (zh) 低污染抛光组合物
JP2012004588A (ja) 銅基材に有益な化学機械的研磨スラリー
US20050136671A1 (en) Compositions and methods for low downforce pressure polishing of copper
EP1724819B1 (en) Polishing agent and polishing method
CN101515546B (zh) 一种抛光包含铜互连金属的图案化半导体晶片的方法
US7435356B2 (en) Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7497967B2 (en) Compositions and methods for polishing copper
JP2007180534A (ja) 半導体層を研磨するための組成物
US20070298611A1 (en) Selective barrier slurry for chemical mechanical polishing

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071219

Termination date: 20200624