JP6732039B2 - 直接読み取りピクセルアライメント - Google Patents
直接読み取りピクセルアライメント Download PDFInfo
- Publication number
- JP6732039B2 JP6732039B2 JP2018550841A JP2018550841A JP6732039B2 JP 6732039 B2 JP6732039 B2 JP 6732039B2 JP 2018550841 A JP2018550841 A JP 2018550841A JP 2018550841 A JP2018550841 A JP 2018550841A JP 6732039 B2 JP6732039 B2 JP 6732039B2
- Authority
- JP
- Japan
- Prior art keywords
- electro
- pixel
- layer
- sca
- optic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 132
- 238000000034 method Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000006096 absorbing agent Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000003486 chemical etching Methods 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 230000001902 propagating effect Effects 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 15
- 238000002955 isolation Methods 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000009396 hybridization Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical group [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
Claims (18)
- 電気光学センサチップアセンブリ(SCA)であって、
集積回路(IC)と、
基板、バッファ層、ピクセル層、及び該ピクセル層内に配置されたピクセルのアレイを有する赤外線検出器と、
前記ICと前記ピクセル層との間に介在する相互接続層であり、前記ピクセルから前記ICまでそれぞれ延在可能な複数の冷間圧接された相互接続ポストを有する相互接続層と
を有し、
前記赤外線検出器は、前記ピクセルのうちの1つ以上の位置で前記基板及び前記バッファ層の中に形成された直視窓を有し、前記ピクセルのうちの前記1つ以上は、可視波長光が前記直視窓を通って前記ピクセルのうちの前記1つ以上まで伝播することによって視認可能である、
電気光学SCA。 - 側方ハンドリング溝を更に有する請求項1に記載の電気光学SCA。
- 前記バッファ層は半導体材料を有する、請求項1に記載の電気光学SCA。
- 前記ピクセル層は半導体材料を有する、請求項1に記載の電気光学SCA。
- 各ピクセルが、
n型アブソーバと、
p型キャップと、
前記p型キャップと、対応する相互接続ポストと、の間に介在するコンタクトメタルと、
前記コンタクトメタルを取り囲むパッシベーション材料と
を有する、請求項1に記載の電気光学SCA。 - 電気光学センサチップアセンブリ(SCA)を形成する方法であって、
基板、バッファ層、ピクセル層、及び該ピクセル層内に配置されたピクセルのアレイを有する赤外線検出器を組み立て、
集積回路(IC)と前記ピクセル層との間に相互接続層を介在させ、
前記ICと前記赤外線検出器とを混成させ、それにより、前記ピクセルから前記ICまでそれぞれ延在可能な複数の相互接続ポストが冷間圧接され、
前記ピクセルのうちの1つ以上の位置で、前記基板及び前記バッファ層の中に直視窓を形成し、且つ
前記直視窓を通して前記ピクセルのうちの前記1つ以上まで可視波長光を伝播させる、
ことを有する方法。 - 側方ハンドリング溝にて前記電気光学SCAをハンドリングする、ことを更に有する請求項6に記載の方法。
- 前記バッファ層は半導体材料を有する、請求項6に記載の方法。
- 前記ピクセル層は半導体材料を有する、請求項6に記載の方法。
- 各ピクセルが、
n型アブソーバと、
p型キャップと、
前記p型キャップと、対応する相互接続ポストと、の間に介在するコンタクトメタルと、
前記コンタクトメタルを取り囲むパッシベーション材料と
を有する、請求項6に記載の方法。 - 前記直視窓の前記形成は、ダイヤモンドポイント旋削(DPT)を有する、請求項6に記載の方法。
- 前記直視窓の前記形成は、化学エッチング又はドライエッチングプロセスを有する、請求項6に記載の方法。
- 前記直視窓の前記形成は、
前記基板の外面層の中でのダイヤモンドポイント旋削(DPT)と、
前記基板の内面層及び前記バッファ層の中での化学エッチングと
を有する、請求項6に記載の方法。 - 請求項1に記載の電気光学センサチップアセンブリ(SCA)を含む電気光学検出器を組み立てる方法であって、
ペデスタルに対する光学素子の位置を特徴付け、
前記電気光学SCAの直接読み取りピクセルアライメントを実行し、該直接読み取りピクセルアライメントは、前記直視窓を通して前記ピクセルのうちの前記1つ以上まで可視波長光を伝播させることを含み、
前記ペデスタル上に前記電気光学SCAを配置し、且つ
前記特徴付けられた位置と前記直接読み取りピクセルアライメントとに基づいて、前記電気光学SCAを前記光学素子に対してアライメントする、
ことを有する方法。 - 前記ペデスタルは、
ベゼルと、
前記光学素子を画成するように形成され、且つ画像画成アパーチャを用いて前記ベゼル内に固定された、光学素子アセンブリと
を有する、請求項14に記載の方法。 - 前記ペデスタルは、フレックスケーブルを有するリジッドフレックスアセンブリを支持する、請求項15に記載の方法。
- 前記アライメントすることは、前記光学素子に対する前記電気光学SCAの平面アライメントを有する、請求項14に記載の方法。
- 前記光学素子はフィルタを有し、当該方法は更に、前記特徴付けられた位置と前記直接読み取りピクセルアライメントとに基づいて、前記電気光学SCAを前記フィルタに対してアライメントする、ことを有する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/094,505 US9704907B1 (en) | 2016-04-08 | 2016-04-08 | Direct read pixel alignment |
US15/094,505 | 2016-04-08 | ||
PCT/US2017/025008 WO2017176551A1 (en) | 2016-04-08 | 2017-03-30 | Direct read pixel alignment |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019512890A JP2019512890A (ja) | 2019-05-16 |
JP6732039B2 true JP6732039B2 (ja) | 2020-07-29 |
Family
ID=58639041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018550841A Expired - Fee Related JP6732039B2 (ja) | 2016-04-08 | 2017-03-30 | 直接読み取りピクセルアライメント |
Country Status (7)
Country | Link |
---|---|
US (1) | US9704907B1 (ja) |
EP (1) | EP3440701A1 (ja) |
JP (1) | JP6732039B2 (ja) |
KR (1) | KR102153209B1 (ja) |
IL (1) | IL262172B (ja) |
TW (1) | TWI750161B (ja) |
WO (1) | WO2017176551A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI780007B (zh) * | 2018-04-08 | 2022-10-01 | 美商光程研創股份有限公司 | 光偵測裝置及其系統 |
CN109817769B (zh) * | 2019-01-15 | 2020-10-30 | 申广 | 一种新型led芯片封装制作方法 |
US11430753B2 (en) | 2020-07-08 | 2022-08-30 | Raytheon Company | Iterative formation of damascene interconnects |
CN111916469B (zh) * | 2020-08-31 | 2022-06-28 | 山西国惠光电科技有限公司 | 一种新型双色InGaAs红外焦平面探测器的制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168634A (ja) * | 1988-12-21 | 1990-06-28 | Nec Corp | 半導体装置の製造方法 |
US5186379A (en) * | 1991-06-17 | 1993-02-16 | Hughes Aircraft Company | Indium alloy cold weld bumps |
US5751049A (en) * | 1993-08-16 | 1998-05-12 | Texas Instruments Incorporated | Two-color infrared detector |
US5959339A (en) * | 1996-03-19 | 1999-09-28 | Raytheon Company | Simultaneous two-wavelength p-n-p-n Infrared detector |
US5812629A (en) | 1997-04-30 | 1998-09-22 | Clauser; John F. | Ultrahigh resolution interferometric x-ray imaging |
JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
US6927383B2 (en) * | 2002-07-26 | 2005-08-09 | Raytheon Company | Radiation hardened visible P-I-N detector |
TWI289365B (en) * | 2005-09-29 | 2007-11-01 | Visera Technologies Co Ltd | Wafer scale image module |
US7709872B2 (en) * | 2006-09-13 | 2010-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for fabricating image sensor devices |
CN101522817A (zh) | 2006-10-16 | 2009-09-02 | 西尔弗布鲁克研究股份有限公司 | 适合用于胶版墨的酞菁染料 |
JP5147226B2 (ja) * | 2006-12-15 | 2013-02-20 | 株式会社日立製作所 | 固体撮像素子、光検出器及びこれを用いた認証装置 |
JP5637751B2 (ja) * | 2009-08-28 | 2014-12-10 | 富士フイルム株式会社 | 固体撮像装置,固体撮像装置の製造方法 |
JP2011071481A (ja) * | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡 |
CN102668082B (zh) * | 2009-10-20 | 2015-09-30 | Flir系统贸易比利时有限公司 | 用于光学元件的聚焦补偿及其应用 |
US8610070B2 (en) | 2010-04-28 | 2013-12-17 | L-3 Communications Corporation | Pixel-level optical elements for uncooled infrared detector devices |
US8471204B2 (en) | 2010-12-23 | 2013-06-25 | Flir Systems, Inc. | Monolithic electro-optical polymer infrared focal plane array |
JP2012234993A (ja) * | 2011-05-02 | 2012-11-29 | Yamaha Corp | 半導体パッケージ及び搬送システム |
US9105548B2 (en) * | 2011-06-22 | 2015-08-11 | California Institute Of Technology | Sparsely-bonded CMOS hybrid imager |
US8441087B2 (en) * | 2011-07-22 | 2013-05-14 | Raytheon Company | Direct readout focal plane array |
EP4192026A1 (en) | 2012-04-19 | 2023-06-07 | Raytheon Company | Repartitioned digital pixel |
JP6003283B2 (ja) * | 2012-06-21 | 2016-10-05 | 富士通株式会社 | 赤外線検知素子の製造方法、および赤外線検知素子 |
KR102380064B1 (ko) * | 2014-02-18 | 2022-03-28 | 에이엠에스 센서스 싱가포르 피티이. 리미티드. | 초점 길이 조정 및/또는 기울기의 축소를 위한 고객 맞춤화 가능한 스페이서를 포함하는 광학 모듈, 및 광학 모듈의 제조 |
-
2016
- 2016-04-08 US US15/094,505 patent/US9704907B1/en active Active
-
2017
- 2017-03-30 WO PCT/US2017/025008 patent/WO2017176551A1/en active Application Filing
- 2017-03-30 KR KR1020187031794A patent/KR102153209B1/ko active IP Right Grant
- 2017-03-30 JP JP2018550841A patent/JP6732039B2/ja not_active Expired - Fee Related
- 2017-03-30 EP EP17719955.1A patent/EP3440701A1/en not_active Withdrawn
- 2017-04-05 TW TW106111393A patent/TWI750161B/zh not_active IP Right Cessation
-
2018
- 2018-10-07 IL IL262172A patent/IL262172B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102153209B1 (ko) | 2020-09-07 |
JP2019512890A (ja) | 2019-05-16 |
WO2017176551A1 (en) | 2017-10-12 |
KR20180129900A (ko) | 2018-12-05 |
IL262172B (en) | 2019-07-31 |
EP3440701A1 (en) | 2019-02-13 |
TW201737503A (zh) | 2017-10-16 |
TWI750161B (zh) | 2021-12-21 |
IL262172A (en) | 2018-11-29 |
US9704907B1 (en) | 2017-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10455213B2 (en) | Device having a 2D image sensor and depth sensor | |
US8691614B2 (en) | Direct readout focal plane array | |
JP6732039B2 (ja) | 直接読み取りピクセルアライメント | |
JP5185205B2 (ja) | 半導体光検出素子 | |
EP2756523B1 (en) | Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same | |
JP5829224B2 (ja) | Mosイメージセンサ | |
US20180130833A1 (en) | Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus | |
US20130043372A1 (en) | Multi-Band Position Sensitive Imaging Arrays | |
US11728367B2 (en) | Optical device having a detector and an optical element mounted on an epoxy fence | |
TW202002266A (zh) | 背照式感測器及製造感測器之方法 | |
US11372119B2 (en) | Rapid prototyping of single-photon-sensitive silicon avalanche photodiodes | |
TWI814961B (zh) | 背照明感測器及製造一感測器之方法 | |
US10692915B2 (en) | Imaging device and method of manufacturing imaging device | |
JP2008172005A (ja) | 固体撮像装置、電子モジュール及び電子機器 | |
US20230369364A1 (en) | Optical blocking structures for black level correction pixels in an image sensor | |
JP3441405B2 (ja) | 半導体赤外線検出素子 | |
WO2022254797A1 (ja) | 光検出素子、光検出素子の製造方法、及び電子機器 | |
Murray et al. | Active pixel x-ray sensor technology development for smart-x focal plane | |
Vu et al. | Wafer-scale scientific CCDs at Fairchild Imaging | |
Lesser et al. | Development of a Back-illuminated 4096 x 4096 15-Micron Pixel Scientific CCD | |
Lesser et al. | DEVELOPMENT OF A BACK-ILLUMINATED 4096× 4096 15-MICRON PIXEL SCIENTIFIC CCD |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180927 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200115 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200609 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200707 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6732039 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |