JP2005534186A5 - - Google Patents

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Publication number
JP2005534186A5
JP2005534186A5 JP2004524591A JP2004524591A JP2005534186A5 JP 2005534186 A5 JP2005534186 A5 JP 2005534186A5 JP 2004524591 A JP2004524591 A JP 2004524591A JP 2004524591 A JP2004524591 A JP 2004524591A JP 2005534186 A5 JP2005534186 A5 JP 2005534186A5
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JP
Japan
Prior art keywords
layer
array
region
intrinsic
wafer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004524591A
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English (en)
Japanese (ja)
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JP2005534186A (ja
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Publication date
Priority claimed from US10/207,422 external-priority patent/US6927383B2/en
Application filed filed Critical
Publication of JP2005534186A publication Critical patent/JP2005534186A/ja
Publication of JP2005534186A5 publication Critical patent/JP2005534186A5/ja
Pending legal-status Critical Current

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JP2004524591A 2002-07-26 2003-07-10 放射線硬化された可視ｐ−ｉ−ｎ型検出器 Pending JP2005534186A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/207,422 US6927383B2 (en) 2002-07-26 2002-07-26 Radiation hardened visible P-I-N detector
PCT/US2003/021820 WO2004012241A2 (en) 2002-07-26 2003-07-10 Radiation hardened visible p-i-n detector

Publications (2)

Publication Number Publication Date
JP2005534186A JP2005534186A (ja) 2005-11-10
JP2005534186A5 true JP2005534186A5 (https=) 2006-08-10

Family

ID=30770429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524591A Pending JP2005534186A (ja) 2002-07-26 2003-07-10 放射線硬化された可視ｐ−ｉ−ｎ型検出器

Country Status (5)

Country Link
US (1) US6927383B2 (https=)
JP (1) JP2005534186A (https=)
KR (1) KR100709645B1 (https=)
TW (1) TWI229190B (https=)
WO (1) WO2004012241A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718963B2 (en) * 2007-08-20 2010-05-18 Honeywell International Inc. Passive solid state ionizing radiation sensor
US9704907B1 (en) * 2016-04-08 2017-07-11 Raytheon Company Direct read pixel alignment
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
CN113544547B (zh) * 2019-03-29 2023-11-10 深圳帧观德芯科技有限公司 辐射检测装置及其制备方法
WO2020198929A1 (en) * 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Apparatuses for detecting radiation and their methods of making

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
JPS59501033A (ja) * 1982-06-07 1984-06-07 ヒユ−ズ・エアクラフト・カンパニ− 阻止された不純物帯を有する背面照射型の赤外線検出器
JPH04107968A (ja) * 1990-08-28 1992-04-09 Fujitsu Ltd 半導体装置およびその製造方法
JP3137431B2 (ja) * 1991-06-13 2001-02-19 セイコーインスツルメンツ株式会社 半導体集積回路装置
KR940009594B1 (ko) * 1991-09-20 1994-10-15 한국전기통신공사 고속 광통신용 pin 포토다이오드의 제조방법
JPH05259427A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 赤外線検知装置およびその製造方法
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
US5600130A (en) * 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5670817A (en) 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
US5798558A (en) 1995-06-27 1998-08-25 Mission Research Corporation Monolithic x-ray image detector and method of manufacturing
US6541755B1 (en) 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP3778406B2 (ja) * 1999-05-07 2006-05-24 富士通株式会社 フォトセンサおよびイメージセンサ
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
DE10392637B4 (de) * 2002-05-10 2014-09-04 Hamamatsu Photonics K.K. Hintergrundbeleuchtetes Photodioden-Array und Verfahren zum Herstellen desselben

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