JP2007521657A5 - - Google Patents

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Publication number
JP2007521657A5
JP2007521657A5 JP2006517765A JP2006517765A JP2007521657A5 JP 2007521657 A5 JP2007521657 A5 JP 2007521657A5 JP 2006517765 A JP2006517765 A JP 2006517765A JP 2006517765 A JP2006517765 A JP 2006517765A JP 2007521657 A5 JP2007521657 A5 JP 2007521657A5
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JP
Japan
Prior art keywords
substrate
conductivity type
regions
photodiode array
matrix
Prior art date
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Pending
Application number
JP2006517765A
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English (en)
Japanese (ja)
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JP2007521657A (ja
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Publication date
Priority claimed from US10/606,053 external-priority patent/US6762473B1/en
Application filed filed Critical
Publication of JP2007521657A publication Critical patent/JP2007521657A/ja
Publication of JP2007521657A5 publication Critical patent/JP2007521657A5/ja
Pending legal-status Critical Current

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JP2006517765A 2003-06-25 2004-06-22 超薄型裏面照射フォトダイオード・アレイの構造と製造方法 Pending JP2007521657A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/606,053 US6762473B1 (en) 2003-06-25 2003-06-25 Ultra thin back-illuminated photodiode array structures and fabrication methods
PCT/US2004/020835 WO2005001941A2 (en) 2003-06-25 2004-06-22 Ultra thin back-illuminated photodiode array structures and fabrication methods

Publications (2)

Publication Number Publication Date
JP2007521657A JP2007521657A (ja) 2007-08-02
JP2007521657A5 true JP2007521657A5 (https=) 2007-09-13

Family

ID=32682711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006517765A Pending JP2007521657A (ja) 2003-06-25 2004-06-22 超薄型裏面照射フォトダイオード・アレイの構造と製造方法

Country Status (7)

Country Link
US (2) US6762473B1 (https=)
EP (2) EP1636856B1 (https=)
JP (1) JP2007521657A (https=)
CN (1) CN100533775C (https=)
AT (1) ATE531082T1 (https=)
IL (1) IL172495A0 (https=)
WO (1) WO2005001941A2 (https=)

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