JP2005532657A5 - - Google Patents

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Publication number
JP2005532657A5
JP2005532657A5 JP2004521557A JP2004521557A JP2005532657A5 JP 2005532657 A5 JP2005532657 A5 JP 2005532657A5 JP 2004521557 A JP2004521557 A JP 2004521557A JP 2004521557 A JP2004521557 A JP 2004521557A JP 2005532657 A5 JP2005532657 A5 JP 2005532657A5
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JP
Japan
Prior art keywords
burst length
burst
access
memory device
command
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004521557A
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English (en)
Japanese (ja)
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JP4507186B2 (ja
JP2005532657A (ja
Filing date
Publication date
Priority claimed from US10/193,828 external-priority patent/US6957308B1/en
Application filed filed Critical
Publication of JP2005532657A publication Critical patent/JP2005532657A/ja
Publication of JP2005532657A5 publication Critical patent/JP2005532657A5/ja
Application granted granted Critical
Publication of JP4507186B2 publication Critical patent/JP4507186B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004521557A 2002-07-11 2003-07-09 モードレジスタにおけるバースト長設定の変更を行わずに、異なるバースト長のアクセスをサポートするｄｒａｍ Expired - Lifetime JP4507186B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/193,828 US6957308B1 (en) 2002-07-11 2002-07-11 DRAM supporting different burst-length accesses without changing the burst length setting in the mode register
PCT/US2003/021286 WO2004008329A1 (en) 2002-07-11 2003-07-09 Dram supporting different burst-length accesses without changing the burst length setting in the mode register

Publications (3)

Publication Number Publication Date
JP2005532657A JP2005532657A (ja) 2005-10-27
JP2005532657A5 true JP2005532657A5 (enExample) 2006-08-31
JP4507186B2 JP4507186B2 (ja) 2010-07-21

Family

ID=30114615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004521557A Expired - Lifetime JP4507186B2 (ja) 2002-07-11 2003-07-09 モードレジスタにおけるバースト長設定の変更を行わずに、異なるバースト長のアクセスをサポートするｄｒａｍ

Country Status (9)

Country Link
US (1) US6957308B1 (enExample)
EP (1) EP1522021B1 (enExample)
JP (1) JP4507186B2 (enExample)
KR (1) KR101005114B1 (enExample)
CN (1) CN1333353C (enExample)
AU (1) AU2003258997A1 (enExample)
DE (1) DE60313323T2 (enExample)
TW (1) TWI307464B (enExample)
WO (1) WO2004008329A1 (enExample)

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US7543088B2 (en) 2004-03-11 2009-06-02 Sonics, Inc. Various methods and apparatuses for width and burst conversion
US7475168B2 (en) * 2004-03-11 2009-01-06 Sonics, Inc. Various methods and apparatus for width and burst conversion
US8122187B2 (en) * 2004-07-02 2012-02-21 Qualcomm Incorporated Refreshing dynamic volatile memory
US8032676B2 (en) 2004-11-02 2011-10-04 Sonics, Inc. Methods and apparatuses to manage bandwidth mismatches between a sending device and a receiving device
US7640392B2 (en) * 2005-06-23 2009-12-29 Qualcomm Incorporated Non-DRAM indicator and method of accessing data not stored in DRAM array
US7620783B2 (en) * 2005-02-14 2009-11-17 Qualcomm Incorporated Method and apparatus for obtaining memory status information cross-reference to related applications
US20070206586A1 (en) * 2006-03-02 2007-09-06 Matti Floman Method, mobile device, system and software for flexible burst length control
KR100799132B1 (ko) 2006-06-29 2008-01-29 주식회사 하이닉스반도체 초기값변경이 가능한 모드레지스터셋회로.
US9262326B2 (en) * 2006-08-14 2016-02-16 Qualcomm Incorporated Method and apparatus to enable the cooperative signaling of a shared bus interrupt in a multi-rank memory subsystem
US20080059748A1 (en) * 2006-08-31 2008-03-06 Nokia Corporation Method, mobile device, system and software for a write method with burst stop and data masks
US20080301391A1 (en) * 2007-06-01 2008-12-04 Jong-Hoon Oh Method and apparatus for modifying a burst length for semiconductor memory
KR101260313B1 (ko) * 2007-06-12 2013-05-03 삼성전자주식회사 전자장치 및 그 데이터 송수신방법과, 슬레이브 장치 및복수의 장치 간의 통신방법
US7688628B2 (en) * 2007-06-30 2010-03-30 Intel Corporation Device selection circuit and method
TWI358735B (en) * 2008-01-03 2012-02-21 Nanya Technology Corp Memory access control method
US20100325333A1 (en) * 2008-10-14 2010-12-23 Texas Instruments Incorporated Method Allowing Processor with Fewer Pins to Use SDRAM
US8266471B2 (en) * 2010-02-09 2012-09-11 Mosys, Inc. Memory device including a memory block having a fixed latency data output
US8856579B2 (en) * 2010-03-15 2014-10-07 International Business Machines Corporation Memory interface having extended strobe burst for read timing calibration
US9319880B2 (en) * 2010-09-15 2016-04-19 Intel Corporation Reformatting data to decrease bandwidth between a video encoder and a buffer
KR101873526B1 (ko) * 2011-06-09 2018-07-02 삼성전자주식회사 에러 정정회로를 구비한 온 칩 데이터 스크러빙 장치 및 방법
KR101964261B1 (ko) 2012-05-17 2019-04-01 삼성전자주식회사 자기 메모리 장치
CN105474318A (zh) 2013-07-26 2016-04-06 慧与发展有限责任合伙企业 响应于第二读取请求的第一数据
US10534540B2 (en) * 2016-06-06 2020-01-14 Micron Technology, Inc. Memory protocol
US10198195B1 (en) * 2017-08-04 2019-02-05 Micron Technology, Inc. Wear leveling
US10846253B2 (en) 2017-12-21 2020-11-24 Advanced Micro Devices, Inc. Dynamic page state aware scheduling of read/write burst transactions
KR102671077B1 (ko) 2018-11-15 2024-06-03 에스케이하이닉스 주식회사 반도체장치
US11270416B2 (en) 2019-12-27 2022-03-08 Nxp Usa, Inc. System and method of using optimized descriptor coding for geometric correction to reduce memory transfer bandwidth overhead
US11687281B2 (en) * 2021-03-31 2023-06-27 Advanced Micro Devices, Inc. DRAM command streak efficiency management
US12307095B2 (en) * 2022-03-14 2025-05-20 Mediatek Inc. Electronic system and method for controlling burst length to access memory device of electronic system
US12475969B2 (en) 2022-09-14 2025-11-18 Rambus Inc. Dynamic random access memory (DRAM) device with variable burst lengths

Family Cites Families (12)

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US5754825A (en) 1995-05-19 1998-05-19 Compaq Computer Corporation Lower address line prediction and substitution
US7681005B1 (en) * 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
JPH10208468A (ja) * 1997-01-28 1998-08-07 Hitachi Ltd 半導体記憶装置並びに同期型半導体記憶装置
US6226724B1 (en) * 1997-09-03 2001-05-01 Motorola, Inc. Memory controller and method for generating commands to a memory
JPH11134243A (ja) * 1997-10-31 1999-05-21 Brother Ind Ltd 記憶装置の制御装置及びデータ処理システムにおける記憶装置の制御方法
JP3948141B2 (ja) * 1998-09-24 2007-07-25 富士通株式会社 半導体記憶装置及びその制御方法
US6606352B2 (en) 1999-01-15 2003-08-12 Broadcom Corporation Method and apparatus for converting between byte lengths and burdened burst lengths in a high speed modem
US6393500B1 (en) 1999-08-12 2002-05-21 Mips Technologies, Inc. Burst-configurable data bus
KR20020014563A (ko) * 2000-08-18 2002-02-25 윤종용 반도체 메모리 장치
US6549991B1 (en) * 2000-08-31 2003-04-15 Silicon Integrated Systems Corp. Pipelined SDRAM memory controller to optimize bus utilization
JP4025002B2 (ja) 2000-09-12 2007-12-19 株式会社東芝 半導体記憶装置
US6895474B2 (en) * 2002-04-29 2005-05-17 Micron Technology, Inc. Synchronous DRAM with selectable internal prefetch size

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