KR100709645B1 - 방사 경화된 가시성 ｐ-ｉ-ｎ 검출기 - Google Patents

방사 경화된 가시성 ｐ-ｉ-ｎ 검출기 Download PDF

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KR100709645B1
KR100709645B1 KR1020047021168A KR20047021168A KR100709645B1 KR 100709645 B1 KR100709645 B1 KR 100709645B1 KR 1020047021168 A KR1020047021168 A KR 1020047021168A KR 20047021168 A KR20047021168 A KR 20047021168A KR 100709645 B1 KR100709645 B1 KR 100709645B1
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forming
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Korean (ko)
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KR20050029129A (ko
Inventor
앤드류 지. 토스
레 티. 팜
제리 알. 크라이프
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레이티언 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

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KR1020047021168A 2002-07-26 2003-07-10 방사 경화된 가시성 ｐ-ｉ-ｎ 검출기 Expired - Lifetime KR100709645B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/207,422 US6927383B2 (en) 2002-07-26 2002-07-26 Radiation hardened visible P-I-N detector
US10/207,422 2002-07-26

Publications (2)

Publication Number Publication Date
KR20050029129A KR20050029129A (ko) 2005-03-24
KR100709645B1 true KR100709645B1 (ko) 2007-04-23

Family

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KR1020047021168A Expired - Lifetime KR100709645B1 (ko) 2002-07-26 2003-07-10 방사 경화된 가시성 ｐ-ｉ-ｎ 검출기

Country Status (5)

Country Link
US (1) US6927383B2 (https=)
JP (1) JP2005534186A (https=)
KR (1) KR100709645B1 (https=)
TW (1) TWI229190B (https=)
WO (1) WO2004012241A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718963B2 (en) * 2007-08-20 2010-05-18 Honeywell International Inc. Passive solid state ionizing radiation sensor
US9704907B1 (en) * 2016-04-08 2017-07-11 Raytheon Company Direct read pixel alignment
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
CN113544547B (zh) * 2019-03-29 2023-11-10 深圳帧观德芯科技有限公司 辐射检测装置及其制备方法
WO2020198929A1 (en) * 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Apparatuses for detecting radiation and their methods of making

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006829A (ko) * 1991-09-20 1993-04-22 경상현 고속 광통신용 pin 포토다이오드의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
JPS59501033A (ja) * 1982-06-07 1984-06-07 ヒユ−ズ・エアクラフト・カンパニ− 阻止された不純物帯を有する背面照射型の赤外線検出器
JPH04107968A (ja) * 1990-08-28 1992-04-09 Fujitsu Ltd 半導体装置およびその製造方法
JP3137431B2 (ja) * 1991-06-13 2001-02-19 セイコーインスツルメンツ株式会社 半導体集積回路装置
JPH05259427A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 赤外線検知装置およびその製造方法
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
US5600130A (en) * 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5670817A (en) 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
US5798558A (en) 1995-06-27 1998-08-25 Mission Research Corporation Monolithic x-ray image detector and method of manufacturing
US6541755B1 (en) 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP3778406B2 (ja) * 1999-05-07 2006-05-24 富士通株式会社 フォトセンサおよびイメージセンサ
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
DE10392637B4 (de) * 2002-05-10 2014-09-04 Hamamatsu Photonics K.K. Hintergrundbeleuchtetes Photodioden-Array und Verfahren zum Herstellen desselben

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006829A (ko) * 1991-09-20 1993-04-22 경상현 고속 광통신용 pin 포토다이오드의 제조방법

Also Published As

Publication number Publication date
US6927383B2 (en) 2005-08-09
WO2004012241A2 (en) 2004-02-05
WO2004012241A3 (en) 2004-04-22
TWI229190B (en) 2005-03-11
TW200415359A (en) 2004-08-16
JP2005534186A (ja) 2005-11-10
KR20050029129A (ko) 2005-03-24
US20040016872A1 (en) 2004-01-29

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