JP2019512890A - 直接読み取りピクセルアライメント - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000001902 propagating effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000006096 absorbing agent Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 19
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 12
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
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- 238000005530 etching Methods 0.000 description 6
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000009396 hybridization Methods 0.000 description 3
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- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (18)
- 電気光学センサチップアセンブリ(SCA)であって、
集積回路(IC)と、
基板、バッファ層、ピクセル層、及び該ピクセル層内に配置されたピクセルのアレイを有する検出器と、
前記ICと前記ピクセル層との間に介在する相互接続層であり、前記ピクセルから前記ICまでそれぞれ延在可能な複数の冷間圧接された相互接続ポストを有する相互接続層と
を有し、
前記検出器は、前記基板及び前記バッファ層の中に形成された直視窓から前記ピクセルのうちの1つ以上まで伝播する可視波長光によって透過可能である、
電気光学SCA。 - 側方ハンドリング溝を更に有する請求項1に記載の電気光学SCA。
- 前記バッファ層は半導体材料を有する、請求項1に記載の電気光学SCA。
- 前記ピクセル層は半導体材料を有する、請求項1に記載の電気光学SCA。
- 各ピクセルが、
n型アブソーバと、
p型キャップと、
前記p型キャップと、対応する相互接続ポストと、の間に介在するコンタクトメタルと、
前記コンタクトメタルを取り囲むパッシベーション材料と
を有する、請求項1に記載の電気光学SCA。 - 電気光学SCAを形成する方法であって、
基板、バッファ層、ピクセル層、及び該ピクセル層内に配置されたピクセルのアレイを有する検出器を組み立て、
集積回路(IC)と前記ピクセル層との間に相互接続層を介在させ、
前記ICと前記検出器とを混成させ、それにより、前記ピクセルから前記ICまでそれぞれ延在可能な複数の相互接続ポストが冷間圧接され、
前記ピクセルのうちの1つ以上の位置で、前記基板及び前記バッファ層の中に直視窓を形成し、且つ
前記直視窓から前記ピクセルのうちの前記1つ以上まで、前記検出器を通して可視波長光を伝播させる、
ことを有する方法。 - 側方ハンドリング溝にて前記電気光学検出器をハンドリングする、ことを更に有する請求項6に記載の方法。
- 前記バッファ層は半導体材料を有する、請求項6に記載の方法。
- 前記ピクセル層は半導体材料を有する、請求項6に記載の方法。
- 各ピクセルが、
n型アブソーバと、
p型キャップと、
前記p型キャップと、対応する相互接続ポストと、の間に介在するコンタクトメタルと、
前記コンタクトメタルを取り囲むパッシベーション材料と
を有する、請求項6に記載の方法。 - 前記直視窓の前記形成は、ダイヤモンドポイント旋削(DPT)を有する、請求項6に記載の方法。
- 前記直視窓の前記形成は、化学エッチング又はドライエッチングプロセスを有する、請求項6に記載の方法。
- 前記直視窓の前記形成は、
前記基板の外面層の中でのダイヤモンドポイント旋削(DPT)と、
前記基板の内面層及び前記バッファ層の中での化学エッチングと
を有する、請求項6に記載の方法。 - 電気光学検出器を組み立てる方法であって、
ペデスタルに対する光学素子の位置を特徴付け、
電気光学検出器素子の直接読み取りピクセルアライメントを実行し、
前記ペデスタル上に前記電気光学検出器素子を配置し、且つ
前記特徴付けられた位置と前記直接読み取りピクセルアライメントとに基づいて、前記電気光学検出器素子を前記光学素子に対してアライメントする、
ことを有する方法。 - 前記ペデスタルは、
ベゼルと、
前記光学素子を画成するように形成され、且つ画像画成アパーチャを用いて前記ベゼル内に固定された、光学素子アセンブリと
を有する、請求項14に記載の方法。 - 前記ペデスタルは、フレックスケーブルを有するリジッドフレックスアセンブリを支持する、請求項15に記載の方法。
- 前記アライメントすることは、前記光学素子に対する前記電気光学SCAの平面アライメントを有する、請求項14に記載の方法。
- 前記光学素子はフィルタを有し、当該方法は更に、前記特徴付けられた位置と前記直接読み取りピクセルアライメントとに基づいて、前記電気光学検出器素子を前記フィルタに対してアライメントする、ことを有する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/094,505 US9704907B1 (en) | 2016-04-08 | 2016-04-08 | Direct read pixel alignment |
US15/094,505 | 2016-04-08 | ||
PCT/US2017/025008 WO2017176551A1 (en) | 2016-04-08 | 2017-03-30 | Direct read pixel alignment |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019512890A true JP2019512890A (ja) | 2019-05-16 |
JP6732039B2 JP6732039B2 (ja) | 2020-07-29 |
Family
ID=58639041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2018550841A Expired - Fee Related JP6732039B2 (ja) | 2016-04-08 | 2017-03-30 | 直接読み取りピクセルアライメント |
Country Status (7)
Country | Link |
---|---|
US (1) | US9704907B1 (ja) |
EP (1) | EP3440701A1 (ja) |
JP (1) | JP6732039B2 (ja) |
KR (1) | KR102153209B1 (ja) |
IL (1) | IL262172B (ja) |
TW (1) | TWI750161B (ja) |
WO (1) | WO2017176551A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114335030A (zh) * | 2018-04-08 | 2022-04-12 | 奥特逻科公司 | 光探测装置 |
CN109817769B (zh) * | 2019-01-15 | 2020-10-30 | 申广 | 一种新型led芯片封装制作方法 |
US11430753B2 (en) | 2020-07-08 | 2022-08-30 | Raytheon Company | Iterative formation of damascene interconnects |
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US9704907B1 (en) | 2017-07-11 |
WO2017176551A1 (en) | 2017-10-12 |
KR20180129900A (ko) | 2018-12-05 |
EP3440701A1 (en) | 2019-02-13 |
TWI750161B (zh) | 2021-12-21 |
KR102153209B1 (ko) | 2020-09-07 |
JP6732039B2 (ja) | 2020-07-29 |
TW201737503A (zh) | 2017-10-16 |
IL262172A (en) | 2018-11-29 |
IL262172B (en) | 2019-07-31 |
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