TWI229190B - Radiation hardened visible P-I-N detector - Google Patents

Radiation hardened visible P-I-N detector Download PDF

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Publication number
TWI229190B
TWI229190B TW092119282A TW92119282A TWI229190B TW I229190 B TWI229190 B TW I229190B TW 092119282 A TW092119282 A TW 092119282A TW 92119282 A TW92119282 A TW 92119282A TW I229190 B TWI229190 B TW I229190B
Authority
TW
Taiwan
Prior art keywords
layer
type
array
wafer
forming
Prior art date
Application number
TW092119282A
Other languages
English (en)
Chinese (zh)
Other versions
TW200415359A (en
Inventor
Andrew G Toth
Le T Pham
Jerry R Cripe
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of TW200415359A publication Critical patent/TW200415359A/zh
Application granted granted Critical
Publication of TWI229190B publication Critical patent/TWI229190B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW092119282A 2002-07-26 2003-07-15 Radiation hardened visible P-I-N detector TWI229190B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/207,422 US6927383B2 (en) 2002-07-26 2002-07-26 Radiation hardened visible P-I-N detector

Publications (2)

Publication Number Publication Date
TW200415359A TW200415359A (en) 2004-08-16
TWI229190B true TWI229190B (en) 2005-03-11

Family

ID=30770429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092119282A TWI229190B (en) 2002-07-26 2003-07-15 Radiation hardened visible P-I-N detector

Country Status (5)

Country Link
US (1) US6927383B2 (https=)
JP (1) JP2005534186A (https=)
KR (1) KR100709645B1 (https=)
TW (1) TWI229190B (https=)
WO (1) WO2004012241A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788642B (zh) * 2019-03-29 2023-01-01 大陸商深圳幀觀德芯科技有限公司 輻射檢測裝置及其製備方法
TWI819204B (zh) * 2019-03-29 2023-10-21 大陸商深圳幀觀德芯科技有限公司 輻射檢測器及其製備方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718963B2 (en) * 2007-08-20 2010-05-18 Honeywell International Inc. Passive solid state ionizing radiation sensor
US9704907B1 (en) * 2016-04-08 2017-07-11 Raytheon Company Direct read pixel alignment
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
JPS59501033A (ja) * 1982-06-07 1984-06-07 ヒユ−ズ・エアクラフト・カンパニ− 阻止された不純物帯を有する背面照射型の赤外線検出器
JPH04107968A (ja) * 1990-08-28 1992-04-09 Fujitsu Ltd 半導体装置およびその製造方法
JP3137431B2 (ja) * 1991-06-13 2001-02-19 セイコーインスツルメンツ株式会社 半導体集積回路装置
KR940009594B1 (ko) * 1991-09-20 1994-10-15 한국전기통신공사 고속 광통신용 pin 포토다이오드의 제조방법
JPH05259427A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 赤外線検知装置およびその製造方法
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
US5600130A (en) * 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5670817A (en) 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
US5798558A (en) 1995-06-27 1998-08-25 Mission Research Corporation Monolithic x-ray image detector and method of manufacturing
US6541755B1 (en) 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP3778406B2 (ja) * 1999-05-07 2006-05-24 富士通株式会社 フォトセンサおよびイメージセンサ
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
DE10392637B4 (de) * 2002-05-10 2014-09-04 Hamamatsu Photonics K.K. Hintergrundbeleuchtetes Photodioden-Array und Verfahren zum Herstellen desselben

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788642B (zh) * 2019-03-29 2023-01-01 大陸商深圳幀觀德芯科技有限公司 輻射檢測裝置及其製備方法
TWI819204B (zh) * 2019-03-29 2023-10-21 大陸商深圳幀觀德芯科技有限公司 輻射檢測器及其製備方法
US11815633B2 (en) 2019-03-29 2023-11-14 Shenzhen Xpectvision Technology Co., Ltd. Apparatuses for radiation detection and methods of making them
TWI853714B (zh) * 2019-03-29 2024-08-21 大陸商深圳幀觀德芯科技有限公司 輻射檢測器及其製備方法

Also Published As

Publication number Publication date
US6927383B2 (en) 2005-08-09
WO2004012241A2 (en) 2004-02-05
WO2004012241A3 (en) 2004-04-22
TW200415359A (en) 2004-08-16
JP2005534186A (ja) 2005-11-10
KR20050029129A (ko) 2005-03-24
US20040016872A1 (en) 2004-01-29
KR100709645B1 (ko) 2007-04-23

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