JP2005534186A - 放射線硬化された可視ｐ−ｉ−ｎ型検出器 - Google Patents

放射線硬化された可視ｐ−ｉ−ｎ型検出器 Download PDF

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Publication number
JP2005534186A
JP2005534186A JP2004524591A JP2004524591A JP2005534186A JP 2005534186 A JP2005534186 A JP 2005534186A JP 2004524591 A JP2004524591 A JP 2004524591A JP 2004524591 A JP2004524591 A JP 2004524591A JP 2005534186 A JP2005534186 A JP 2005534186A
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array
wafer
region
intrinsic
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Japanese (ja)
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JP2005534186A5 (https=
Inventor
トス、アンドリュー・ジー
ファム、レ・ティー
クリペ、ジェリー・アール
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Raytheon Co
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Raytheon Co
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Publication of JP2005534186A publication Critical patent/JP2005534186A/ja
Publication of JP2005534186A5 publication Critical patent/JP2005534186A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2004524591A 2002-07-26 2003-07-10 放射線硬化された可視ｐ−ｉ−ｎ型検出器 Pending JP2005534186A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/207,422 US6927383B2 (en) 2002-07-26 2002-07-26 Radiation hardened visible P-I-N detector
PCT/US2003/021820 WO2004012241A2 (en) 2002-07-26 2003-07-10 Radiation hardened visible p-i-n detector

Publications (2)

Publication Number Publication Date
JP2005534186A true JP2005534186A (ja) 2005-11-10
JP2005534186A5 JP2005534186A5 (https=) 2006-08-10

Family

ID=30770429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524591A Pending JP2005534186A (ja) 2002-07-26 2003-07-10 放射線硬化された可視ｐ−ｉ−ｎ型検出器

Country Status (5)

Country Link
US (1) US6927383B2 (https=)
JP (1) JP2005534186A (https=)
KR (1) KR100709645B1 (https=)
TW (1) TWI229190B (https=)
WO (1) WO2004012241A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180129900A (ko) * 2016-04-08 2018-12-05 레이던 컴퍼니 직접 판독 픽셀 정렬

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718963B2 (en) * 2007-08-20 2010-05-18 Honeywell International Inc. Passive solid state ionizing radiation sensor
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
CN113544547B (zh) * 2019-03-29 2023-11-10 深圳帧观德芯科技有限公司 辐射检测装置及其制备方法
WO2020198929A1 (en) * 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Apparatuses for detecting radiation and their methods of making

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553416A (en) * 1978-10-11 1980-04-18 Secr Defence Brit Improvement of method of manufacturing semiconductor device
JPS59501033A (ja) * 1982-06-07 1984-06-07 ヒユ−ズ・エアクラフト・カンパニ− 阻止された不純物帯を有する背面照射型の赤外線検出器
JPH04107968A (ja) * 1990-08-28 1992-04-09 Fujitsu Ltd 半導体装置およびその製造方法
JPH05182909A (ja) * 1991-06-13 1993-07-23 Seiko Instr Inc 半導体集積回路装置
JPH05259427A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 赤外線検知装置およびその製造方法
JP2000323744A (ja) * 1999-05-07 2000-11-24 Fujitsu Ltd フォトセンサおよびイメージセンサ
JP2002083995A (ja) * 2000-07-27 2002-03-22 Aeg Infrarot-Module Gmbh 多波長フォトダイオード
WO2003096427A1 (fr) * 2002-05-10 2003-11-20 Hamamatsu Photonics K.K. Reseau de photodiode d'irradiation de face arriere et procede de production d'un tel reseau

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940009594B1 (ko) * 1991-09-20 1994-10-15 한국전기통신공사 고속 광통신용 pin 포토다이오드의 제조방법
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
US5600130A (en) * 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5670817A (en) 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
US5798558A (en) 1995-06-27 1998-08-25 Mission Research Corporation Monolithic x-ray image detector and method of manufacturing
US6541755B1 (en) 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553416A (en) * 1978-10-11 1980-04-18 Secr Defence Brit Improvement of method of manufacturing semiconductor device
JPS59501033A (ja) * 1982-06-07 1984-06-07 ヒユ−ズ・エアクラフト・カンパニ− 阻止された不純物帯を有する背面照射型の赤外線検出器
JPH04107968A (ja) * 1990-08-28 1992-04-09 Fujitsu Ltd 半導体装置およびその製造方法
JPH05182909A (ja) * 1991-06-13 1993-07-23 Seiko Instr Inc 半導体集積回路装置
JPH05259427A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 赤外線検知装置およびその製造方法
JP2000323744A (ja) * 1999-05-07 2000-11-24 Fujitsu Ltd フォトセンサおよびイメージセンサ
JP2002083995A (ja) * 2000-07-27 2002-03-22 Aeg Infrarot-Module Gmbh 多波長フォトダイオード
WO2003096427A1 (fr) * 2002-05-10 2003-11-20 Hamamatsu Photonics K.K. Reseau de photodiode d'irradiation de face arriere et procede de production d'un tel reseau

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180129900A (ko) * 2016-04-08 2018-12-05 레이던 컴퍼니 직접 판독 픽셀 정렬
JP2019512890A (ja) * 2016-04-08 2019-05-16 レイセオン カンパニー 直接読み取りピクセルアライメント
KR102153209B1 (ko) * 2016-04-08 2020-09-07 레이던 컴퍼니 직접 판독 픽셀 정렬

Also Published As

Publication number Publication date
US6927383B2 (en) 2005-08-09
WO2004012241A2 (en) 2004-02-05
WO2004012241A3 (en) 2004-04-22
TWI229190B (en) 2005-03-11
TW200415359A (en) 2004-08-16
KR20050029129A (ko) 2005-03-24
US20040016872A1 (en) 2004-01-29
KR100709645B1 (ko) 2007-04-23

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