JP2005533907A5 - - Google Patents

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Publication number
JP2005533907A5
JP2005533907A5 JP2004524696A JP2004524696A JP2005533907A5 JP 2005533907 A5 JP2005533907 A5 JP 2005533907A5 JP 2004524696 A JP2004524696 A JP 2004524696A JP 2004524696 A JP2004524696 A JP 2004524696A JP 2005533907 A5 JP2005533907 A5 JP 2005533907A5
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JP
Japan
Prior art keywords
group
fluorine
containing copolymer
alkyl group
repeating unit
Prior art date
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Application number
JP2004524696A
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English (en)
Japanese (ja)
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JP2005533907A (ja
JP4303202B2 (ja
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Priority claimed from PCT/US2003/022912 external-priority patent/WO2004011509A1/en
Publication of JP2005533907A publication Critical patent/JP2005533907A/ja
Publication of JP2005533907A5 publication Critical patent/JP2005533907A5/ja
Application granted granted Critical
Publication of JP4303202B2 publication Critical patent/JP4303202B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004524696A 2002-07-26 2003-07-23 弗素化ポリマー、フォトレジストおよびミクロ平版印刷のための方法 Expired - Fee Related JP4303202B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39889902P 2002-07-26 2002-07-26
PCT/US2003/022912 WO2004011509A1 (en) 2002-07-26 2003-07-23 Fluorinated polymers, photoresists and processes for microlithography

Publications (3)

Publication Number Publication Date
JP2005533907A JP2005533907A (ja) 2005-11-10
JP2005533907A5 true JP2005533907A5 (enExample) 2006-08-24
JP4303202B2 JP4303202B2 (ja) 2009-07-29

Family

ID=31188514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524696A Expired - Fee Related JP4303202B2 (ja) 2002-07-26 2003-07-23 弗素化ポリマー、フォトレジストおよびミクロ平版印刷のための方法

Country Status (9)

Country Link
US (1) US20050203262A1 (enExample)
EP (1) EP1551887A4 (enExample)
JP (1) JP4303202B2 (enExample)
KR (1) KR20050030639A (enExample)
CN (1) CN1678646A (enExample)
AU (1) AU2003254112A1 (enExample)
CA (1) CA2493926A1 (enExample)
TW (1) TW200403262A (enExample)
WO (1) WO2004011509A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US7846637B2 (en) * 2004-04-27 2010-12-07 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film
US7507522B2 (en) * 2004-05-20 2009-03-24 E. I. Dupont De Nemours And Company Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers
US7960087B2 (en) * 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
WO2008129964A1 (ja) 2007-04-13 2008-10-30 Fujifilm Corporation パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
JP4558064B2 (ja) 2007-05-15 2010-10-06 富士フイルム株式会社 パターン形成方法
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
KR101452229B1 (ko) 2007-06-12 2014-10-22 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
KR101768929B1 (ko) * 2010-09-30 2017-08-17 디아이씨 가부시끼가이샤 함불소 중합성 수지, 그것을 사용한 활성 에너지선 경화형 조성물 및 그 경화물
CN102070755B (zh) * 2010-11-09 2013-01-09 浙江理工大学 一种三嵌段氟化聚合物及制备方法
JP6148112B2 (ja) * 2013-04-02 2017-06-14 リソテック ジャパン株式会社 光透過度測定方法
DE102014118490B4 (de) 2014-12-12 2022-03-24 tooz technologies GmbH Anzeigevorrichtungen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3444148A (en) * 1964-10-05 1969-05-13 Du Pont Copolymers of selected polyfluoroper-haloketone adducts with other selected ethylenic compounds
KR100263906B1 (ko) * 1998-06-02 2000-09-01 윤종용 백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR20020012206A (ko) * 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
US20030022097A1 (en) * 2000-05-05 2003-01-30 Arch Specialty Chemicals, Inc Tertiary-butyl acrylate polymers and their use in photoresist compositions
EP1278786B1 (en) * 2000-05-05 2006-01-04 E.I. Du Pont De Nemours And Company Copolymers for photoresists and processes therefor
US6764809B2 (en) * 2000-10-12 2004-07-20 North Carolina State University CO2-processes photoresists, polymers, and photoactive compounds for microlithography
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition

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