JP2007521657A - 超薄型裏面照射フォトダイオード・アレイの構造と製造方法 - Google Patents

超薄型裏面照射フォトダイオード・アレイの構造と製造方法 Download PDF

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JP2007521657A
JP2007521657A JP2006517765A JP2006517765A JP2007521657A JP 2007521657 A JP2007521657 A JP 2007521657A JP 2006517765 A JP2006517765 A JP 2006517765A JP 2006517765 A JP2006517765 A JP 2006517765A JP 2007521657 A JP2007521657 A JP 2007521657A
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substrate
conductivity type
regions
photodiode array
matrix
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JP2007521657A5 (https=
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ゴーシュチャ，アレキサンダー・オー
ヒックス，クリス
メッツラー，リチャード・エイ
カラットスカイ，マーク
バートリー，エディ
ツルブレ，ダン
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セミコア
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
JP2006517765A 2003-06-25 2004-06-22 超薄型裏面照射フォトダイオード・アレイの構造と製造方法 Pending JP2007521657A (ja)

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Application Number Priority Date Filing Date Title
US10/606,053 US6762473B1 (en) 2003-06-25 2003-06-25 Ultra thin back-illuminated photodiode array structures and fabrication methods
PCT/US2004/020835 WO2005001941A2 (en) 2003-06-25 2004-06-22 Ultra thin back-illuminated photodiode array structures and fabrication methods

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JP2007521657A true JP2007521657A (ja) 2007-08-02
JP2007521657A5 JP2007521657A5 (https=) 2007-09-13

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US (2) US6762473B1 (https=)
EP (2) EP1636856B1 (https=)
JP (1) JP2007521657A (https=)
CN (1) CN100533775C (https=)
AT (1) ATE531082T1 (https=)
IL (1) IL172495A0 (https=)
WO (1) WO2005001941A2 (https=)

Cited By (3)

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JP2024056782A (ja) * 2015-07-17 2024-04-23 株式会社半導体エネルギー研究所 撮像装置
JP2024100871A (ja) * 2015-06-19 2024-07-26 株式会社半導体エネルギー研究所 撮像装置
JP2024103708A (ja) * 2014-10-24 2024-08-01 株式会社半導体エネルギー研究所 撮像装置及び電子機器

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JP2024103708A (ja) * 2014-10-24 2024-08-01 株式会社半導体エネルギー研究所 撮像装置及び電子機器
JP7705984B2 (ja) 2014-10-24 2025-07-10 株式会社半導体エネルギー研究所 撮像装置及び電子機器
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US20040262652A1 (en) 2004-12-30
US7112465B2 (en) 2006-09-26
CN1842921A (zh) 2006-10-04
WO2005001941A3 (en) 2005-03-10
WO2005001941A2 (en) 2005-01-06
EP1636856B1 (en) 2011-10-26
EP2270873A2 (en) 2011-01-05
IL172495A0 (en) 2006-04-10
ATE531082T1 (de) 2011-11-15
US6762473B1 (en) 2004-07-13
CN100533775C (zh) 2009-08-26
EP2270873A3 (en) 2012-03-28
EP1636856A2 (en) 2006-03-22

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