TW332327B - The process for forming shallow trench - Google Patents

The process for forming shallow trench

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Publication number
TW332327B
TW332327B TW086112541A TW86112541A TW332327B TW 332327 B TW332327 B TW 332327B TW 086112541 A TW086112541 A TW 086112541A TW 86112541 A TW86112541 A TW 86112541A TW 332327 B TW332327 B TW 332327B
Authority
TW
Taiwan
Prior art keywords
dielectric
trench
shallow trench
forming shallow
substrate
Prior art date
Application number
TW086112541A
Other languages
Chinese (zh)
Inventor
Jong-Jyh Liaw
Jinn-Yuan Lii
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086112541A priority Critical patent/TW332327B/en
Application granted granted Critical
Publication of TW332327B publication Critical patent/TW332327B/en

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Abstract

A method for forming trench, it includes following steps: - From 1st dielectric on substrate; - Form 2nd dielectric on 1st dielectric; - Define substrate, 1st & 2nd dielectric, and form trench inside the substrate, 1st & 2nd dielectric; - Form 3rd dielectric on the side wall surface of trench; - Isotropic etching the bottom of trench, to enlarge the bottom of trench; - Form 4th dielectric on the surface of trench that is through isotropic etching; - Fill dielectric back into trench.
TW086112541A 1997-09-01 1997-09-01 The process for forming shallow trench TW332327B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086112541A TW332327B (en) 1997-09-01 1997-09-01 The process for forming shallow trench

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086112541A TW332327B (en) 1997-09-01 1997-09-01 The process for forming shallow trench

Publications (1)

Publication Number Publication Date
TW332327B true TW332327B (en) 1998-05-21

Family

ID=58262771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112541A TW332327B (en) 1997-09-01 1997-09-01 The process for forming shallow trench

Country Status (1)

Country Link
TW (1) TW332327B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301207B2 (en) 2004-06-21 2007-11-27 Hynix Semiconductor Inc. Semiconductor device capable of threshold voltage adjustment by applying an external voltage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301207B2 (en) 2004-06-21 2007-11-27 Hynix Semiconductor Inc. Semiconductor device capable of threshold voltage adjustment by applying an external voltage

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