CN100533775C - 超薄背发光光电二极管阵列结构及制造方法 - Google Patents

超薄背发光光电二极管阵列结构及制造方法 Download PDF

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Publication number
CN100533775C
CN100533775C CNB2004800247278A CN200480024727A CN100533775C CN 100533775 C CN100533775 C CN 100533775C CN B2004800247278 A CNB2004800247278 A CN B2004800247278A CN 200480024727 A CN200480024727 A CN 200480024727A CN 100533775 C CN100533775 C CN 100533775C
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substrate
conductivity type
regions
photodiode array
matrix
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Chinese (zh)
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CN1842921A (zh
Inventor
A·O·古什查
C·希克斯
R·A·梅茨勒
M·卡拉特斯基
E·巴特利
D·图尔博尔
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Silicon Light Co
SEMICOA
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SEMICOA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CNB2004800247278A 2003-06-25 2004-06-22 超薄背发光光电二极管阵列结构及制造方法 Expired - Fee Related CN100533775C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/606,053 US6762473B1 (en) 2003-06-25 2003-06-25 Ultra thin back-illuminated photodiode array structures and fabrication methods
US10/606,053 2003-06-25

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CN1842921A CN1842921A (zh) 2006-10-04
CN100533775C true CN100533775C (zh) 2009-08-26

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US (2) US6762473B1 (https=)
EP (2) EP1636856B1 (https=)
JP (1) JP2007521657A (https=)
CN (1) CN100533775C (https=)
AT (1) ATE531082T1 (https=)
IL (1) IL172495A0 (https=)
WO (1) WO2005001941A2 (https=)

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US7902540B2 (en) * 2008-05-21 2011-03-08 International Business Machines Corporation Fast P-I-N photodetector with high responsitivity
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US20040262652A1 (en) 2004-12-30
US7112465B2 (en) 2006-09-26
CN1842921A (zh) 2006-10-04
WO2005001941A3 (en) 2005-03-10
JP2007521657A (ja) 2007-08-02
WO2005001941A2 (en) 2005-01-06
EP1636856B1 (en) 2011-10-26
EP2270873A2 (en) 2011-01-05
IL172495A0 (en) 2006-04-10
ATE531082T1 (de) 2011-11-15
US6762473B1 (en) 2004-07-13
EP2270873A3 (en) 2012-03-28
EP1636856A2 (en) 2006-03-22

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