AU2003254112A1 - Fluorinated polymers, photoresists and processes for microlithography - Google Patents

Fluorinated polymers, photoresists and processes for microlithography

Info

Publication number
AU2003254112A1
AU2003254112A1 AU2003254112A AU2003254112A AU2003254112A1 AU 2003254112 A1 AU2003254112 A1 AU 2003254112A1 AU 2003254112 A AU2003254112 A AU 2003254112A AU 2003254112 A AU2003254112 A AU 2003254112A AU 2003254112 A1 AU2003254112 A1 AU 2003254112A1
Authority
AU
Australia
Prior art keywords
microlithography
photoresists
processes
fluorinated polymers
fluorinated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003254112A
Other languages
English (en)
Inventor
Koutaro Endo
Andrew Edward Feiring
Toshiyuki Ogata
Frank Leonard Schadt Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2003254112A1 publication Critical patent/AU2003254112A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F114/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F114/18—Monomers containing fluorine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AU2003254112A 2002-07-26 2003-07-23 Fluorinated polymers, photoresists and processes for microlithography Abandoned AU2003254112A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39889902P 2002-07-26 2002-07-26
US60/398,899 2002-07-26
PCT/US2003/022912 WO2004011509A1 (en) 2002-07-26 2003-07-23 Fluorinated polymers, photoresists and processes for microlithography

Publications (1)

Publication Number Publication Date
AU2003254112A1 true AU2003254112A1 (en) 2004-02-16

Family

ID=31188514

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003254112A Abandoned AU2003254112A1 (en) 2002-07-26 2003-07-23 Fluorinated polymers, photoresists and processes for microlithography

Country Status (9)

Country Link
US (1) US20050203262A1 (enExample)
EP (1) EP1551887A4 (enExample)
JP (1) JP4303202B2 (enExample)
KR (1) KR20050030639A (enExample)
CN (1) CN1678646A (enExample)
AU (1) AU2003254112A1 (enExample)
CA (1) CA2493926A1 (enExample)
TW (1) TW200403262A (enExample)
WO (1) WO2004011509A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
KR100960838B1 (ko) * 2004-04-27 2010-06-07 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
US7507522B2 (en) * 2004-05-20 2009-03-24 E. I. Dupont De Nemours And Company Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers
US7960087B2 (en) * 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP2138898B1 (en) 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
KR100989567B1 (ko) 2007-05-15 2010-10-25 후지필름 가부시키가이샤 패턴형성방법
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
KR101705670B1 (ko) 2007-06-12 2017-02-10 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
KR101768929B1 (ko) * 2010-09-30 2017-08-17 디아이씨 가부시끼가이샤 함불소 중합성 수지, 그것을 사용한 활성 에너지선 경화형 조성물 및 그 경화물
CN102070755B (zh) * 2010-11-09 2013-01-09 浙江理工大学 一种三嵌段氟化聚合物及制备方法
JP6148112B2 (ja) * 2013-04-02 2017-06-14 リソテック ジャパン株式会社 光透過度測定方法
DE102014118490B4 (de) 2014-12-12 2022-03-24 tooz technologies GmbH Anzeigevorrichtungen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3444148A (en) * 1964-10-05 1969-05-13 Du Pont Copolymers of selected polyfluoroper-haloketone adducts with other selected ethylenic compounds
KR100263906B1 (ko) * 1998-06-02 2000-09-01 윤종용 백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
EP1183571B1 (en) * 1999-05-04 2010-06-02 E.I. Du Pont De Nemours And Company Fluorinated photoresists and processes for microlithography
US6872503B2 (en) * 2000-05-05 2005-03-29 E. I. Du Pont De Nemours And Company Copolymers for photoresists and processes therefor
US20030022097A1 (en) * 2000-05-05 2003-01-30 Arch Specialty Chemicals, Inc Tertiary-butyl acrylate polymers and their use in photoresist compositions
WO2002031596A1 (en) * 2000-10-12 2002-04-18 University Of North Carolina At Chapel Hill Co2-processes photoresists, polymers, and photoactive compounds for microlithography
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition

Also Published As

Publication number Publication date
TW200403262A (en) 2004-03-01
WO2004011509A1 (en) 2004-02-05
CA2493926A1 (en) 2004-02-05
US20050203262A1 (en) 2005-09-15
CN1678646A (zh) 2005-10-05
KR20050030639A (ko) 2005-03-30
JP4303202B2 (ja) 2009-07-29
EP1551887A4 (en) 2008-07-02
JP2005533907A (ja) 2005-11-10
EP1551887A1 (en) 2005-07-13

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase