JP2006332583A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP2006332583A JP2006332583A JP2005354323A JP2005354323A JP2006332583A JP 2006332583 A JP2006332583 A JP 2006332583A JP 2005354323 A JP2005354323 A JP 2005354323A JP 2005354323 A JP2005354323 A JP 2005354323A JP 2006332583 A JP2006332583 A JP 2006332583A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- 238000010405 reoxidation reaction Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】活性領域を画定する素子分離膜22を備える半導体基板21の表面に第1酸化膜23aを形成する工程と、第1酸化膜23aの表面に第2酸化膜23bを形成する工程と、第2酸化膜23bの表面に、開口部を備える感光膜パターン100を形成する工程と、第2酸化膜23b内に、アンダーカットが形成されるように第2酸化膜23bを等方性エッチングする工程と、感光膜パターン100を除去する工程と、第2酸化膜23bの表面にゲート導電膜24、25及びハードマスク26を順次形成する工程と、ハードマスク26、ゲート導電膜24、25、第2酸化膜23b、及び第1酸化膜23aを順次エッチングし、中央部よりも端部の厚さがより厚いゲート酸化膜23を有するゲート27を形成する工程とを含む。
【選択図】図2E
Description
22 素子分離膜
23a 第1酸化膜
23b 第2酸化膜
23c 第3酸化膜
23 ゲート酸化膜
24 ポリシリコン膜
25 タングステンシリサイド膜
26 ハードマスク窒化膜
27 ゲート
28 スペーサ
29 ソース/ドレイン領域
100 感光膜パターン
Claims (9)
- 活性領域を画定する素子分離膜を備える半導体基板の前記活性領域の上部表面に第1酸化膜を形成する第1ステップと、
前記第1酸化膜の上部表面に第2酸化膜を形成する第2ステップと、
前記第2酸化膜の上部表面に、ゲート形成領域を露出させるための開口部を備える感光膜パターンを形成する第3ステップと、
前記感光膜パターン下部の前記第2酸化膜内に、アンダーカットが形成されるように前記第2酸化膜を等方性エッチングする第4ステップと、
前記感光膜パターンを除去する第5ステップと、
等方性エッチングされた前記第2酸化膜の上部表面にゲート導電膜及びハードマスクを順次形成する第6ステップと、
前記ハードマスク、前記ゲート導電膜、前記第2酸化膜、及び前記第1酸化膜を順次エッチングすることにより、等方性エッチングされた前記第2酸化膜を少なくとも含む、中央部よりも端部の厚さがより厚いゲート酸化膜を有するゲートを形成する第7ステップとを含むことを特徴とする半導体素子の製造方法。 - 前記第1酸化膜を酸化処理によって形成し、前記第2酸化膜を蒸着によって形成することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記第4ステップと前記第5ステップとの間に、前記第2酸化膜を等方性エッチングする前記第4ステップ時に発生したエッチングダメージを回復するための再酸化処理を行う第8ステップを更に含むことを特徴とする請求項1に記載の半導体素子の製造方法。
- 再酸化処理を行う前記第8ステップによって、等方性エッチングされた前記第2酸化膜の上部表面に第3酸化膜を形成することを特徴とする請求項3に記載の半導体素子の製造方法。
- 前記ゲート導電膜を、ポリシリコン膜と金属シリサイド膜との積層膜、若しくはポリシリコン膜と金属膜との積層膜のいずれかに形成することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記ゲート導電膜を、
前記ポリシリコン膜を蒸着によって形成し、
前記ポリシリコン膜の上部表面を平坦化し、
前記金属シリサイド膜若しくは前記金属膜を、平坦化された前記ポリシリコン膜の上部表面に蒸着することにより形成することを特徴とする請求項5に記載の半導体素子の製造方法。 - 前記第1酸化膜を、約750℃〜約900℃の温度、並びにO2、混合されたO2及びN2、又はH2Oを含む雰囲気下で熱酸化処理によって形成することを特徴とする請求項2に記載の半導体素子の製造方法。
- 前記第2酸化膜を、テトラエトキシシラン(TEOS)系、又は高温熱酸化(HTO)膜の材料となる物質を大気圧以下の圧力で蒸着することにより形成することを特徴とする請求項2に記載の半導体素子の製造方法。
- 前記第3酸化膜を、約750℃〜約900℃の温度、並びにO2、混合されたO2及びN2、又はH2Oを含む雰囲気下で熱酸化処理によって形成することを特徴とする請求項4に記載の半導体素子の製造方法。
Applications Claiming Priority (1)
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KR1020050045074A KR100596802B1 (ko) | 2005-05-27 | 2005-05-27 | 반도체 소자의 제조방법 |
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JP2006332583A true JP2006332583A (ja) | 2006-12-07 |
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JP2005354323A Pending JP2006332583A (ja) | 2005-05-27 | 2005-12-08 | 半導体素子の製造方法 |
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US (1) | US7378322B2 (ja) |
JP (1) | JP2006332583A (ja) |
KR (1) | KR100596802B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100800922B1 (ko) | 2006-12-27 | 2008-02-04 | 동부일렉트로닉스 주식회사 | 반도체 소자의 트랜지스터 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58141575A (ja) * | 1982-02-18 | 1983-08-22 | Toshiba Corp | Mis型半導体装置の製造方法 |
JPS6421966A (en) * | 1987-07-16 | 1989-01-25 | Sanyo Electric Co | Semiconductor device |
JPH04112545A (ja) * | 1990-08-31 | 1992-04-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2000196083A (ja) * | 1998-12-24 | 2000-07-14 | Hyundai Electronics Ind Co Ltd | 半導体素子のゲ―ト電極形成方法 |
JP2002289851A (ja) * | 2001-01-26 | 2002-10-04 | Chartered Semiconductor Mfg Ltd | 高誘電率の領域と低誘電率の領域を有するトランジスタゲート誘電体を形成する方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661048A (en) * | 1995-03-21 | 1997-08-26 | Motorola, Inc. | Method of making an insulated gate semiconductor device |
US6743688B1 (en) * | 1998-01-05 | 2004-06-01 | Advanced Micro Devices, Inc. | High performance MOSFET with modulated channel gate thickness |
-
2005
- 2005-05-27 KR KR1020050045074A patent/KR100596802B1/ko not_active IP Right Cessation
- 2005-11-28 US US11/287,598 patent/US7378322B2/en not_active Expired - Fee Related
- 2005-12-08 JP JP2005354323A patent/JP2006332583A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58141575A (ja) * | 1982-02-18 | 1983-08-22 | Toshiba Corp | Mis型半導体装置の製造方法 |
JPS6421966A (en) * | 1987-07-16 | 1989-01-25 | Sanyo Electric Co | Semiconductor device |
JPH04112545A (ja) * | 1990-08-31 | 1992-04-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2000196083A (ja) * | 1998-12-24 | 2000-07-14 | Hyundai Electronics Ind Co Ltd | 半導体素子のゲ―ト電極形成方法 |
JP2002289851A (ja) * | 2001-01-26 | 2002-10-04 | Chartered Semiconductor Mfg Ltd | 高誘電率の領域と低誘電率の領域を有するトランジスタゲート誘電体を形成する方法 |
Also Published As
Publication number | Publication date |
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US7378322B2 (en) | 2008-05-27 |
KR100596802B1 (ko) | 2006-07-04 |
US20060270167A1 (en) | 2006-11-30 |
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