JP4322839B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4322839B2 JP4322839B2 JP2005113515A JP2005113515A JP4322839B2 JP 4322839 B2 JP4322839 B2 JP 4322839B2 JP 2005113515 A JP2005113515 A JP 2005113515A JP 2005113515 A JP2005113515 A JP 2005113515A JP 4322839 B2 JP4322839 B2 JP 4322839B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- diffusion layer
- layer
- compensation capacitor
- stacking direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
Description
3 誘電体層
4 ゲート電極
5 絶縁層
6 金属層
7,9 コンタクト
13 縦列
14 横列
15,16 中心線
18 開口部
34 補償容量部
Claims (4)
- 回路素子に電源を供給する内部電源と、
前記内部電源に電源を供給する補償容量部とを有し、
前記補償容量部は、
拡散層、誘電体層、およびゲート電極がこの順に積層されてなり、積層方向投影面において、該ゲート電極と、該誘電体層と、該拡散層とが少なくとも一部で重複するように形成された蓄電部と、
前記蓄電部の積層方向上方に形成された、前記拡散層の電位を規定する金属層と、
前記拡散層と前記金属層との間を積層方向に延びて、該拡散層と該金属層とを電気的に接続するコンタクトとを有し、
前記ゲート電極は積層面と平行方向に網の目状に広がっており、
前記コンタクトは前記ゲート電極の網の目の開口部を通って延びており、
前記拡散層は、少なくとも一部がマトリックス状に配列された矩形開口部を有し、
前記ゲート電極は、互いに直角の関係にある複数の縦列と複数の横列とを有し、各縦列の中心線、および各横列の中心線が前記矩形開口部の中心を通るように形成されている、半導体装置。 - 前記金属層は、積層面と平行方向に網の目状に広がっている、請求項1に記載の半導体装置。
- 前記拡散層は開口率が50%である、請求項1または2に記載の半導体装置。
- 回路素子に電源を供給する内部電源と、
前記内部電源に電源を供給する補償容量部とを有し、
前記補償容量部は、拡散層、誘電体層、およびゲート電極がこの順に積層されてなり、積層方向投影面において、該ゲート電極と、該誘電体層と、該拡散層とが少なくとも一部で重複するように形成された蓄電部と、前記蓄電部の積層方向上方に形成された、前記拡散層の電位を規定する金属層と、前記拡散層と前記金属層との間を積層方向に延びて、該拡散層と該金属層とを電気的に接続するコンタクトとを有し、前記ゲート電極は積層面と平行方向に複数の縦列と複数の横列とを有して網の目状に広がっており、前記コンタクトは前記ゲート電極の網の目の開口部を通って延びており、前記拡散層は少なくとも一部がマトリックス状に配列された複数の矩形開口部を有し、前記複数の矩形開口部は前記ゲート電極の複数の縦列及び横列の複数の交差領域の下部に其々配置される、半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005113515A JP4322839B2 (ja) | 2005-04-11 | 2005-04-11 | 半導体装置 |
US11/401,293 US7557398B2 (en) | 2005-04-11 | 2006-04-11 | Semiconductor device having a compensation capacitor in a mesh structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005113515A JP4322839B2 (ja) | 2005-04-11 | 2005-04-11 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006294867A JP2006294867A (ja) | 2006-10-26 |
JP4322839B2 true JP4322839B2 (ja) | 2009-09-02 |
Family
ID=37082382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005113515A Expired - Fee Related JP4322839B2 (ja) | 2005-04-11 | 2005-04-11 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7557398B2 (ja) |
JP (1) | JP4322839B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10217565A1 (de) * | 2002-04-19 | 2003-11-13 | Infineon Technologies Ag | Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur |
TWI271754B (en) * | 2006-02-16 | 2007-01-21 | Jmicron Technology Corp | Three-dimensional capacitor structure |
CN101546763B (zh) * | 2008-03-24 | 2010-12-22 | 扬智科技股份有限公司 | 内嵌存储器装置及制程方法 |
JP2010021349A (ja) * | 2008-07-10 | 2010-01-28 | Nec Electronics Corp | 半導体記憶装置 |
JP5653001B2 (ja) * | 2009-03-16 | 2015-01-14 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及び半導体装置の補償容量の配置方法 |
US8767404B2 (en) | 2011-07-01 | 2014-07-01 | Altera Corporation | Decoupling capacitor circuitry |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04130667A (ja) | 1990-09-20 | 1992-05-01 | Nec Ic Microcomput Syst Ltd | 半導体素子 |
JPH1032311A (ja) | 1996-07-12 | 1998-02-03 | Sony Corp | 容量素子の形成方法 |
JPH11297841A (ja) | 1998-04-14 | 1999-10-29 | Iwate Toshiba Electronics Kk | 半導体集積回路およびその製造方法 |
JP3725708B2 (ja) | 1998-09-29 | 2005-12-14 | 株式会社東芝 | 半導体装置 |
JP2001274255A (ja) | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 半導体集積回路の自動配置配線方法 |
JP4756746B2 (ja) | 2000-04-19 | 2011-08-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2004071837A (ja) | 2002-08-06 | 2004-03-04 | Matsushita Electric Ind Co Ltd | 半導体装置、半導体装置用パターンの生成方法、半導体装置の製造方法、および半導体装置用パターン生成装置 |
JP2004119857A (ja) | 2002-09-27 | 2004-04-15 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
GB2398169B (en) * | 2003-02-06 | 2006-02-22 | Zarlink Semiconductor Ltd | An electrical component structure |
KR100493059B1 (ko) * | 2003-04-18 | 2005-06-02 | 삼성전자주식회사 | 게이트 캐패시턴스를 감소시킬 수 있는 트랜지스터 |
JP3892429B2 (ja) | 2003-09-18 | 2007-03-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法およびマスクパターンの生成方法 |
US7098523B2 (en) * | 2003-12-11 | 2006-08-29 | International Business Machines Corporation | Controlled leakage CMOS decoupling capacitor for application specific integrated circuit libraries |
US7309906B1 (en) * | 2004-04-01 | 2007-12-18 | Altera Corporation | Apparatus and methods for providing highly effective and area efficient decoupling capacitance in programmable logic devices |
-
2005
- 2005-04-11 JP JP2005113515A patent/JP4322839B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-11 US US11/401,293 patent/US7557398B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060226462A1 (en) | 2006-10-12 |
US7557398B2 (en) | 2009-07-07 |
JP2006294867A (ja) | 2006-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6939763B2 (en) | DRAM cell arrangement with vertical MOS transistors, and method for its fabrication | |
US7560760B2 (en) | Ferroelectric memory devices having expanded plate lines | |
US11037989B2 (en) | Method to form memory cells separated by a void-free dielectric structure | |
US10103101B2 (en) | Semiconductor device and method of manufacturing the same | |
JP5590802B2 (ja) | 基本セルおよび半導体装置 | |
US9245893B1 (en) | Semiconductor constructions having grooves dividing active regions | |
JP2012089566A (ja) | 半導体装置及びその製造方法、並びにデータ処理システム | |
JP4322839B2 (ja) | 半導体装置 | |
US8497174B2 (en) | Method of fabricating semiconductor device including vertical channel transistor | |
US20080087928A1 (en) | Semiconductor device | |
US9224741B2 (en) | Semiconductor devices including vertical transistors, electronic systems including the same and methods of manufacturing the same | |
US20160099248A1 (en) | Semiconductor memory device with improved active area/word line layout | |
JP4609722B2 (ja) | 強誘電体記憶装置および電子機器 | |
US20090073736A1 (en) | Semiconductor device having storage nodes on active regions and method of fabricating the same | |
US6255697B1 (en) | Integrated circuit devices including distributed and isolated dummy conductive regions | |
US7923843B2 (en) | Semiconductor device with a contact plug connected to multiple interconnects formed within | |
US20090258488A1 (en) | Methods of fabricating semiconductor devices including storage node landing pads separated from bit line contact plugs | |
JP2021044399A (ja) | 半導体装置およびその製造方法 | |
US6198128B1 (en) | Method of manufacturing a semiconductor device, and semiconductor device | |
US7064366B2 (en) | Ferroelectric memory devices having an expanded plate electrode | |
JP2011082223A (ja) | 半導体集積回路装置 | |
US8470667B2 (en) | Semiconductor device including reservoir capacitor and method of manufacturing the same | |
US20220122980A1 (en) | Semiconductor device having transistor device of three-dimensional structure | |
US8129766B2 (en) | Semiconductor memory device comprising shifted contact plugs | |
CN101459175B (zh) | 半导体器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090310 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090512 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090603 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120612 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120612 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130612 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |