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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW086112541ApriorityCriticalpatent/TW332327B/en
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Publication of TW332327BpublicationCriticalpatent/TW332327B/en
A method for forming trench, it includes following steps: - From 1st dielectric on substrate; - Form 2nd dielectric on 1st dielectric; - Define substrate, 1st & 2nd dielectric, and form trench inside the substrate, 1st & 2nd dielectric; - Form 3rd dielectric on the side wall surface of trench; - Isotropic etching the bottom of trench, to enlarge the bottom of trench; - Form 4th dielectric on the surface of trench that is through isotropic etching; - Fill dielectric back into trench.
TW086112541A1997-09-011997-09-01The process for forming shallow trench
TW332327B
(en)