JP2005527973A - 集積された格子状のコンデンサ構造物を備えた半導体部品 - Google Patents
集積された格子状のコンデンサ構造物を備えた半導体部品 Download PDFInfo
- Publication number
- JP2005527973A JP2005527973A JP2003586936A JP2003586936A JP2005527973A JP 2005527973 A JP2005527973 A JP 2005527973A JP 2003586936 A JP2003586936 A JP 2003586936A JP 2003586936 A JP2003586936 A JP 2003586936A JP 2005527973 A JP2005527973 A JP 2005527973A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor component
- region
- lattice region
- intersection
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 230000003071 parasitic effect Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (9)
- 半導体基板と、この半導体基板上に形成された絶縁層と、この絶縁層内に形成されたコンデンサ構造物(K)とを備えた半導体部品であって、
前記のコンデンサ構造物(K)は、密着性の金属格子領域(G1a)を有する第1の構造体(T1a)を備えており、この金属格子領域が、主に、前記の半導体基板の表面に平行な平板(M1)内に広がっているとともに、第1の接続配線に導電接続されており、
前記の第1の構造体(T1a)には、導電領域(P1a;KN)が設けられており、この導電領域(P1a;KN)が、前記の金属格子領域(G1a)の空隙部分に、この部分にある平板(M1)の端部から離れて配置されるとともに、第2の接続配線に導電接続されていることを特徴とする半導体部品。 - 前記の導電領域は、ヴィア接続部の間の金属板(P1a〜P1c)または結節部(KN)であることを特徴とする請求項1に記載の半導体部品。
- 前記コンデンサ構造物(K)は、第1の構造体(T1a)と平行で、かつ間隔をあけて構成された、密着性の金属格子領域(G1b)を有する第2の構造体(T1b)を有しており、
第1の構造体(T1a)と第2の構造体(T1b)とは、導電接続されていることを特徴とする請求項1または2に記載の半導体部品。 - 第2の構造体(T1b)は、第1の構造体(T1a)と同じ構成であるとともに、
第2の構造体(T1b)の格子領域(G1b)内の交差点(KP)に対して、第1の構造体(T1a)の導電領域(P1a)が対向配置するように、かつ
第2の構造体(T1b)の導電領域(P1b)に対して、第1の構造体(T1a)の格子領域(G1a)内の交差点(KP)が対向配置するように、
両構造体(T1a、T1b)が、互いにずれて配置されていることを特徴とする請求項3に記載の半導体部品。 - 第1の構造体(T1a)の格子領域(G1a)内の交差点(KP)は、当該第1の構造体(T1a)に対して対向配置した第2の構造体(T1b)の導電領域(P1b)と、少なくとも1つのヴィア接続部(V)によって導電接続されており、
第1の構造体(T1a)の導電領域(P1a)は、当該第1の構造体(T1a)に対して対向配置した第2の構造体(T1b)の格子領域(G1b)内の交差点(KP)と、少なくとも1つのヴィア接続部(V)によって導電接続されていることを特徴とする請求項3または4に記載の半導体部品。 - 第2の構造体(T1b)の格子領域(G1b)は、第1の構造体(T1a)に対してずれて配置されており、
第1の構造体(T1a)の導電領域(P1a)は、第2の構造体(T1b)の格子領域(G1b)内の交差点(KP)に対向配置されていることを特徴とする請求項3に記載の半導体部品。 - 第1の構造体(T1a)の導電領域(P1a)と、第2の構造体(T1b)の格子領域(G1b)内の交差点(KP)とは、それぞれ1つまたは複数のヴィア接続部(V)によって導電接続されていることを特徴とする請求項6に記載の半導体部品。
- 金属板(MP)の形状を有する他の構造体が、1つのヴィア接続部(V)または複数のヴィア接続部(V)それぞれによって、両構造体(T1a、T1b)の格子領域(G1a、G1b)内の交差点(KP)または導電領域(P1a、P1b)と、導電接続されていることを特徴とする請求項3乃至7のいずれか1項に記載の半導体部品。
- 格子領域(G1a〜G1c)は、少なくとも2つの矩形または円形の空隙部分を有していることを特徴とする請求項1乃至8のいずれか1項に記載の半導体部品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10217565A DE10217565A1 (de) | 2002-04-19 | 2002-04-19 | Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur |
PCT/DE2003/001171 WO2003090279A1 (de) | 2002-04-19 | 2003-04-09 | Halbleiterbauelement mit integrierter gitterförmiger kapazitätsstruktur |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005527973A true JP2005527973A (ja) | 2005-09-15 |
Family
ID=29224604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003586936A Pending JP2005527973A (ja) | 2002-04-19 | 2003-04-09 | 集積された格子状のコンデンサ構造物を備えた半導体部品 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050161725A1 (ja) |
EP (1) | EP1497862B1 (ja) |
JP (1) | JP2005527973A (ja) |
CN (1) | CN1647274A (ja) |
DE (2) | DE10217565A1 (ja) |
WO (1) | WO2003090279A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220716A (ja) * | 2006-02-14 | 2007-08-30 | Fujitsu Ltd | 容量セル、半導体装置、および半導体装置の配置方法 |
KR100851075B1 (ko) * | 2007-04-30 | 2008-08-12 | 삼성전기주식회사 | 전자기 밴드갭 구조물 및 인쇄회로기판 |
JP2010141314A (ja) * | 2008-12-09 | 2010-06-24 | Magnachip Semiconductor Ltd | キャパシタ構造体 |
JP2012509595A (ja) * | 2008-11-21 | 2012-04-19 | ザイリンクス インコーポレイテッド | グリッドプレートを有する集積キャパシタ |
JP2012509597A (ja) * | 2008-11-21 | 2012-04-19 | ザイリンクス インコーポレイテッド | 交差部のアレイを有する集積キャパシタ |
KR101478594B1 (ko) * | 2007-02-24 | 2015-01-02 | 프라운호퍼-게젤샤프트 츄어 푀르더룽 데어 안게반텐 포르슝에.파우. | 용량성 소자의 전하량을 결정하는 디바이스, 화소셀 및 아날로그 진폭변조 신호의 포락선의 최고 위치를 결정하는 방법 |
JP2020120017A (ja) * | 2019-01-25 | 2020-08-06 | 國家中山科學研究院 | ミリメートル波周波数バンドのためのスタッガード型レイヤ構造を備えたキャパシタアレイ |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10217566A1 (de) * | 2002-04-19 | 2003-11-13 | Infineon Technologies Ag | Halbleiterbauelement mit integrierter, eine Mehrzahl an Metallisierungsebenen aufweisende Kapazitätsstruktur |
JP2005340518A (ja) * | 2004-05-27 | 2005-12-08 | Sanyo Electric Co Ltd | 容量素子 |
DE102004047660B4 (de) * | 2004-09-30 | 2008-01-24 | Infineon Technologies Ag | Bauteil mit integrierter Kapazitätsstruktur |
JP2006179620A (ja) * | 2004-12-21 | 2006-07-06 | Sharp Corp | 半導体集積回路 |
JP2007081132A (ja) * | 2005-09-14 | 2007-03-29 | Sharp Corp | 半導体集積回路 |
JP2007207878A (ja) * | 2006-01-31 | 2007-08-16 | Nec Electronics Corp | 半導体装置 |
JP2007263097A (ja) * | 2006-03-30 | 2007-10-11 | Toyota Industries Corp | 容量可変型圧縮機における流量検出装置 |
US7956438B2 (en) * | 2008-11-21 | 2011-06-07 | Xilinx, Inc. | Integrated capacitor with interlinked lateral fins |
US7944732B2 (en) * | 2008-11-21 | 2011-05-17 | Xilinx, Inc. | Integrated capacitor with alternating layered segments |
US7994609B2 (en) * | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Shielding for integrated capacitors |
US7994610B1 (en) | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Integrated capacitor with tartan cross section |
US8653844B2 (en) | 2011-03-07 | 2014-02-18 | Xilinx, Inc. | Calibrating device performance within an integrated circuit |
US8941974B2 (en) | 2011-09-09 | 2015-01-27 | Xilinx, Inc. | Interdigitated capacitor having digits of varying width |
US9177909B2 (en) * | 2013-08-14 | 2015-11-03 | United Microelectronics Corp. | Semiconductor capacitor |
US9270247B2 (en) | 2013-11-27 | 2016-02-23 | Xilinx, Inc. | High quality factor inductive and capacitive circuit structure |
US9524964B2 (en) | 2014-08-14 | 2016-12-20 | Xilinx, Inc. | Capacitor structure in an integrated circuit |
CN108305860B (zh) * | 2018-03-20 | 2022-09-16 | 珠海市杰理科技股份有限公司 | 兼容交流耦合电容的射频电路引脚 |
CN113363234B (zh) * | 2020-03-05 | 2023-06-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2960276B2 (ja) * | 1992-07-30 | 1999-10-06 | 株式会社東芝 | 多層配線基板、この基板を用いた半導体装置及び多層配線基板の製造方法 |
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
JP3246274B2 (ja) * | 1995-06-22 | 2002-01-15 | 松下電器産業株式会社 | 半導体装置 |
US6037621A (en) * | 1998-07-29 | 2000-03-14 | Lucent Technologies Inc. | On-chip capacitor structure |
DE19850915C1 (de) * | 1998-11-05 | 2000-03-23 | Bosch Gmbh Robert | Monolithisch integrierte Kapazität |
US6208500B1 (en) * | 1998-11-25 | 2001-03-27 | Microchip Technology Incorporated | High quality factor capacitor |
JP3489728B2 (ja) * | 1999-10-18 | 2004-01-26 | 株式会社村田製作所 | 積層コンデンサ、配線基板および高周波回路 |
US6327134B1 (en) * | 1999-10-18 | 2001-12-04 | Murata Manufacturing Co., Ltd. | Multi-layer capacitor, wiring board, and high-frequency circuit |
JP4446525B2 (ja) * | 1999-10-27 | 2010-04-07 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3489729B2 (ja) * | 1999-11-19 | 2004-01-26 | 株式会社村田製作所 | 積層コンデンサ、配線基板、デカップリング回路および高周波回路 |
US6297524B1 (en) * | 2000-04-04 | 2001-10-02 | Philips Electronics North America Corporation | Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS |
US6410954B1 (en) * | 2000-04-10 | 2002-06-25 | Koninklijke Philips Electronics N.V. | Multilayered capacitor structure with alternately connected concentric lines for deep sub-micron CMOS |
US6411492B1 (en) * | 2000-05-24 | 2002-06-25 | Conexant Systems, Inc. | Structure and method for fabrication of an improved capacitor |
US6570210B1 (en) * | 2000-06-19 | 2003-05-27 | Koninklijke Philips Electronics N.V. | Multilayer pillar array capacitor structure for deep sub-micron CMOS |
US6970362B1 (en) * | 2000-07-31 | 2005-11-29 | Intel Corporation | Electronic assemblies and systems comprising interposer with embedded capacitors |
US6410955B1 (en) * | 2001-04-19 | 2002-06-25 | Micron Technology, Inc. | Comb-shaped capacitor for use in integrated circuits |
TW548779B (en) * | 2002-08-09 | 2003-08-21 | Acer Labs Inc | Integrated capacitor and method of making same |
US6963122B1 (en) * | 2003-02-21 | 2005-11-08 | Barcelona Design, Inc. | Capacitor structure and automated design flow for incorporating same |
EP1538639B1 (en) * | 2003-12-05 | 2007-02-28 | NGK Spark Plug Co., Ltd. | Capacitor and method for manufacturing the same |
US6974994B1 (en) * | 2004-06-22 | 2005-12-13 | Advanic Technologies Inc. | Capacitor with a geometrical layout |
JP4343085B2 (ja) * | 2004-10-26 | 2009-10-14 | Necエレクトロニクス株式会社 | 半導体装置 |
JP4322839B2 (ja) * | 2005-04-11 | 2009-09-02 | エルピーダメモリ株式会社 | 半導体装置 |
-
2002
- 2002-04-19 DE DE10217565A patent/DE10217565A1/de not_active Ceased
-
2003
- 2003-04-09 CN CNA038086379A patent/CN1647274A/zh active Pending
- 2003-04-09 WO PCT/DE2003/001171 patent/WO2003090279A1/de active IP Right Grant
- 2003-04-09 EP EP03746805A patent/EP1497862B1/de not_active Expired - Lifetime
- 2003-04-09 JP JP2003586936A patent/JP2005527973A/ja active Pending
- 2003-04-09 US US10/511,855 patent/US20050161725A1/en not_active Abandoned
- 2003-04-09 DE DE50306040T patent/DE50306040D1/de not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220716A (ja) * | 2006-02-14 | 2007-08-30 | Fujitsu Ltd | 容量セル、半導体装置、および半導体装置の配置方法 |
KR101478594B1 (ko) * | 2007-02-24 | 2015-01-02 | 프라운호퍼-게젤샤프트 츄어 푀르더룽 데어 안게반텐 포르슝에.파우. | 용량성 소자의 전하량을 결정하는 디바이스, 화소셀 및 아날로그 진폭변조 신호의 포락선의 최고 위치를 결정하는 방법 |
KR100851075B1 (ko) * | 2007-04-30 | 2008-08-12 | 삼성전기주식회사 | 전자기 밴드갭 구조물 및 인쇄회로기판 |
JP2012509595A (ja) * | 2008-11-21 | 2012-04-19 | ザイリンクス インコーポレイテッド | グリッドプレートを有する集積キャパシタ |
JP2012509597A (ja) * | 2008-11-21 | 2012-04-19 | ザイリンクス インコーポレイテッド | 交差部のアレイを有する集積キャパシタ |
JP2010141314A (ja) * | 2008-12-09 | 2010-06-24 | Magnachip Semiconductor Ltd | キャパシタ構造体 |
JP2020120017A (ja) * | 2019-01-25 | 2020-08-06 | 國家中山科學研究院 | ミリメートル波周波数バンドのためのスタッガード型レイヤ構造を備えたキャパシタアレイ |
Also Published As
Publication number | Publication date |
---|---|
EP1497862A1 (de) | 2005-01-19 |
CN1647274A (zh) | 2005-07-27 |
DE10217565A1 (de) | 2003-11-13 |
WO2003090279A8 (de) | 2004-04-29 |
US20050161725A1 (en) | 2005-07-28 |
DE50306040D1 (de) | 2007-02-01 |
EP1497862B1 (de) | 2006-12-20 |
WO2003090279A1 (de) | 2003-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2005527973A (ja) | 集積された格子状のコンデンサ構造物を備えた半導体部品 | |
US7768054B2 (en) | Semiconductor component with integrated capacitance structure and method for fabrication thereof | |
US7348624B2 (en) | Semiconductor device including a capacitor element | |
US7161228B1 (en) | Three-dimensional integrated capacitance structure | |
US8207569B2 (en) | Intertwined finger capacitors | |
US6465832B1 (en) | Semiconductor device | |
TWI388051B (zh) | 電容以及金屬-氧化物-金屬電容 | |
US6885543B1 (en) | Fringing capacitor structure | |
JP2004502315A (ja) | セラミック多層キャパシタアレイ | |
JPH11168182A (ja) | 積層フリンジ集積回路コンデンサー | |
US6974744B1 (en) | Fringing capacitor structure | |
CA2395900A1 (en) | Matched vertical capacitors | |
US7061746B2 (en) | Semiconductor component with integrated capacitance structure having a plurality of metallization planes | |
US7327011B2 (en) | Multi-surfaced plate-to-plate capacitor and method of forming same | |
KR20010014709A (ko) | 적층 커패시터 장치 | |
JPH01120858A (ja) | 集積回路装置 | |
JP5592074B2 (ja) | 半導体装置 | |
KR100902503B1 (ko) | 다층 수직 구조를 갖는 고용량 커패시터 | |
JP5774544B2 (ja) | コンデンサ構造 | |
JP4615962B2 (ja) | 半導体装置 | |
JP7441866B2 (ja) | コンデンサ構造 | |
JP2003124329A (ja) | 容量素子 | |
JP2024011372A (ja) | 半導体集積回路装置 | |
JP2010093288A (ja) | 半導体装置 | |
JPH0864766A (ja) | コンデンサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060801 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20061101 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20061101 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20061110 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070306 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070731 |