JP2006013422A - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 30
- 125000006850 spacer group Chemical group 0.000 claims abstract description 27
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 150000004767 nitrides Chemical class 0.000 claims abstract description 22
- 210000000746 body region Anatomy 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 32
- 239000007772 electrode material Substances 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021474 group 7 element Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 230000010354 integration Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
【解決手段】本発明に係る半導体素子の製造方法は、シリコン基板上に、パッド酸化膜及びパッド窒化膜を順次形成するステップと、前記パッド窒化膜とパッド酸化膜及びシリコン基板をエッチングして素子分離領域にトレンチを形成するステップと、トレンチの側壁に絶縁膜スペーサを形成するステップと、前記絶縁膜スペーサ及びエッチングされたパッド窒化膜をエッチング障壁として横方向エッチングを行い、前記シリコン基板のアクティブ領域に空きの空間を形成するステップと、前記絶縁膜スペーサを除去するステップと、前記空間の表面上に絶縁膜を介して基板のボディ領域の電位を調節するための外部電圧が印加される導電性電極を形成するステップと、前記トレンチ内に酸化膜を埋め込みさせて素子分離膜を形成するステップと、を含む。
【選択図】図1
Description
(Vt)が得らえる半導体素子及びその製造方法に関する。
また、本発明は最適のしきい電圧に調節することにより所望の素子特性を確保することができる半導体素子及びその製造方法を提供することを目的とする。
また、前記シリコン基板のアクティブ領域に空き空間を形成するステップ後で、前記絶縁膜スペーサを除去するステップ前に、前記露出したトレンチの底面の基板の表面にフィールドストップイオン注入を行うテップを更に含む。
図2に示すように、通常のSTI(Shallow Trench Isolation)工程によってシリコン基板1上にパッド酸化膜2とパッド窒化膜3を順次形成した後、パッド窒化膜3上に有機質(organic)の反射防止膜4を形成する。その後、反射防止膜4上に感光膜塗布、露光及び現象工程を順次行なって、素子分離領域を露出させる第1感光膜パターン5を形成する。ここで、感光膜はCOMA(Cycloolefin−Maleic Anhydride)またはアクリレ−ト(acrylate)系統のポリマーを使用する。
ここで、絶縁膜スペーサ7aは後述するように、シリコン基板1を特定の面方向にエッチングする後続工程において、エッチング障壁として用いるために形成したものである。即ち、通常の素子分離工程では、トレンチ6の形成後に側壁酸化(Wall oxidation)工程、窒化膜蒸着工程、ライナー酸化(Liner Oxidation)工程及びトレンチ埋め込み工程を順次行って、素子分離膜を形成する。一方、本発明では後続工程で行なわれるウェットまたはドライエッチング及び酸化工程のために、トレンチ底面の基板部分を露出させるオープン(open)工程を追加する。
次に、絶縁膜10上に外部電圧を印加するための電極物質膜11を蒸着する。電極物質膜11としては、ドーピングされたポリシリコンを適用することが好ましく、その他にAl、Cuなどの金属も適用可能である。
以後、図示してはいないが、公知の一連のDRAM製造工程を行って、本発明に係る半導体素子が完成する。
2 パッド酸化膜
3 パッド窒化膜
4 反射防止膜
5 第1感光膜パターン
6 トレンチ
7 スペーサ用絶縁膜
7a 絶縁膜スペーサ
8 空き空間
9 イオン注入層
10 絶縁膜
11 電極物質膜
11a 導電性電極
12 感光膜
13 素子分離膜
14 ゲート酸化膜
15 ゲート導電膜
16 ハードマスク膜
17 ゲートスペーサ
20 ゲート
Claims (20)
- アクティブ領域を規定する素子分離膜を備えたシリコン基板と、前記シリコン基板のアクティブ領域上に形成されたゲート及び前記ゲート両側の基板の表面に形成された接合領域を含み、
前記シリコン基板は素子分離膜と接したアクティブ領域の内部に空き空間を備え、前記空き空間表面には絶縁膜を介して外部から基板のボディの電位を調節するための電圧が印加される導電性電極が形成されたことを特徴とする半導体素子。 - 前記素子分離膜の下の基板に形成されたフィールドストップイオン注入層を更に含むことを特徴とする請求項1記載の半導体素子。
- 素子分離領域とアクティブ領域とに区画されるシリコン基板上にパッド酸化膜及びパッド窒化膜を順次形成するステップと、
前記パッド窒化膜とパッド酸化膜及びシリコン基板をエッチングして素子分離領域にトレンチを形成するステップと、
前記エッチングされたパッド窒化膜とパッド酸化膜とを含んだトレンチの側壁に絶縁膜スペーサを形成するステップと、
前記絶縁膜スペーサ及びエッチングされたパッド窒化膜をエッチング障壁として、露出したトレンチの底面のシリコン基板部分からアクティブ領域に向かって横方向エッチングを行い、前記シリコン基板のアクティブ領域に空き空間を形成するステップと、
前記絶縁膜スペーサを除去するステップと、
前記空き空間の表面上に絶縁膜を介して基板のボディ領域の電位を調節するための外部電圧が印加される導電性電極を形成するステップと、
前記トレンチ内に酸化膜を埋め込み、素子分離膜を形成するステップと、
前記シリコン基板上にゲートを形成するステップと、
前記ゲートの両側の基板の表面に接合領域を形成するステップとを含むことを特徴とする半導体素子の製造方法。 - 前記パッド窒化膜とパッド酸化膜のエッチングは、CF4/CHF3/O2の混合ガスを使用して行うことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記CF4ガスの流量は、10〜100sccm、前記CHF3ガスの流量は10〜300sccm、そして、前記O2ガスの流量は10〜70sccmとすることを特徴とする請求項4記載の半導体素子の製造方法。
- 前記トレンチを形成するためのシリコン基板のエッチングは、Cl2/HBrの混合ガスを使用して行うことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記Cl2ガスの流量は10〜100sccm、そして、HBrガスの流量は10〜100sccmとすることを特徴とする請求項6記載の半導体素子の製造方法。
- 前記トレンチは1000〜3000Åの深さに形成することを特徴とする請求項3記載の半導体素子の製造方法。
- 前記絶縁膜スペーサを形成するステップ後で、シリコン基板のアクティブ領域に空き空間を形成するステップ前に、表面の異質物が除去されるように水素雰囲気で800〜1000℃で熱処理を行うステップを更に含むことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記シリコン基板のアクティブ領域に空き空間を形成するステップは、プラズマを利用したドライエッチング、化学薬品を用いたウェットエッチング及び7族元素と水素を含んだ混合ガスを用いたドライエッチングで構成されたグループから選択されるいずれかの一つの工程で行うことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記シリコン基板のアクティブ領域に空き空間を形成するステップは、HClガスとH2ガスの混合ガスを使用して行うことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記HClガスとH2ガスはエッチング速度及びエッチングプロファイルを調節するために、各々その流量を0.1〜1slm及び10〜50slmで調節することを特徴とする請求項11記載の半導体素子の製造方法。
- 前記シリコン基板のアクティブ領域に空き空間を形成するステップは、700〜1000℃の温度で行うことを特徴とする請求項11記載の半導体素子の製造方法。
- 前記シリコン基板のアクティブ領域に空き空間を形成するステップ後で、前記絶縁膜スペーサを除去するステップ前に、前記露出したトレンチの底面の基板の表面にフィールドストップイオン注入を行うステップを更に含むことを特徴とする請求項3記載の半導体素子の製造方法。
- 前記空間の表面上に絶縁膜を介して導電性電極を形成するステップは、
前記絶縁膜スペーサが除去された基板結果物上に絶縁膜と電極物質膜を順次形成するステップと、
前記電極物質膜上に絶縁膜を形成するステップと、
前記電極物質膜上の絶縁膜をエッチバックしてエッチングされたパッド窒化膜上の電極物質膜部分を露出させるステップと、
前記露出した電極物質膜部分をエッチング除去するステップと、
前記残留された電極物質膜上の絶縁膜を除去するステップとからなることを特徴とする請求項3に記載の半導体素子の製造方法。 - 前記電極物質膜上の絶縁膜はSOG膜または感光膜であることを特徴とする請求項15記載の半導体素子の製造方法。
- 前記露出した電極物質膜部分をエッチング除去するステップはCl2/HBrの混合ガスを使用して行うことを特徴とする請求項15記載の半導体素子の製造方法。
- 前記Cl2ガスとHBrガスの流量は、各々10〜100sccmとすることを特徴とする請求項17記載の半導体素子の製造方法。
- 前記露出した電極物質膜部分をエッチング除去するステップは酢酸、硝酸及びNH4OHの混合溶液を使用して遂行することを特徴とする請求項15記載の半導体素子の製造方法。
- 前記ゲートは、ゲート酸化膜とゲート導電膜及びハードマスク膜の積層構造で形成すると共に、両側壁にゲートスペーサを備えるように形成することを特徴とする請求項3記載の半導体素子の製造方法。
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JP2008091614A (ja) * | 2006-10-02 | 2008-04-17 | Toshiba Corp | 半導体装置およびその製造方法 |
US7919800B2 (en) * | 2007-02-26 | 2011-04-05 | Micron Technology, Inc. | Capacitor-less memory cells and cell arrays |
KR100853485B1 (ko) * | 2007-03-19 | 2008-08-21 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
US7790529B2 (en) | 2007-05-08 | 2010-09-07 | Micron Technology, Inc. | Methods of forming memory arrays and semiconductor constructions |
JP5525156B2 (ja) * | 2008-12-09 | 2014-06-18 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置、および該半導体装置の製造方法 |
US8816503B2 (en) * | 2011-08-29 | 2014-08-26 | Infineon Technologies Austria Ag | Semiconductor device with buried electrode |
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